JPS55141778A - Semiconductor laser and manufacturing the same - Google Patents

Semiconductor laser and manufacturing the same

Info

Publication number
JPS55141778A
JPS55141778A JP4952079A JP4952079A JPS55141778A JP S55141778 A JPS55141778 A JP S55141778A JP 4952079 A JP4952079 A JP 4952079A JP 4952079 A JP4952079 A JP 4952079A JP S55141778 A JPS55141778 A JP S55141778A
Authority
JP
Japan
Prior art keywords
thickness
groove
clad layer
light
semiconductor laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4952079A
Other languages
Japanese (ja)
Inventor
Masaru Wada
Yuichi Shimizu
Takashi Sugino
Kunio Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP4952079A priority Critical patent/JPS55141778A/en
Publication of JPS55141778A publication Critical patent/JPS55141778A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2237—Buried stripe structure with a non-planar active layer

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To oscillate a semiconductor laser in circular spot state without occuring a mode variation by forming a clad layer increased partially in thickness between the light emitting active region and a light absorbing region. CONSTITUTION:A ridge 11 having a groove 10 of 10mum wide is formed along the cavity surface using a solution containing H2O:H2O2:H2SO4=8:8:1 on an n-type GaAs substrate 1. Then, an n-type Ga1-xAlXAs layers 3 having thickness of 0.3mum and 1.5mum on the ridge and on the other flat surface containing a groove 10, respectively. Subsequently, a Ga1-YAlYAs active region layer 4 having a thickness of 0.1mum is formed thereon. Since the clad layer 4 having a thickness of 0.1mum is formed thereon. Since the clad layer 3 has a sufficient thickness for enclosing the light only at the portion of the groove 10, the oscillation light to be irradiated from the portion except the groove 10 is absorbed to the substrate 1, so that only single substrate mode is oscillated.
JP4952079A 1979-04-20 1979-04-20 Semiconductor laser and manufacturing the same Pending JPS55141778A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4952079A JPS55141778A (en) 1979-04-20 1979-04-20 Semiconductor laser and manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4952079A JPS55141778A (en) 1979-04-20 1979-04-20 Semiconductor laser and manufacturing the same

Publications (1)

Publication Number Publication Date
JPS55141778A true JPS55141778A (en) 1980-11-05

Family

ID=12833403

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4952079A Pending JPS55141778A (en) 1979-04-20 1979-04-20 Semiconductor laser and manufacturing the same

Country Status (1)

Country Link
JP (1) JPS55141778A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5957487A (en) * 1982-09-27 1984-04-03 Mitsubishi Electric Corp Semiconductor laser device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5957487A (en) * 1982-09-27 1984-04-03 Mitsubishi Electric Corp Semiconductor laser device

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