JPS61183550U - - Google Patents
Info
- Publication number
- JPS61183550U JPS61183550U JP4991686U JP4991686U JPS61183550U JP S61183550 U JPS61183550 U JP S61183550U JP 4991686 U JP4991686 U JP 4991686U JP 4991686 U JP4991686 U JP 4991686U JP S61183550 U JPS61183550 U JP S61183550U
- Authority
- JP
- Japan
- Prior art keywords
- conductivity type
- region
- type region
- semiconductor device
- gate electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 4
Description
第1,2,3図は従来のダイオード及び抵抗に
よるゲート絶縁膜保護装置を有する半導体装置を
示す図。第4,5図はそれらの等価回路を示す図
。第6,7図は本考案による半導体装置を示す図
。第8図はその等価回路を示す図。
3,9,23,28,31,39,41……N
−基板、1,7,14,32,43……P+領域
、8,15,29,38……N+領域、2,5,
10,13,19,30,35,40,47……
配線。
1, 2, and 3 are diagrams showing a semiconductor device having a conventional gate insulating film protection device using a diode and a resistor. 4 and 5 are diagrams showing their equivalent circuits. 6 and 7 are diagrams showing a semiconductor device according to the present invention. FIG. 8 is a diagram showing the equivalent circuit. 3, 9, 23, 28, 31, 39, 41...N
-Substrate , 1, 7, 14, 32, 43...P + area, 8, 15, 29, 38...N + area, 2, 5,
10, 13, 19, 30, 35, 40, 47...
wiring.
Claims (1)
クランプダイオードを形成する第2導電型領域の
抵抗とからなるゲート絶縁膜保護装置、及び第1
導電型の電源ストツパー領域を有する半導体装置
において、前記ゲート絶縁膜保護装置の前記第2
導電型領域と前記第1導電型の電源ストツパー領
域との間隔は、前記第2導電型領域のゲート電極
と接続されている側が、前記第2導電型領域の前
記ゲート電極と接続されていない側より狭いこと
を特徴とする半導体装置。 a gate insulating film protection device including a substrate of a first conductivity type, a clamp diode, and a resistor of a second conductivity type region forming the clamp diode;
In the semiconductor device having a conductive type power stopper region, the second
The distance between the conductivity type region and the first conductivity type power stopper region is such that the side of the second conductivity type region connected to the gate electrode is such that the side of the second conductivity type region is not connected to the gate electrode. A semiconductor device characterized by being narrower.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4991686U JPS61183550U (en) | 1986-04-03 | 1986-04-03 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4991686U JPS61183550U (en) | 1986-04-03 | 1986-04-03 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS61183550U true JPS61183550U (en) | 1986-11-15 |
Family
ID=30567546
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4991686U Pending JPS61183550U (en) | 1986-04-03 | 1986-04-03 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS61183550U (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63285963A (en) * | 1987-05-02 | 1988-11-22 | テレフンケン・エレクトロニク・ゲゼルシヤフト・ミツト・ベシユレンクテル・ハフツング | Integrated circuit device |
-
1986
- 1986-04-03 JP JP4991686U patent/JPS61183550U/ja active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63285963A (en) * | 1987-05-02 | 1988-11-22 | テレフンケン・エレクトロニク・ゲゼルシヤフト・ミツト・ベシユレンクテル・ハフツング | Integrated circuit device |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS61183550U (en) | ||
JPH0328517Y2 (en) | ||
EP0409370A3 (en) | Bipolar transistor | |
JPS60942U (en) | semiconductor equipment | |
JPS62104592U (en) | ||
JPS6320457U (en) | ||
JPS61162065U (en) | ||
JPS645450U (en) | ||
JPS64348U (en) | ||
JPS63177056U (en) | ||
JPS61123549U (en) | ||
JPS62178547U (en) | ||
JPS63127152U (en) | ||
JPS6041048U (en) | semiconductor equipment | |
JPH01104052U (en) | ||
JPS61106047U (en) | ||
JPS5929054U (en) | semiconductor equipment | |
JPS6252934U (en) | ||
JPS62135450U (en) | ||
JPS6165761U (en) | ||
JPS58114054U (en) | Optical semiconductor device | |
JPS62135449U (en) | ||
JPS58195458U (en) | semiconductor equipment | |
JPS62188823U (en) | ||
JPH0211341U (en) |