JPS5866654U - Glass packaging type semiconductor device - Google Patents
Glass packaging type semiconductor deviceInfo
- Publication number
- JPS5866654U JPS5866654U JP16215581U JP16215581U JPS5866654U JP S5866654 U JPS5866654 U JP S5866654U JP 16215581 U JP16215581 U JP 16215581U JP 16215581 U JP16215581 U JP 16215581U JP S5866654 U JPS5866654 U JP S5866654U
- Authority
- JP
- Japan
- Prior art keywords
- type semiconductor
- semiconductor device
- packaging type
- glass packaging
- moat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Bipolar Transistors (AREA)
- Thyristors (AREA)
- Formation Of Insulating Films (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第１図は従来のモートグラシベーション型半導体素子の
モート部分の断面図、第２図はジャンクション接合端部
の拡大図。第３図は本考案のモートグラシベーション型
半導体素子の製造工程途中における、モート部分の断面
図、第４図は本考案のモートグラシベーション型半導体
素子のモート部分の断面図、第５図は本考案におけるジ
ャンクション接合端部の拡大図である。
尚、図において、１・・・・・・Ｎ型半導体基板、２・
・・・・・Ｐ型絶縁拡散層、３・・・・・・Ｐエミッタ
拡散層、４・・・・・・Ｐベース拡散層、５・・・・・
・Ｎエミッタ拡散層、６・・・・・・Ｐベース接合、７
・・・・・・Ｐ千ミッタ接合、８・・・・・・Ｐベース
接合端、９・・・・・・Ｐエミッタ接合端、１０・・・
・・・メサ溝、１１・・・・・・ガラス、１２・・・・
・・電極、１３・・・・・・空乏層、１４．１５・・・
・・・空乏層−メサ溝 □接触端、１６・・・・・・
酸化膜、１７．１８・・・・・・本考案における製造工
程途中におけるメサ溝、１９・・・・・・メサ突出部、
である。FIG. 1 is a cross-sectional view of a moat portion of a conventional moat gracivation type semiconductor device, and FIG. 2 is an enlarged view of a junction junction end. FIG. 3 is a cross-sectional view of the moat portion of the moat gradation type semiconductor device of the present invention during the manufacturing process, FIG. 4 is a sectional view of the moat portion of the moat gradation type semiconductor device of the present invention, and FIG. It is an enlarged view of the junction joint end part in the invention. In the figure, 1...N-type semiconductor substrate, 2...
...P type insulating diffusion layer, 3...P emitter diffusion layer, 4...P base diffusion layer, 5...
・N emitter diffusion layer, 6...P base junction, 7
...P thousand-mitter junction, 8...P base junction end, 9...P emitter junction end, 10...
...Mesa groove, 11...Glass, 12...
... Electrode, 13... Depletion layer, 14.15...
...Depletion layer - mesa groove □Contact end, 16...
Oxide film, 17.18... Mesa groove in the middle of the manufacturing process in the present invention, 19... Mesa protrusion,
It is.
Claims (1)
溝に突起を設けた事を特徴とするガラスパッシベーショ
ン型半導体装置。A glass passivation type semiconductor device characterized in that a moat groove is provided with a protrusion in a moat gracivation type semiconductor element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16215581U JPS5866654U (en) | 1981-10-29 | 1981-10-29 | Glass packaging type semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16215581U JPS5866654U (en) | 1981-10-29 | 1981-10-29 | Glass packaging type semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5866654U true JPS5866654U (en) | 1983-05-06 |
Family
ID=29954488
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16215581U Pending JPS5866654U (en) | 1981-10-29 | 1981-10-29 | Glass packaging type semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5866654U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6327061U (en) * | 1986-08-05 | 1988-02-22 |
-
1981
- 1981-10-29 JP JP16215581U patent/JPS5866654U/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6327061U (en) * | 1986-08-05 | 1988-02-22 |
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