JPS57145385A - Method for generating light pulse train - Google Patents

Method for generating light pulse train

Info

Publication number
JPS57145385A
JPS57145385A JP3037881A JP3037881A JPS57145385A JP S57145385 A JPS57145385 A JP S57145385A JP 3037881 A JP3037881 A JP 3037881A JP 3037881 A JP3037881 A JP 3037881A JP S57145385 A JPS57145385 A JP S57145385A
Authority
JP
Japan
Prior art keywords
electrode
type semiconductor
dividing
substrate
confining layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3037881A
Other languages
Japanese (ja)
Other versions
JPS6257117B2 (en
Inventor
Hitoshi Kawaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP3037881A priority Critical patent/JPS57145385A/en
Publication of JPS57145385A publication Critical patent/JPS57145385A/en
Publication of JPS6257117B2 publication Critical patent/JPS6257117B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To obtain the light pulse train whose light intensity is modulated, by providing a concave part in a part of a resonator comprising laminated semiconductors whose opposing ends become the Fabry-P erot reflecting surfaces, respectively, thereby dividing an exciting region into two parts, and applying bias currents having the different threshold current values or the values in the vicinity thereof to the respective regions. CONSTITUTION:A laminated body 35 comprising a P type semiconductor substrate 31, a P type semiconductor confining layer 32, an N or P type semiconductor active layer 33, and an N type semiconductor confining layer 34 is formed. The opposing end surfaces are used as the Fabry-P erot reflecting surfaces 36 and 37, and double heterogeneous type semiconductor laser device is obtained. In this constitution, an electrode 38 is deposited on the side of the substrate 31, and the electrode 39 is deposited on the side of the confining layer 34. At this time, the concave part 40 is provided at the end part of the substrate 31, thereby dividing the electrode 38 into 41 and 42 and also dividing the exciting region into M1 and M2. Thereafter, a bias power source 45 is connected to the electrode 41 through a choke coil 43, and a bias power source 46 is connected to the electrode 42 through a choke coil 44. The electrode 39 is grounded.
JP3037881A 1981-03-03 1981-03-03 Method for generating light pulse train Granted JPS57145385A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3037881A JPS57145385A (en) 1981-03-03 1981-03-03 Method for generating light pulse train

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3037881A JPS57145385A (en) 1981-03-03 1981-03-03 Method for generating light pulse train

Publications (2)

Publication Number Publication Date
JPS57145385A true JPS57145385A (en) 1982-09-08
JPS6257117B2 JPS6257117B2 (en) 1987-11-30

Family

ID=12302212

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3037881A Granted JPS57145385A (en) 1981-03-03 1981-03-03 Method for generating light pulse train

Country Status (1)

Country Link
JP (1) JPS57145385A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59165480A (en) * 1983-03-10 1984-09-18 Nec Corp Semiconductor light emitting element
JPS6032381A (en) * 1983-08-01 1985-02-19 Matsushita Electric Ind Co Ltd Surface light emitting semiconductor laser device
JPS60186079A (en) * 1984-03-05 1985-09-21 Nippon Telegr & Teleph Corp <Ntt> Semiconductor laser device
JPS61271887A (en) * 1985-05-27 1986-12-02 Nippon Telegr & Teleph Corp <Ntt> Semiconductor laser
EP0632550A2 (en) * 1993-06-30 1995-01-04 Fujitsu Limited Modulation of laser diodes

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59165480A (en) * 1983-03-10 1984-09-18 Nec Corp Semiconductor light emitting element
JPH0451997B2 (en) * 1983-03-10 1992-08-20 Nippon Electric Co
JPS6032381A (en) * 1983-08-01 1985-02-19 Matsushita Electric Ind Co Ltd Surface light emitting semiconductor laser device
JPS60186079A (en) * 1984-03-05 1985-09-21 Nippon Telegr & Teleph Corp <Ntt> Semiconductor laser device
JPS61271887A (en) * 1985-05-27 1986-12-02 Nippon Telegr & Teleph Corp <Ntt> Semiconductor laser
EP0632550A2 (en) * 1993-06-30 1995-01-04 Fujitsu Limited Modulation of laser diodes
EP0632550A3 (en) * 1993-06-30 1995-04-26 Fujitsu Ltd Modulation of laser diodes.
US6044097A (en) * 1993-06-30 2000-03-28 Fujitsu Limited Modulator integrated distributed feed-back laser diode module and device using the same

Also Published As

Publication number Publication date
JPS6257117B2 (en) 1987-11-30

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