JPS57145385A - Method for generating light pulse train - Google Patents
Method for generating light pulse trainInfo
- Publication number
- JPS57145385A JPS57145385A JP3037881A JP3037881A JPS57145385A JP S57145385 A JPS57145385 A JP S57145385A JP 3037881 A JP3037881 A JP 3037881A JP 3037881 A JP3037881 A JP 3037881A JP S57145385 A JPS57145385 A JP S57145385A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- type semiconductor
- dividing
- substrate
- confining layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
PURPOSE:To obtain the light pulse train whose light intensity is modulated, by providing a concave part in a part of a resonator comprising laminated semiconductors whose opposing ends become the Fabry-P erot reflecting surfaces, respectively, thereby dividing an exciting region into two parts, and applying bias currents having the different threshold current values or the values in the vicinity thereof to the respective regions. CONSTITUTION:A laminated body 35 comprising a P type semiconductor substrate 31, a P type semiconductor confining layer 32, an N or P type semiconductor active layer 33, and an N type semiconductor confining layer 34 is formed. The opposing end surfaces are used as the Fabry-P erot reflecting surfaces 36 and 37, and double heterogeneous type semiconductor laser device is obtained. In this constitution, an electrode 38 is deposited on the side of the substrate 31, and the electrode 39 is deposited on the side of the confining layer 34. At this time, the concave part 40 is provided at the end part of the substrate 31, thereby dividing the electrode 38 into 41 and 42 and also dividing the exciting region into M1 and M2. Thereafter, a bias power source 45 is connected to the electrode 41 through a choke coil 43, and a bias power source 46 is connected to the electrode 42 through a choke coil 44. The electrode 39 is grounded.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3037881A JPS57145385A (en) | 1981-03-03 | 1981-03-03 | Method for generating light pulse train |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3037881A JPS57145385A (en) | 1981-03-03 | 1981-03-03 | Method for generating light pulse train |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57145385A true JPS57145385A (en) | 1982-09-08 |
JPS6257117B2 JPS6257117B2 (en) | 1987-11-30 |
Family
ID=12302212
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3037881A Granted JPS57145385A (en) | 1981-03-03 | 1981-03-03 | Method for generating light pulse train |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57145385A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59165480A (en) * | 1983-03-10 | 1984-09-18 | Nec Corp | Semiconductor light emitting element |
JPS6032381A (en) * | 1983-08-01 | 1985-02-19 | Matsushita Electric Ind Co Ltd | Surface light emitting semiconductor laser device |
JPS60186079A (en) * | 1984-03-05 | 1985-09-21 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor laser device |
JPS61271887A (en) * | 1985-05-27 | 1986-12-02 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor laser |
EP0632550A2 (en) * | 1993-06-30 | 1995-01-04 | Fujitsu Limited | Modulation of laser diodes |
-
1981
- 1981-03-03 JP JP3037881A patent/JPS57145385A/en active Granted
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59165480A (en) * | 1983-03-10 | 1984-09-18 | Nec Corp | Semiconductor light emitting element |
JPH0451997B2 (en) * | 1983-03-10 | 1992-08-20 | Nippon Electric Co | |
JPS6032381A (en) * | 1983-08-01 | 1985-02-19 | Matsushita Electric Ind Co Ltd | Surface light emitting semiconductor laser device |
JPS60186079A (en) * | 1984-03-05 | 1985-09-21 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor laser device |
JPS61271887A (en) * | 1985-05-27 | 1986-12-02 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor laser |
EP0632550A2 (en) * | 1993-06-30 | 1995-01-04 | Fujitsu Limited | Modulation of laser diodes |
EP0632550A3 (en) * | 1993-06-30 | 1995-04-26 | Fujitsu Ltd | Modulation of laser diodes. |
US6044097A (en) * | 1993-06-30 | 2000-03-28 | Fujitsu Limited | Modulator integrated distributed feed-back laser diode module and device using the same |
Also Published As
Publication number | Publication date |
---|---|
JPS6257117B2 (en) | 1987-11-30 |
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