JPS63145345U - - Google Patents
Info
- Publication number
- JPS63145345U JPS63145345U JP3590088U JP3590088U JPS63145345U JP S63145345 U JPS63145345 U JP S63145345U JP 3590088 U JP3590088 U JP 3590088U JP 3590088 U JP3590088 U JP 3590088U JP S63145345 U JPS63145345 U JP S63145345U
- Authority
- JP
- Japan
- Prior art keywords
- resistor
- stage circuit
- semiconductor substrate
- semiconductor
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 6
- 239000000758 substrate Substances 0.000 claims 3
- 238000010586 diagram Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Description
第１図は、単結晶抵抗を用いた場合のトランジ
スタ端子との結線パタン図、第２図は、第１図単
結晶抵抗と全く同じ大きさの多結晶抵抗を用いた
場合の、第１図に示したと同一結線パタン図、第
３図は本考案実施例に於る内部回路の代表例を示
す回路図である。第４図は本考案実施例の出力回
路の一例を示す回路図である。
Ｑ１〜Ｑ４，Ｑ′１〜Ｑ′４……トランジスタ
、３０１〜３０３，３０１′〜３０３′……抵抗
、１０１……拡散抵抗、２０４……単結晶シリコ
ン抵抗。
Figure 1 is a diagram of the connection pattern with the transistor terminal when a single crystal resistor is used, and Figure 2 is a diagram of the connection pattern with the transistor terminal when a single crystal resistor is used. FIG. 3 is a circuit diagram showing a typical example of the internal circuit in the embodiment of the present invention. FIG. 4 is a circuit diagram showing an example of an output circuit according to an embodiment of the present invention. Q1 to Q4 , Q'1 to Q'4 ...transistor, 301 to 303, 301' to 303'...resistance, 101...diffused resistor, 204...single crystal silicon resistor.
Claims (1)
む電気回路が形成された半導体装置に於いて、前
記出力段回路中のトランジスタのエミツタおよび
コレクタに接続された抵抗は前記半導体基板中に
形成された拡散抵抗で構成されており、前記前段
回路中の抵抗は前記半導体基板の上に形成された
多結晶半導体の抵抗で構成されていることを特徴
とする半導体装置。 In a semiconductor device in which an electric circuit including an output stage circuit and a preceding stage circuit is formed on a semiconductor substrate, a resistor connected to an emitter and a collector of a transistor in the output stage circuit is formed in the semiconductor substrate. 1. A semiconductor device comprising a diffused resistor, wherein the resistor in the pre-stage circuit is comprised of a polycrystalline semiconductor resistor formed on the semiconductor substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3590088U JPH0241868Y2 (en) | 1988-03-17 | 1988-03-17 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3590088U JPH0241868Y2 (en) | 1988-03-17 | 1988-03-17 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63145345U true JPS63145345U (en) | 1988-09-26 |
| JPH0241868Y2 JPH0241868Y2 (en) | 1990-11-08 |
Family
ID=30845812
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3590088U Expired JPH0241868Y2 (en) | 1988-03-17 | 1988-03-17 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0241868Y2 (en) |
-
1988
- 1988-03-17 JP JP3590088U patent/JPH0241868Y2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0241868Y2 (en) | 1990-11-08 |
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