JPS57176784A - Semiconductor laser device - Google Patents
Semiconductor laser deviceInfo
- Publication number
- JPS57176784A JPS57176784A JP5968381A JP5968381A JPS57176784A JP S57176784 A JPS57176784 A JP S57176784A JP 5968381 A JP5968381 A JP 5968381A JP 5968381 A JP5968381 A JP 5968381A JP S57176784 A JPS57176784 A JP S57176784A
- Authority
- JP
- Japan
- Prior art keywords
- type
- layer
- cap layer
- electrode
- current
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2238—Buried stripe structure with a terraced structure
Abstract
PURPOSE:To obtain a semiconductor laser device wherein laser oscillation is performed up to high optical output power in a fundamental lateral mode, by providing first and second current limiting layers in a P region and an N region, and squeezing the flowing current between said current limiting layer. CONSTITUTION:Current limiting layers are alternately provided on both sides of P-N junction, and a large contacting area is provided between a P electrode and a P type cap layer. That is, a P type part 9 is formed in an N type substrate 10, and an N type clad layer 11, an active layer 12, a P type clad layer 13, an N type cap layer 14, and a P type cap layer 15 are formed on the substrate 10. Then a P type electrode 16 and an N type electrode 17 are formed. The spread of the current is limited by the N type cap layer 14 and the P type part 9. By reducing the distance between them, the spread of the current can be reduced without reducing the contact area of the P type cap layer 15 and the P electrode 16.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5968381A JPS57176784A (en) | 1981-04-22 | 1981-04-22 | Semiconductor laser device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5968381A JPS57176784A (en) | 1981-04-22 | 1981-04-22 | Semiconductor laser device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57176784A true JPS57176784A (en) | 1982-10-30 |
Family
ID=13120240
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5968381A Pending JPS57176784A (en) | 1981-04-22 | 1981-04-22 | Semiconductor laser device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57176784A (en) |
-
1981
- 1981-04-22 JP JP5968381A patent/JPS57176784A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5752186A (en) | Semiconductor laser | |
| JPS57176784A (en) | Semiconductor laser device | |
| JPS6482587A (en) | Quantum well type semiconductor laser | |
| JPS5766685A (en) | Rib structure semiconductor laser | |
| JPS5763885A (en) | Semiconductor laser device | |
| JPS5789286A (en) | Semiconductor laser element | |
| JPS55153385A (en) | Current squeezing type semiconductor device | |
| JPS57145385A (en) | Method for generating light pulse train | |
| JPS57132387A (en) | Semiconductor laser device | |
| JPS56100488A (en) | Semiconductor laser device | |
| JPS5518078A (en) | Semiconductor light emission device | |
| JPS5335485A (en) | Semiconductor laser unit | |
| JPS5289079A (en) | Semiconductor hetero junction laser | |
| JPS5799792A (en) | Semiconductor laser device | |
| JPS5687390A (en) | Semiconductor laser | |
| JPS6442883A (en) | Semiconductor laser element | |
| JPS6457782A (en) | Semiconductor laser | |
| JPS5763884A (en) | Semiconductor light-emitting device | |
| JPS54160188A (en) | Semiconductor laser device and its manufacture | |
| JPS57139986A (en) | Manufacure of semiconductor laser | |
| JPS57152181A (en) | Manufacture of semiconductor laser device | |
| JPS5732692A (en) | Semiconductor laser device | |
| JPS56116687A (en) | Semiconductor laser device | |
| JPS5425686A (en) | Semiconductor junction laser | |
| JPS5635486A (en) | Semiconductor laser |