JPS648690A - External resonator type semiconductor laser device - Google Patents

External resonator type semiconductor laser device

Info

Publication number
JPS648690A
JPS648690A JP16446887A JP16446887A JPS648690A JP S648690 A JPS648690 A JP S648690A JP 16446887 A JP16446887 A JP 16446887A JP 16446887 A JP16446887 A JP 16446887A JP S648690 A JPS648690 A JP S648690A
Authority
JP
Japan
Prior art keywords
reflectivity
face
coated
layer
semiconductor laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16446887A
Other languages
Japanese (ja)
Inventor
Nobuyuki Miyauchi
Osamu Yamamoto
Shigeki Maei
Shusuke Kasai
Hiroshi Hayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP16446887A priority Critical patent/JPS648690A/en
Publication of JPS648690A publication Critical patent/JPS648690A/en
Pending legal-status Critical Current

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  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To effectively suppress the competition of mode hop to the proximity mode of an oscillation axis mode, multimode or the proximity mode even if returning light exists and to eliminate the necessity of using an optical isolator by constructing the title device so as to have a high reflectivity for an oscillation axis mode wavelength in the reflectivity of the forward emitting end face of a semiconductor laser element. CONSTITUTION:A VSIS semiconductor laser element 1 having an AlGaAs layer as an active layer on a GaAs substrate, and an external reflecting member 3 made of a GaAs chip coated with a dielectric multilayered film 2 on the cleaved end face for providing high reflectivity are secured at an interval of 60mum of external resonator length. The forward emitting end face 6 of the element 1 is coated with multilayers of Al2O3 layer 5 and an a-Si layer 7 to set its reflectivity to 0.5, and the rearward emitting end face 8 is coated with an Al2O3 5 single layer in thickness corresponding to 1/2 of an optical oscillation axis mode wavelength to set its reflectivity to 0.32. The cleaved end face 9 of a GaAs chip is coated with multilayers of the layers 5, 7 to set its reflectivity to 0.95.
JP16446887A 1987-06-30 1987-06-30 External resonator type semiconductor laser device Pending JPS648690A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16446887A JPS648690A (en) 1987-06-30 1987-06-30 External resonator type semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16446887A JPS648690A (en) 1987-06-30 1987-06-30 External resonator type semiconductor laser device

Publications (1)

Publication Number Publication Date
JPS648690A true JPS648690A (en) 1989-01-12

Family

ID=15793752

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16446887A Pending JPS648690A (en) 1987-06-30 1987-06-30 External resonator type semiconductor laser device

Country Status (1)

Country Link
JP (1) JPS648690A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000060710A1 (en) * 1999-03-31 2000-10-12 Japan As Represented By Director General Of Agency Of Industrial Science And Technology Surface optical amplifier and method of producing the same
KR100763009B1 (en) * 2006-07-25 2007-10-17 재단법인 포항지능로봇연구소 Apparatus for joint and apparatus for hand of robot by using the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000060710A1 (en) * 1999-03-31 2000-10-12 Japan As Represented By Director General Of Agency Of Industrial Science And Technology Surface optical amplifier and method of producing the same
US6480516B1 (en) 1999-03-31 2002-11-12 Japan As Represented By Secretary Of Agency Of Industrial Science And Technology Surface semiconductor optical amplifier with transparent substrate
KR100763009B1 (en) * 2006-07-25 2007-10-17 재단법인 포항지능로봇연구소 Apparatus for joint and apparatus for hand of robot by using the same

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