JPS55111168A - Turn-off thyristor - Google Patents

Turn-off thyristor

Info

Publication number
JPS55111168A
JPS55111168A JP1933379A JP1933379A JPS55111168A JP S55111168 A JPS55111168 A JP S55111168A JP 1933379 A JP1933379 A JP 1933379A JP 1933379 A JP1933379 A JP 1933379A JP S55111168 A JPS55111168 A JP S55111168A
Authority
JP
Japan
Prior art keywords
thyristor
layer
main thyristor
main
auxiliary
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1933379A
Other languages
Japanese (ja)
Other versions
JPS6148270B2 (en
Inventor
Tetsuo Sueoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Meidensha Electric Manufacturing Co Ltd
Original Assignee
Meidensha Electric Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Meidensha Electric Manufacturing Co Ltd filed Critical Meidensha Electric Manufacturing Co Ltd
Priority to JP1933379A priority Critical patent/JPS55111168A/en
Publication of JPS55111168A publication Critical patent/JPS55111168A/en
Publication of JPS6148270B2 publication Critical patent/JPS6148270B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7428—Thyristor-type devices, e.g. having four-zone regenerative action having an amplifying gate structure, e.g. cascade (Darlington) configuration

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Conversion In General (AREA)
  • Thyristor Switches And Gates (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To surely turn off a main thyristor in a short time, by making the width of the base of an auxiliary thyristor substantially larger than that of the base of the main thyristor. CONSTITUTION:A main thyristor 1 is composed of four layers P1, N1, P2, N2. An auxiliary thyristor 2 is composed of four layers P1, N1, P2, N3. Althought the layer N3 is produced by diffusion at the same concentration and same time as the layer N2, the diffusion depth of the layer N3 is made by DELTAxj (5-10mu) smaller than that of the layer N2 so that the voltage drop across the auxiliary thyristor 2 is greater by DELTAxj greater than that across the main thyristor 1. As a result, the time of shifting from the auxiliary thyristor 2 to the main thyristor 1 is shortened and the main thyristor is surely turned off in a short time.
JP1933379A 1979-02-21 1979-02-21 Turn-off thyristor Granted JPS55111168A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1933379A JPS55111168A (en) 1979-02-21 1979-02-21 Turn-off thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1933379A JPS55111168A (en) 1979-02-21 1979-02-21 Turn-off thyristor

Publications (2)

Publication Number Publication Date
JPS55111168A true JPS55111168A (en) 1980-08-27
JPS6148270B2 JPS6148270B2 (en) 1986-10-23

Family

ID=11996473

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1933379A Granted JPS55111168A (en) 1979-02-21 1979-02-21 Turn-off thyristor

Country Status (1)

Country Link
JP (1) JPS55111168A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57160161A (en) * 1981-03-27 1982-10-02 Meidensha Electric Mfg Co Ltd Gate turn-off thyristor
JPS57178368A (en) * 1981-04-27 1982-11-02 Hitachi Ltd Semiconductor device for breaking current
US5455434A (en) * 1992-05-11 1995-10-03 Siemens Aktiengesellschaft Thyristor with breakdown region
JPH0850518A (en) * 1994-04-13 1996-02-20 Sgs Thomson Microelectron Sa Overcurrent protective device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57160161A (en) * 1981-03-27 1982-10-02 Meidensha Electric Mfg Co Ltd Gate turn-off thyristor
JPH0136260B2 (en) * 1981-03-27 1989-07-31 Meidensha Electric Mfg Co Ltd
JPS57178368A (en) * 1981-04-27 1982-11-02 Hitachi Ltd Semiconductor device for breaking current
JPS6358377B2 (en) * 1981-04-27 1988-11-15 Hitachi Ltd
US5455434A (en) * 1992-05-11 1995-10-03 Siemens Aktiengesellschaft Thyristor with breakdown region
JPH0850518A (en) * 1994-04-13 1996-02-20 Sgs Thomson Microelectron Sa Overcurrent protective device

Also Published As

Publication number Publication date
JPS6148270B2 (en) 1986-10-23

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