JPS57117289A - Semiconductor laser - Google Patents

Semiconductor laser

Info

Publication number
JPS57117289A
JPS57117289A JP419981A JP419981A JPS57117289A JP S57117289 A JPS57117289 A JP S57117289A JP 419981 A JP419981 A JP 419981A JP 419981 A JP419981 A JP 419981A JP S57117289 A JPS57117289 A JP S57117289A
Authority
JP
Japan
Prior art keywords
laminated
electrodes
active layer
semiconductor laser
laminated body
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP419981A
Other languages
Japanese (ja)
Inventor
Etsuo Noguchi
Haruo Nagai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP419981A priority Critical patent/JPS57117289A/en
Publication of JPS57117289A publication Critical patent/JPS57117289A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06209—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in single-section lasers
    • H01S5/06213—Amplitude modulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To enable to connect laser rays having different wave length to multimode type optical fibers by a method wherein two semiconductor laser devices are constituted of laminated bodies having mutually different crystal layers, and the prescribed signal generators are connected thereto. CONSTITUTION:A clad layer 2A, an active layer 3A, a clad layer 4A, an active layer 5A and a clad layer 6A are laminated in order to form a laminated body 7A, the first semiconductor laser device 15A is constituted of the laminated body 7A thereof and electrodes 10A, 11, and the second semiconductor laser devide 15B having a laminated body 7B being laminated with opposite crystal layers to the laminated body 7A and electrodes 10B, 11 and making an active layer 3B as the effective active layer is constituted. The signal generators 16A, 16B consisting of a DC bias electric power source and a modulating signal source are connected between the electrodes of the respective laser devices making the electrodes 10A, 10B side as positive, and laser rays being different mutually and having wave length being modulated in accordance with modulating signal currents sent out from the respective signal generators are obtained from the respective laminated bodies 7A, 7B.
JP419981A 1981-01-14 1981-01-14 Semiconductor laser Pending JPS57117289A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP419981A JPS57117289A (en) 1981-01-14 1981-01-14 Semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP419981A JPS57117289A (en) 1981-01-14 1981-01-14 Semiconductor laser

Publications (1)

Publication Number Publication Date
JPS57117289A true JPS57117289A (en) 1982-07-21

Family

ID=11577984

Family Applications (1)

Application Number Title Priority Date Filing Date
JP419981A Pending JPS57117289A (en) 1981-01-14 1981-01-14 Semiconductor laser

Country Status (1)

Country Link
JP (1) JPS57117289A (en)

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