JPS57153485A - Laser device - Google Patents
Laser deviceInfo
- Publication number
- JPS57153485A JPS57153485A JP3914281A JP3914281A JPS57153485A JP S57153485 A JPS57153485 A JP S57153485A JP 3914281 A JP3914281 A JP 3914281A JP 3914281 A JP3914281 A JP 3914281A JP S57153485 A JPS57153485 A JP S57153485A
- Authority
- JP
- Japan
- Prior art keywords
- region
- semiconductor
- electrode
- laser
- carriers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Lasers (AREA)
Abstract
PURPOSE:To obtain a highly efficient laser light with modulated frequency and strength by providing a semiconductor in a laser resonator and by supplying the semiconductor laser passage region with carriers. CONSTITUTION:A semiconductor 9 through which a laser light 5 passes is provided in a laser resonator comprising a laser activating media 1 and a pair of reflectors 2, 3. The semiconductor 9 comprises a laser light passage region 6 and a carrier generator region 8. In this construction, carriers are generated in the region 8 when a modulated voltage Vp applied between an electrode 10 provided in the semiconductor 9 and an electrode 22 provided in the semiconductor region 20, constituting the region 8, with the electrode 10 positive. If a direct current voltage Vd is applied between the electrodes 10 and 11 with the electrode 10 positive, the carriers travel through the region 6 and reach the electrode 10. While the carriers are in the region 6, refractive index becomes larger and the laser light 28 with modulated frequency and strength is obtained.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3914281A JPS5917993B2 (en) | 1981-03-17 | 1981-03-17 | Laser device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3914281A JPS5917993B2 (en) | 1981-03-17 | 1981-03-17 | Laser device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57153485A true JPS57153485A (en) | 1982-09-22 |
JPS5917993B2 JPS5917993B2 (en) | 1984-04-24 |
Family
ID=12544850
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3914281A Expired JPS5917993B2 (en) | 1981-03-17 | 1981-03-17 | Laser device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5917993B2 (en) |
-
1981
- 1981-03-17 JP JP3914281A patent/JPS5917993B2/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS5917993B2 (en) | 1984-04-24 |
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