JPS6033460U - Electrostatic induction semiconductor device - Google Patents
Electrostatic induction semiconductor deviceInfo
- Publication number
- JPS6033460U JPS6033460U JP12507983U JP12507983U JPS6033460U JP S6033460 U JPS6033460 U JP S6033460U JP 12507983 U JP12507983 U JP 12507983U JP 12507983 U JP12507983 U JP 12507983U JP S6033460 U JPS6033460 U JP S6033460U
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- electrostatic induction
- induction semiconductor
- regions
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Thyristors (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第１図、第２図は従来例を示す断面図、第３図は本考案
の実施例を示す断面図である。
１１・・・制御電極としてのＰ型高濃度層、１２・・・
第１主電極としてのＮ型高濃度層、１３・・・第２主電
極としてのＮ型高濃度層、１４・・・同Ｐ型高濃度層。1 and 2 are sectional views showing a conventional example, and FIG. 3 is a sectional view showing an embodiment of the present invention. 11... P-type high concentration layer as a control electrode, 12...
N-type high concentration layer as a first main electrode, 13... N-type high concentration layer as a second main electrode, 14... P-type high concentration layer.
Claims (1)
一方の主電極を、互いに異なる導伝型の２つの高濃度層
領域で構成し、これら各領域を夫々トランジスタ動作時
のドレイン電極及びサイリスタ動作時のアノード電極と
したことを特徴とする静電誘導型半導体装置。Of the first and second main electrodes facing each other with the control electrode in between,
Electrostatic induction characterized in that one main electrode is composed of two high concentration layer regions of mutually different conductivity types, and each of these regions is used as a drain electrode during transistor operation and an anode electrode during thyristor operation, respectively. type semiconductor device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12507983U JPS6033460U (en) | 1983-08-11 | 1983-08-11 | Electrostatic induction semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12507983U JPS6033460U (en) | 1983-08-11 | 1983-08-11 | Electrostatic induction semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6033460U true JPS6033460U (en) | 1985-03-07 |
Family
ID=30284909
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12507983U Pending JPS6033460U (en) | 1983-08-11 | 1983-08-11 | Electrostatic induction semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6033460U (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52147985A (en) * | 1976-06-02 | 1977-12-08 | Mitsubishi Electric Corp | Electrostatic induction type thyristor |
| JPS5422179A (en) * | 1977-07-20 | 1979-02-19 | Hitachi Ltd | Semiconductor switching element |
-
1983
- 1983-08-11 JP JP12507983U patent/JPS6033460U/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52147985A (en) * | 1976-06-02 | 1977-12-08 | Mitsubishi Electric Corp | Electrostatic induction type thyristor |
| JPS5422179A (en) * | 1977-07-20 | 1979-02-19 | Hitachi Ltd | Semiconductor switching element |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5936262U (en) | semiconductor memory element | |
| JPS6033460U (en) | Electrostatic induction semiconductor device | |
| JPS5936264U (en) | Shock barrier semiconductor device | |
| JPS59119045U (en) | High power high frequency transistor | |
| JPS60166158U (en) | memory cell | |
| JPS58153463U (en) | transistor element | |
| JPS60153548U (en) | Lateral transistor | |
| JPS60137450U (en) | semiconductor resistance device | |
| JPS58195458U (en) | semiconductor equipment | |
| JPS6022849U (en) | Planar semiconductor device | |
| JPS6142863U (en) | MOS semiconductor device | |
| JPS606255U (en) | semiconductor equipment | |
| JPS6142860U (en) | Complementary MOS semiconductor device | |
| JPS58180646U (en) | field effect transistor | |
| JPS59164254U (en) | Insulated gate field effect transistor | |
| JPS60174258U (en) | Electric field controlled semiconductor device | |
| JPS60125749U (en) | semiconductor switching device | |
| JPS5974746U (en) | darlington transistor | |
| JPS59119047U (en) | High power high frequency transistor | |
| JPS60149152U (en) | embedded zener diode | |
| JPS59132654U (en) | constant voltage diode | |
| JPS6138956U (en) | thyristor | |
| JPS6134754U (en) | field effect transistor | |
| JPS59166452U (en) | Gate turn-off thyristor with amplification gate structure | |
| JPS5918404U (en) | Power semiconductor resistor |