JPS6461085A - Semiconductor laser - Google Patents
Semiconductor laserInfo
- Publication number
- JPS6461085A JPS6461085A JP21940887A JP21940887A JPS6461085A JP S6461085 A JPS6461085 A JP S6461085A JP 21940887 A JP21940887 A JP 21940887A JP 21940887 A JP21940887 A JP 21940887A JP S6461085 A JPS6461085 A JP S6461085A
- Authority
- JP
- Japan
- Prior art keywords
- electrode layer
- fusing
- fused
- heat sink
- active region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Semiconductor Lasers (AREA)
Abstract
PURPOSE:To decrease effective capacitance without decreasing fusion attaching strength, by forming first and second electrically insulated fusion attaching parts at positions corresponding to first and second electrode layers on the side of a heat sink. CONSTITUTION:Grooves 15 are formed on both sides of an active region. An insulating layer 13 is formed on the inner surfaces of the grooves. A stripe shaped first electrode layer 14a, which is slightly wider than an active region 12, is formed in parallel with the active region 12 on the side surface, which is fused and attached to a heat sink 2. Second electrode layers 14b and 14c, which are electrically insulated from the first electrode layer 14a, with the insulating layer 13, are formed on both sides of the first electrode layer 14a. A fusing and attaching part 22a is formed on the heat sink 2 and fused and attached to the first electrode layer 14a. Second fusing and attaching parts 22b and 22c, which are electrically insulated from the first fusing and attaching part 22a, are formed at positions corresponding to the second electrode layers 14b and 14c and fused and attached to the second electrodes 14b and 14c.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21940887A JPS6461085A (en) | 1987-09-01 | 1987-09-01 | Semiconductor laser |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21940887A JPS6461085A (en) | 1987-09-01 | 1987-09-01 | Semiconductor laser |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6461085A true JPS6461085A (en) | 1989-03-08 |
Family
ID=16734935
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP21940887A Pending JPS6461085A (en) | 1987-09-01 | 1987-09-01 | Semiconductor laser |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6461085A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04223387A (en) * | 1990-12-25 | 1992-08-13 | Matsushita Electron Corp | Semiconductor light emitting element and manufacture thereof |
EP0936706A1 (en) * | 1998-02-16 | 1999-08-18 | Nec Corporation | Array type laser diode |
JP2001257435A (en) * | 2000-03-08 | 2001-09-21 | Nippon Telegr & Teleph Corp <Ntt> | Optical transmitter |
JP2006073644A (en) * | 2004-08-31 | 2006-03-16 | Sanyo Electric Co Ltd | Semiconductor laser device |
JP2009188273A (en) * | 2008-02-07 | 2009-08-20 | Rohm Co Ltd | Junction-down type optical semiconductor element, and optical semiconductor device |
-
1987
- 1987-09-01 JP JP21940887A patent/JPS6461085A/en active Pending
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04223387A (en) * | 1990-12-25 | 1992-08-13 | Matsushita Electron Corp | Semiconductor light emitting element and manufacture thereof |
EP0936706A1 (en) * | 1998-02-16 | 1999-08-18 | Nec Corporation | Array type laser diode |
US6353625B1 (en) | 1998-02-16 | 2002-03-05 | Nec Corporation | Array type laser diode |
JP2001257435A (en) * | 2000-03-08 | 2001-09-21 | Nippon Telegr & Teleph Corp <Ntt> | Optical transmitter |
JP2006073644A (en) * | 2004-08-31 | 2006-03-16 | Sanyo Electric Co Ltd | Semiconductor laser device |
JP2009188273A (en) * | 2008-02-07 | 2009-08-20 | Rohm Co Ltd | Junction-down type optical semiconductor element, and optical semiconductor device |
US8193552B2 (en) | 2008-02-07 | 2012-06-05 | Rohm Co., Ltd. | Semiconductor light emitting device of junction-down type and semiconductor light emitting element of junction-down type |
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