JPH0165153U - - Google Patents
Info
- Publication number
- JPH0165153U JPH0165153U JP1987160132U JP16013287U JPH0165153U JP H0165153 U JPH0165153 U JP H0165153U JP 1987160132 U JP1987160132 U JP 1987160132U JP 16013287 U JP16013287 U JP 16013287U JP H0165153 U JPH0165153 U JP H0165153U
- Authority
- JP
- Japan
- Prior art keywords
- region
- conductivity type
- semiconductor device
- type formed
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 1
Description
第１図は本考案の半導体装置の断面図、第２図
は第１図の平面図、第３図は本考案の等価回路図
、第４図Ａ，Ｂは従来の半導体装置の等価回路図
である。
１は半導体装置、２は半導体基板、３はコレク
タ領域、４は埋込み領域、５は分離領域、６はベ
ース領域、７はエミツタ領域、８はカソード領域
、９は拡散抵抗、１０はツエナーダイオード、１
１はコレクタ・コンタクト領域である。
Figure 1 is a cross-sectional view of the semiconductor device of the present invention, Figure 2 is a plan view of Figure 1, Figure 3 is an equivalent circuit diagram of the present invention, and Figures 4A and B are equivalent circuit diagrams of a conventional semiconductor device. It is. 1 is a semiconductor device, 2 is a semiconductor substrate, 3 is a collector region, 4 is a buried region, 5 is an isolation region, 6 is a base region, 7 is an emitter region, 8 is a cathode region, 9 is a diffused resistor, 10 is a Zener diode, 1
1 is a collector contact area.
Claims (1)
導体装置に於いて、前記半導体基板内に形成され
る一導電型のコレクタ領域と、このコレクタ領域
内に形成される逆導電型のベース領域と、このベ
ース領域に形成される一導電型のエミツタ領域お
よびカソード領域と、このエミツタ領域とカソー
ド領域との間に形成される拡散抵抗とを備えるこ
とを特徴とした半導体装置。 In a semiconductor device formed in a semiconductor substrate and generating a constant voltage, a collector region of one conductivity type formed in the semiconductor substrate, a base region of an opposite conductivity type formed in the collector region, A semiconductor device comprising: an emitter region and a cathode region of one conductivity type formed in the base region; and a diffused resistor formed between the emitter region and the cathode region.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1987160132U JPH0165153U (en) | 1987-10-20 | 1987-10-20 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1987160132U JPH0165153U (en) | 1987-10-20 | 1987-10-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0165153U true JPH0165153U (en) | 1989-04-26 |
Family
ID=31441931
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1987160132U Pending JPH0165153U (en) | 1987-10-20 | 1987-10-20 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0165153U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10279069B2 (en) | 2006-07-28 | 2019-05-07 | 3M Innovative Properties Company | Shape memory polymer articles with a microstructured surface |
-
1987
- 1987-10-20 JP JP1987160132U patent/JPH0165153U/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10279069B2 (en) | 2006-07-28 | 2019-05-07 | 3M Innovative Properties Company | Shape memory polymer articles with a microstructured surface |