JPS59119047U - High power high frequency transistor - Google Patents
High power high frequency transistorInfo
- Publication number
- JPS59119047U JPS59119047U JP1379483U JP1379483U JPS59119047U JP S59119047 U JPS59119047 U JP S59119047U JP 1379483 U JP1379483 U JP 1379483U JP 1379483 U JP1379483 U JP 1379483U JP S59119047 U JPS59119047 U JP S59119047U
- Authority
- JP
- Japan
- Prior art keywords
- region
- drain
- frequency transistor
- high concentration
- high frequency
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
−第１図は従来装置の断面図、第２図は本考案による一
実施例の断面図である。
１：ｐ型半導体基板、２：ｎ＋ソース領域、４ニドリフ
ト領域、６：ゲート電極、ＱＨｎ＋ドレイン領域、１０
：絶縁物層、１１：ｎ−堆積層。- Fig. 1 is a sectional view of a conventional device, and Fig. 2 is a sectional view of an embodiment of the present invention. 1: p-type semiconductor substrate, 2: n+ source region, 4 drift region, 6: gate electrode, QHn+ drain region, 10
: insulator layer, 11: n-deposition layer.
Claims (1)
レイン高濃度領域と同一導電型の不純物を低濃度に拡散
したドリフト領域を備えてなる電界効果トランジスタに
おいて、ドレイン高濃度領域を囲むドリフト領域の一部
を含んで、ドレイン領域下の基板との間に絶縁物を介在
してなる高出力高周波トランジスタ。In a field effect transistor comprising a drift region in which impurities of the same conductivity type as the drain high concentration region are diffused at a low concentration between the substrate under the gate electrode and the drain high concentration region, the drift region surrounding the drain high concentration region A high-power, high-frequency transistor with an insulator interposed between it and the substrate below the drain region.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1379483U JPS59119047U (en) | 1983-01-31 | 1983-01-31 | High power high frequency transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1379483U JPS59119047U (en) | 1983-01-31 | 1983-01-31 | High power high frequency transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59119047U true JPS59119047U (en) | 1984-08-11 |
Family
ID=30145171
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1379483U Pending JPS59119047U (en) | 1983-01-31 | 1983-01-31 | High power high frequency transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59119047U (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS49100979A (en) * | 1973-01-31 | 1974-09-24 | ||
| JPS55148464A (en) * | 1979-05-08 | 1980-11-19 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Mos semiconductor device and its manufacture |
-
1983
- 1983-01-31 JP JP1379483U patent/JPS59119047U/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS49100979A (en) * | 1973-01-31 | 1974-09-24 | ||
| JPS55148464A (en) * | 1979-05-08 | 1980-11-19 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Mos semiconductor device and its manufacture |
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