JPS6484685A - Semiconductor laser device - Google Patents

Semiconductor laser device

Info

Publication number
JPS6484685A
JPS6484685A JP24084487A JP24084487A JPS6484685A JP S6484685 A JPS6484685 A JP S6484685A JP 24084487 A JP24084487 A JP 24084487A JP 24084487 A JP24084487 A JP 24084487A JP S6484685 A JPS6484685 A JP S6484685A
Authority
JP
Japan
Prior art keywords
loss
layer
mode
oscillation
semiconductor laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP24084487A
Other languages
Japanese (ja)
Other versions
JP2565924B2 (en
Inventor
Genichi Hatagoshi
Masayuki Ishikawa
Naoto Mogi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP62240844A priority Critical patent/JP2565924B2/en
Publication of JPS6484685A publication Critical patent/JPS6484685A/en
Application granted granted Critical
Publication of JP2565924B2 publication Critical patent/JP2565924B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To enable the oscillation in TM mode to be performed, by providing a loss layer which has loss of absorption in the wavelength of laser oscillation in a clad layer and by making the loss in TE mode owing to the loss layer to be more large than that in the TM mode. CONSTITUTION:A clad layer 11, an active layer 12, clad layers 13, a contact layer 14, and a loss layer 15 are formed on a substrate 10, respectively. For the loss layer 15, both the thickness thereof and the distance from the active layer 12 are set so that the loss in TE mode is large compared with that in TM mode. As a result, the loss layer serves as the layer which has a large loss of absorption in the TE mode and thus the loss in the TM mode is made to be smaller than that in the TE mode. Therefore, the oscillation in the TM mode can be effectively performed.
JP62240844A 1987-09-28 1987-09-28 Semiconductor laser device Expired - Fee Related JP2565924B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62240844A JP2565924B2 (en) 1987-09-28 1987-09-28 Semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62240844A JP2565924B2 (en) 1987-09-28 1987-09-28 Semiconductor laser device

Publications (2)

Publication Number Publication Date
JPS6484685A true JPS6484685A (en) 1989-03-29
JP2565924B2 JP2565924B2 (en) 1996-12-18

Family

ID=17065546

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62240844A Expired - Fee Related JP2565924B2 (en) 1987-09-28 1987-09-28 Semiconductor laser device

Country Status (1)

Country Link
JP (1) JP2565924B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007208062A (en) * 2006-02-02 2007-08-16 Sumitomo Electric Ind Ltd Semiconductor laser element

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007208062A (en) * 2006-02-02 2007-08-16 Sumitomo Electric Ind Ltd Semiconductor laser element

Also Published As

Publication number Publication date
JP2565924B2 (en) 1996-12-18

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees