JPS6484685A - Semiconductor laser device - Google Patents
Semiconductor laser deviceInfo
- Publication number
- JPS6484685A JPS6484685A JP24084487A JP24084487A JPS6484685A JP S6484685 A JPS6484685 A JP S6484685A JP 24084487 A JP24084487 A JP 24084487A JP 24084487 A JP24084487 A JP 24084487A JP S6484685 A JPS6484685 A JP S6484685A
- Authority
- JP
- Japan
- Prior art keywords
- loss
- layer
- mode
- oscillation
- semiconductor laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Semiconductor Lasers (AREA)
Abstract
PURPOSE:To enable the oscillation in TM mode to be performed, by providing a loss layer which has loss of absorption in the wavelength of laser oscillation in a clad layer and by making the loss in TE mode owing to the loss layer to be more large than that in the TM mode. CONSTITUTION:A clad layer 11, an active layer 12, clad layers 13, a contact layer 14, and a loss layer 15 are formed on a substrate 10, respectively. For the loss layer 15, both the thickness thereof and the distance from the active layer 12 are set so that the loss in TE mode is large compared with that in TM mode. As a result, the loss layer serves as the layer which has a large loss of absorption in the TE mode and thus the loss in the TM mode is made to be smaller than that in the TE mode. Therefore, the oscillation in the TM mode can be effectively performed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62240844A JP2565924B2 (en) | 1987-09-28 | 1987-09-28 | Semiconductor laser device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62240844A JP2565924B2 (en) | 1987-09-28 | 1987-09-28 | Semiconductor laser device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6484685A true JPS6484685A (en) | 1989-03-29 |
JP2565924B2 JP2565924B2 (en) | 1996-12-18 |
Family
ID=17065546
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62240844A Expired - Fee Related JP2565924B2 (en) | 1987-09-28 | 1987-09-28 | Semiconductor laser device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2565924B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007208062A (en) * | 2006-02-02 | 2007-08-16 | Sumitomo Electric Ind Ltd | Semiconductor laser element |
-
1987
- 1987-09-28 JP JP62240844A patent/JP2565924B2/en not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007208062A (en) * | 2006-02-02 | 2007-08-16 | Sumitomo Electric Ind Ltd | Semiconductor laser element |
Also Published As
Publication number | Publication date |
---|---|
JP2565924B2 (en) | 1996-12-18 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |