JPS61183550U - - Google Patents

Info

Publication number
JPS61183550U
JPS61183550U JP4991686U JP4991686U JPS61183550U JP S61183550 U JPS61183550 U JP S61183550U JP 4991686 U JP4991686 U JP 4991686U JP 4991686 U JP4991686 U JP 4991686U JP S61183550 U JPS61183550 U JP S61183550U
Authority
JP
Japan
Prior art keywords
conductivity type
region
type region
semiconductor device
gate electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4991686U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP4991686U priority Critical patent/JPS61183550U/ja
Publication of JPS61183550U publication Critical patent/JPS61183550U/ja
Pending legal-status Critical Current

Links

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1,2,3図は従来のダイオード及び抵抗に
よるゲート絶縁膜保護装置を有する半導体装置を
示す図。第4,5図はそれらの等価回路を示す図
。第6,7図は本考案による半導体装置を示す図
。第8図はその等価回路を示す図。 3,9,23,28,31,39,41……N
基板、1,7,14,32,43……P領域
、8,15,29,38……N領域、2,5,
10,13,19,30,35,40,47……
配線。
1, 2, and 3 are diagrams showing a semiconductor device having a conventional gate insulating film protection device using a diode and a resistor. 4 and 5 are diagrams showing their equivalent circuits. 6 and 7 are diagrams showing a semiconductor device according to the present invention. FIG. 8 is a diagram showing the equivalent circuit. 3, 9, 23, 28, 31, 39, 41...N
-Substrate , 1, 7, 14, 32, 43...P + area, 8, 15, 29, 38...N + area, 2, 5,
10, 13, 19, 30, 35, 40, 47...
wiring.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 第1導電型の基板、クランプダイオードと前記
クランプダイオードを形成する第2導電型領域の
抵抗とからなるゲート絶縁膜保護装置、及び第1
導電型の電源ストツパー領域を有する半導体装置
において、前記ゲート絶縁膜保護装置の前記第2
導電型領域と前記第1導電型の電源ストツパー領
域との間隔は、前記第2導電型領域のゲート電極
と接続されている側が、前記第2導電型領域の前
記ゲート電極と接続されていない側より狭いこと
を特徴とする半導体装置。
a gate insulating film protection device including a substrate of a first conductivity type, a clamp diode, and a resistor of a second conductivity type region forming the clamp diode;
In the semiconductor device having a conductive type power stopper region, the second
The distance between the conductivity type region and the first conductivity type power stopper region is such that the side of the second conductivity type region connected to the gate electrode is such that the side of the second conductivity type region is not connected to the gate electrode. A semiconductor device characterized by being narrower.
JP4991686U 1986-04-03 1986-04-03 Pending JPS61183550U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4991686U JPS61183550U (en) 1986-04-03 1986-04-03

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4991686U JPS61183550U (en) 1986-04-03 1986-04-03

Publications (1)

Publication Number Publication Date
JPS61183550U true JPS61183550U (en) 1986-11-15

Family

ID=30567546

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4991686U Pending JPS61183550U (en) 1986-04-03 1986-04-03

Country Status (1)

Country Link
JP (1) JPS61183550U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63285963A (en) * 1987-05-02 1988-11-22 テレフンケン・エレクトロニク・ゲゼルシヤフト・ミツト・ベシユレンクテル・ハフツング Integrated circuit device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63285963A (en) * 1987-05-02 1988-11-22 テレフンケン・エレクトロニク・ゲゼルシヤフト・ミツト・ベシユレンクテル・ハフツング Integrated circuit device

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