JPS55107289A - Semiconductor laser device - Google Patents

Semiconductor laser device

Info

Publication number
JPS55107289A
JPS55107289A JP1476979A JP1476979A JPS55107289A JP S55107289 A JPS55107289 A JP S55107289A JP 1476979 A JP1476979 A JP 1476979A JP 1476979 A JP1476979 A JP 1476979A JP S55107289 A JPS55107289 A JP S55107289A
Authority
JP
Japan
Prior art keywords
end surfaces
active layer
laser device
resonance
directivity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1476979A
Other languages
Japanese (ja)
Inventor
Saburo Takamiya
Toshio Tanaka
Shigeyuki Nitsuta
Kazuto Matsui
Yoshito Ikuwa
Wataru Suzaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP1476979A priority Critical patent/JPS55107289A/en
Publication of JPS55107289A publication Critical patent/JPS55107289A/en
Pending legal-status Critical Current

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  • Semiconductor Lasers (AREA)

Abstract

PURPOSE: To improve directivity of emission beam, by employing a convex surface on at least one of the both end surfaces constituting resonance end surfaces of a laser device.
CONSTITUTION: Of resonance end surfaces 4a and 5a of a laser device covered by an active layer 1 and clad layers 2 and 3, at least one of these end surfaces or the both is or made into a convex surface. In other words, a region to be caught between an assumed base surface 4r and a resonance end surface 4a is to be made in to a convex lens. This can be done by using an etching liquid good suitable for these layers and by making the most of difference in etching speed between the active layer 1 and the clad layers 2 and 3. While reflecting rate on the end surfaces 4a and 4b is deteriorated in effect as rising height d gets closer to the order of wavelength of laser light, when it is seen from inside of the laser diode, the end surface can be regarded as a concave mirror and therefore lights returning to the diode are effectively gathered on the active layer 1. And therefore, directivity of emission beam become enlarged.
COPYRIGHT: (C)1980,JPO&Japio
JP1476979A 1979-02-12 1979-02-12 Semiconductor laser device Pending JPS55107289A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1476979A JPS55107289A (en) 1979-02-12 1979-02-12 Semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1476979A JPS55107289A (en) 1979-02-12 1979-02-12 Semiconductor laser device

Publications (1)

Publication Number Publication Date
JPS55107289A true JPS55107289A (en) 1980-08-16

Family

ID=11870262

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1476979A Pending JPS55107289A (en) 1979-02-12 1979-02-12 Semiconductor laser device

Country Status (1)

Country Link
JP (1) JPS55107289A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58225678A (en) * 1982-06-23 1983-12-27 Sumitomo Electric Ind Ltd Semiconductor laser device
JPS63170985A (en) * 1987-01-09 1988-07-14 Hitachi Ltd Semiconductor laser element and its device
US5495492A (en) * 1992-08-11 1996-02-27 Sony Corporation Semiconductor laser having an active layer with a fan-shaped stripe with curved end surfaces

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58225678A (en) * 1982-06-23 1983-12-27 Sumitomo Electric Ind Ltd Semiconductor laser device
JPS63170985A (en) * 1987-01-09 1988-07-14 Hitachi Ltd Semiconductor laser element and its device
US5495492A (en) * 1992-08-11 1996-02-27 Sony Corporation Semiconductor laser having an active layer with a fan-shaped stripe with curved end surfaces

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