JPS6461085A - Semiconductor laser - Google Patents

Semiconductor laser

Info

Publication number
JPS6461085A
JPS6461085A JP21940887A JP21940887A JPS6461085A JP S6461085 A JPS6461085 A JP S6461085A JP 21940887 A JP21940887 A JP 21940887A JP 21940887 A JP21940887 A JP 21940887A JP S6461085 A JPS6461085 A JP S6461085A
Authority
JP
Japan
Prior art keywords
electrode layer
fusing
fused
heat sink
active region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP21940887A
Other languages
Japanese (ja)
Inventor
Kunio Uehara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP21940887A priority Critical patent/JPS6461085A/en
Publication of JPS6461085A publication Critical patent/JPS6461085A/en
Pending legal-status Critical Current

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  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To decrease effective capacitance without decreasing fusion attaching strength, by forming first and second electrically insulated fusion attaching parts at positions corresponding to first and second electrode layers on the side of a heat sink. CONSTITUTION:Grooves 15 are formed on both sides of an active region. An insulating layer 13 is formed on the inner surfaces of the grooves. A stripe shaped first electrode layer 14a, which is slightly wider than an active region 12, is formed in parallel with the active region 12 on the side surface, which is fused and attached to a heat sink 2. Second electrode layers 14b and 14c, which are electrically insulated from the first electrode layer 14a, with the insulating layer 13, are formed on both sides of the first electrode layer 14a. A fusing and attaching part 22a is formed on the heat sink 2 and fused and attached to the first electrode layer 14a. Second fusing and attaching parts 22b and 22c, which are electrically insulated from the first fusing and attaching part 22a, are formed at positions corresponding to the second electrode layers 14b and 14c and fused and attached to the second electrodes 14b and 14c.
JP21940887A 1987-09-01 1987-09-01 Semiconductor laser Pending JPS6461085A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21940887A JPS6461085A (en) 1987-09-01 1987-09-01 Semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21940887A JPS6461085A (en) 1987-09-01 1987-09-01 Semiconductor laser

Publications (1)

Publication Number Publication Date
JPS6461085A true JPS6461085A (en) 1989-03-08

Family

ID=16734935

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21940887A Pending JPS6461085A (en) 1987-09-01 1987-09-01 Semiconductor laser

Country Status (1)

Country Link
JP (1) JPS6461085A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04223387A (en) * 1990-12-25 1992-08-13 Matsushita Electron Corp Semiconductor light emitting element and manufacture thereof
EP0936706A1 (en) * 1998-02-16 1999-08-18 Nec Corporation Array type laser diode
JP2001257435A (en) * 2000-03-08 2001-09-21 Nippon Telegr & Teleph Corp <Ntt> Optical transmitter
JP2006073644A (en) * 2004-08-31 2006-03-16 Sanyo Electric Co Ltd Semiconductor laser device
JP2009188273A (en) * 2008-02-07 2009-08-20 Rohm Co Ltd Junction-down type optical semiconductor element, and optical semiconductor device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04223387A (en) * 1990-12-25 1992-08-13 Matsushita Electron Corp Semiconductor light emitting element and manufacture thereof
EP0936706A1 (en) * 1998-02-16 1999-08-18 Nec Corporation Array type laser diode
US6353625B1 (en) 1998-02-16 2002-03-05 Nec Corporation Array type laser diode
JP2001257435A (en) * 2000-03-08 2001-09-21 Nippon Telegr & Teleph Corp <Ntt> Optical transmitter
JP2006073644A (en) * 2004-08-31 2006-03-16 Sanyo Electric Co Ltd Semiconductor laser device
JP2009188273A (en) * 2008-02-07 2009-08-20 Rohm Co Ltd Junction-down type optical semiconductor element, and optical semiconductor device
US8193552B2 (en) 2008-02-07 2012-06-05 Rohm Co., Ltd. Semiconductor light emitting device of junction-down type and semiconductor light emitting element of junction-down type

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