JPH02132965U - - Google Patents
Info
- Publication number
- JPH02132965U JPH02132965U JP4179489U JP4179489U JPH02132965U JP H02132965 U JPH02132965 U JP H02132965U JP 4179489 U JP4179489 U JP 4179489U JP 4179489 U JP4179489 U JP 4179489U JP H02132965 U JPH02132965 U JP H02132965U
- Authority
- JP
- Japan
- Prior art keywords
- emitter
- base
- resistor
- collector
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003321 amplification Effects 0.000 claims description 2
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 7
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
Description
第１図は本考案を実施したホトトランジスタを
示す図であり、第２図はその等価回路図、第３図
は特性図である。第４図は本考案の他の実施例の
構造図である。第５図は従来例を示す図であり、
第６図はその等価回路図、第７図はその特性図で
ある。
１……半導体基板、５……ＳｉＯ２膜、６……
抵抗体層、ｈＦＥ……電流増幅率、Ｂ……ベース
、Ｃ……コレクタ、Ｅ……エミツタ。
FIG. 1 is a diagram showing a phototransistor embodying the present invention, FIG. 2 is an equivalent circuit diagram thereof, and FIG. 3 is a characteristic diagram thereof. FIG. 4 is a structural diagram of another embodiment of the present invention. FIG. 5 is a diagram showing a conventional example,
FIG. 6 is its equivalent circuit diagram, and FIG. 7 is its characteristic diagram. 1... Semiconductor substrate, 5... SiO 2 film, 6...
Resistor layer, hFE...current amplification factor, B...base, C...collector, E...emitter.
Claims (1)
体基板に電流増幅率ｈＦＥに反比例する抵抗体を
形成し該抵抗体を前記ベースとエミツタに接続し
たことを特徴とするホトトランジスタ。 A phototransistor characterized in that a resistor inversely proportional to a current amplification factor hFE is formed on a semiconductor substrate on which a collector, a base, and an emitter are formed, and the resistor is connected to the base and emitter.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4179489U JPH02132965U (en) | 1989-04-10 | 1989-04-10 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4179489U JPH02132965U (en) | 1989-04-10 | 1989-04-10 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02132965U true JPH02132965U (en) | 1990-11-05 |
Family
ID=31552770
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4179489U Pending JPH02132965U (en) | 1989-04-10 | 1989-04-10 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02132965U (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62219675A (en) * | 1986-03-20 | 1987-09-26 | Matsushita Electric Ind Co Ltd | Semiconductor photodetecting device |
-
1989
- 1989-04-10 JP JP4179489U patent/JPH02132965U/ja active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62219675A (en) * | 1986-03-20 | 1987-09-26 | Matsushita Electric Ind Co Ltd | Semiconductor photodetecting device |