JPH0245633U - - Google Patents
Info
- Publication number
- JPH0245633U JPH0245633U JP12463388U JP12463388U JPH0245633U JP H0245633 U JPH0245633 U JP H0245633U JP 12463388 U JP12463388 U JP 12463388U JP 12463388 U JP12463388 U JP 12463388U JP H0245633 U JPH0245633 U JP H0245633U
- Authority
- JP
- Japan
- Prior art keywords
- base
- emitter
- insulating film
- film
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
Landscapes
- Bipolar Transistors (AREA)
Description
第１図は本考案の実施例を示す半導体装置の要
部拡大断面図である。第２図は従来の半導体装置
の要部拡大断面図である。
１……コレクタ層、２……ベース領域、３……
エミツタ領域、４……ベース−エミツタ接合、５
，１１……絶縁膜、６……ベースコンタクト窓、
７……エミツタコンタクト窓、１０……ベース電
極と同一電位膜（ポリシリコン膜）、１２……ベ
ース電極、１３……エミツタ電極。
FIG. 1 is an enlarged sectional view of a main part of a semiconductor device showing an embodiment of the present invention. FIG. 2 is an enlarged sectional view of a main part of a conventional semiconductor device. 1...Collector layer, 2...Base area, 3...
Emitter region, 4...Base-emitter junction, 5
, 11... Insulating film, 6... Base contact window,
7... Emitter contact window, 10... Same potential film as the base electrode (polysilicon film), 12... Base electrode, 13... Emitter electrode.
Claims (1)
領域及びベース−エミツタ接合と、半導体基板上
に形成された絶縁膜と、この絶縁膜上にベース−
エミツタ接合を越えてエミツタ領域上まで形成さ
れたベース電極と同一電位膜と、このベース電極
と同一電位膜上に形成された絶縁膜と、この絶縁
膜上に形成されたエミツタ電極とを有することを
特徴とする半導体装置。 A base region, an emitter region, and a base-emitter junction formed on a semiconductor substrate, an insulating film formed on the semiconductor substrate, and a base-emitter junction formed on the insulating film.
It has a film with the same potential as the base electrode formed beyond the emitter junction and above the emitter region, an insulating film formed on the same potential film as the base electrode, and an emitter electrode formed on the insulating film. A semiconductor device characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12463388U JPH0245633U (en) | 1988-09-22 | 1988-09-22 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12463388U JPH0245633U (en) | 1988-09-22 | 1988-09-22 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0245633U true JPH0245633U (en) | 1990-03-29 |
Family
ID=31374543
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12463388U Pending JPH0245633U (en) | 1988-09-22 | 1988-09-22 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0245633U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009059785A (en) * | 2007-08-30 | 2009-03-19 | Seiko Instruments Inc | Semiconductor device |
-
1988
- 1988-09-22 JP JP12463388U patent/JPH0245633U/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009059785A (en) * | 2007-08-30 | 2009-03-19 | Seiko Instruments Inc | Semiconductor device |