JPS63195757U - - Google Patents
Info
- Publication number
- JPS63195757U JPS63195757U JP8725887U JP8725887U JPS63195757U JP S63195757 U JPS63195757 U JP S63195757U JP 8725887 U JP8725887 U JP 8725887U JP 8725887 U JP8725887 U JP 8725887U JP S63195757 U JPS63195757 U JP S63195757U
- Authority
- JP
- Japan
- Prior art keywords
- contact
- output transistor
- insulating layer
- common potential
- emitter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 2
- 230000001681 protective effect Effects 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 1
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
Description
第１図は本考案の一実施例の平面図、第２図は
オープンコレクタ出力回路の例を示す回路図、第
３図は従来の半導体集積回路の一例の平面図であ
る。
１……出力端子、２……出力トランジスタ、３
……保護抵抗、４……トランジスタ、５……共通
端子、１０……ボンデイングパツド、１１……コ
レクタ層、１２……ベース層、１３……エミツタ
層、１４……絶縁層、１５……金属配線、１６，
１７……コンタクト。
FIG. 1 is a plan view of an embodiment of the present invention, FIG. 2 is a circuit diagram showing an example of an open collector output circuit, and FIG. 3 is a plan view of an example of a conventional semiconductor integrated circuit. 1... Output terminal, 2... Output transistor, 3
...Protective resistor, 4...Transistor, 5...Common terminal, 10...Bonding pad, 11...Collector layer, 12...Base layer, 13...Emitter layer, 14...Insulating layer, 15... metal wiring, 16,
17...Contact.
Claims (1)
タのエミツタと共通電位間に保護抵抗を有する半
導体集積回路において、前記出力トランジスタの
近くの絶縁層に第１のコンタクトを設け、かかる
第１のコンタクトを前記出力トランジスタのエミ
ツタに金属配線で接続し、前記絶縁層の共通電位
コンタクトを前記第１のコンタクトよりも前記出
力トランジスタから遠く配置したことを特徴とす
る半導体集積回路。 In a semiconductor integrated circuit having an open collector output and having a protective resistor between the emitter of an output transistor and a common potential, a first contact is provided in an insulating layer near the output transistor, and the first contact is connected to the output transistor. A semiconductor integrated circuit, characterized in that the common potential contact of the insulating layer is connected to the emitter of the output transistor by a metal wiring, and the common potential contact of the insulating layer is disposed farther from the output transistor than the first contact.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8725887U JPS63195757U (en) | 1987-06-04 | 1987-06-04 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8725887U JPS63195757U (en) | 1987-06-04 | 1987-06-04 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63195757U true JPS63195757U (en) | 1988-12-16 |
Family
ID=30944315
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8725887U Pending JPS63195757U (en) | 1987-06-04 | 1987-06-04 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63195757U (en) |
-
1987
- 1987-06-04 JP JP8725887U patent/JPS63195757U/ja active Pending
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