JPS57115892A - Semiconductor laser element - Google Patents

Semiconductor laser element

Info

Publication number
JPS57115892A
JPS57115892A JP211381A JP211381A JPS57115892A JP S57115892 A JPS57115892 A JP S57115892A JP 211381 A JP211381 A JP 211381A JP 211381 A JP211381 A JP 211381A JP S57115892 A JPS57115892 A JP S57115892A
Authority
JP
Japan
Prior art keywords
active layer
laser light
layer
active
phase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP211381A
Other languages
Japanese (ja)
Inventor
Toyohiro Takimoto
Kenji Ikeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP211381A priority Critical patent/JPS57115892A/en
Publication of JPS57115892A publication Critical patent/JPS57115892A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4043—Edge-emitting structures with vertically stacked active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2203—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure with a transverse junction stripe [TJS] structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To use the semiconductor laser element as a light source of optical communications and optical signal processing, by oscillating two or more layers of active regions with their phases being positively synchronized, and obtaining the laser light having high output power and a narrow radiation pattern from the semiconductor laser element. CONSTITUTION:On a substrate crystal 2, a clad layer (1) 3, an active layer (1) 4, a clad layer (2) 5, an active layer (2) 6, a clad layer (3) 7, and a final layer 8 are sequentially formed. A common active layer part 17 is formed by combining said active layer (1) 4 and active layer (2) 6. The phase of the laser light in the active region (1) 15 and the phase of the laser light in the active region (2) 16 are perfectly synchronized in the common active layer part 17. Under this phase synchronized state, the phase synchronized laser light output is obtained from the end face of the semiconductor element, and the laser light having a single wavelength, high power, and the narrow radiation pattern is outputted. The laminated body of each clad layer and each active layer is formed by the side having P type conductivity and the side having N type conductivity.
JP211381A 1981-01-12 1981-01-12 Semiconductor laser element Pending JPS57115892A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP211381A JPS57115892A (en) 1981-01-12 1981-01-12 Semiconductor laser element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP211381A JPS57115892A (en) 1981-01-12 1981-01-12 Semiconductor laser element

Publications (1)

Publication Number Publication Date
JPS57115892A true JPS57115892A (en) 1982-07-19

Family

ID=11520289

Family Applications (1)

Application Number Title Priority Date Filing Date
JP211381A Pending JPS57115892A (en) 1981-01-12 1981-01-12 Semiconductor laser element

Country Status (1)

Country Link
JP (1) JPS57115892A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01120085A (en) * 1987-11-02 1989-05-12 Matsushita Electric Ind Co Ltd Manufacture of semiconductor laser

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53112080A (en) * 1977-03-10 1978-09-30 Mitsubishi Electric Corp Semiconductor laser
JPS54101686A (en) * 1978-01-13 1979-08-10 Xerox Corp Hetero junction laser and method of fabricating same
JPS55132091A (en) * 1979-04-02 1980-10-14 Nippon Telegr & Teleph Corp <Ntt> Semiconductor laser array

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53112080A (en) * 1977-03-10 1978-09-30 Mitsubishi Electric Corp Semiconductor laser
JPS54101686A (en) * 1978-01-13 1979-08-10 Xerox Corp Hetero junction laser and method of fabricating same
JPS55132091A (en) * 1979-04-02 1980-10-14 Nippon Telegr & Teleph Corp <Ntt> Semiconductor laser array

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01120085A (en) * 1987-11-02 1989-05-12 Matsushita Electric Ind Co Ltd Manufacture of semiconductor laser

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