JPS52147985A - Electrostatic induction type thyristor - Google Patents

Electrostatic induction type thyristor

Info

Publication number
JPS52147985A
JPS52147985A JP6488576A JP6488576A JPS52147985A JP S52147985 A JPS52147985 A JP S52147985A JP 6488576 A JP6488576 A JP 6488576A JP 6488576 A JP6488576 A JP 6488576A JP S52147985 A JPS52147985 A JP S52147985A
Authority
JP
Japan
Prior art keywords
type
electrostatic induction
induction type
type thyristor
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6488576A
Other languages
Japanese (ja)
Other versions
JPS5933988B2 (en
Inventor
Hiroshi Gamo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP6488576A priority Critical patent/JPS5933988B2/en
Publication of JPS52147985A publication Critical patent/JPS52147985A/en
Publication of JPS5933988B2 publication Critical patent/JPS5933988B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1066—Gate region of field-effect devices with PN junction gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To reduce the anti-voltage temperature dependence as well as reduce the voltage fall by distributing P-type layer selectively on N<+>-type layer for the electrostatic induction type thyristor in which P<+>- and N<+>-type layers are formed on both surfaces of N<->-type layer into which grid or mesh P-type buried layer is buried.
JP6488576A 1976-06-02 1976-06-02 Electrostatic induction thyristor Expired JPS5933988B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6488576A JPS5933988B2 (en) 1976-06-02 1976-06-02 Electrostatic induction thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6488576A JPS5933988B2 (en) 1976-06-02 1976-06-02 Electrostatic induction thyristor

Publications (2)

Publication Number Publication Date
JPS52147985A true JPS52147985A (en) 1977-12-08
JPS5933988B2 JPS5933988B2 (en) 1984-08-20

Family

ID=13270992

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6488576A Expired JPS5933988B2 (en) 1976-06-02 1976-06-02 Electrostatic induction thyristor

Country Status (1)

Country Link
JP (1) JPS5933988B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54105985A (en) * 1977-12-23 1979-08-20 Gen Electric Method of fabricating field controlled thyristor
JPS59207640A (en) * 1983-05-11 1984-11-24 Hitachi Ltd Semiconductor device
JPS6033460U (en) * 1983-08-11 1985-03-07 三洋電機株式会社 Electrostatic induction semiconductor device
JPS62247567A (en) * 1986-08-21 1987-10-28 Semiconductor Res Found Electrostatic induction thyristor

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6070169U (en) * 1983-10-20 1985-05-17 立川ブラインド工業株式会社 partition door

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54105985A (en) * 1977-12-23 1979-08-20 Gen Electric Method of fabricating field controlled thyristor
JPS59207640A (en) * 1983-05-11 1984-11-24 Hitachi Ltd Semiconductor device
JPH0522396B2 (en) * 1983-05-11 1993-03-29 Hitachi Ltd
JPS6033460U (en) * 1983-08-11 1985-03-07 三洋電機株式会社 Electrostatic induction semiconductor device
JPS62247567A (en) * 1986-08-21 1987-10-28 Semiconductor Res Found Electrostatic induction thyristor
JPH022307B2 (en) * 1986-08-21 1990-01-17 Handotai Kenkyu Shinkokai

Also Published As

Publication number Publication date
JPS5933988B2 (en) 1984-08-20

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