JPH03190180A - Semiconductor laser with lens - Google Patents
Semiconductor laser with lensInfo
- Publication number
- JPH03190180A JPH03190180A JP32990589A JP32990589A JPH03190180A JP H03190180 A JPH03190180 A JP H03190180A JP 32990589 A JP32990589 A JP 32990589A JP 32990589 A JP32990589 A JP 32990589A JP H03190180 A JPH03190180 A JP H03190180A
- Authority
- JP
- Japan
- Prior art keywords
- lens
- semiconductor laser
- groove
- active layer
- substrate crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 39
- 239000013078 crystal Substances 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 abstract description 2
- 238000005253 cladding Methods 0.000 description 13
- 230000031700 light absorption Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
Landscapes
- Semiconductor Lasers (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明はレンズ付半導体レーザの高性能化に関するも
のである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] This invention relates to improving the performance of a lens-equipped semiconductor laser.
第３図は、従来のレンズ付半導体レーザの上面図、第４
図は第３図に示すＵ、−Ｈにおける断面図である。図に
おいて（１）は基板結晶、（２）は半導体レーザ、（８
）は半導体よ構成るレンズ、（４）は発振領域たるスト
ライプ、（６）は第１クラッド層、Ｌ６）は活性層、（
ア）は第２クラッド層、（８）はストライプ（４）の領
域より発するレーザ光である。Figure 3 is a top view of a conventional lens-equipped semiconductor laser;
The figure is a sectional view taken along lines U and -H shown in FIG. 3. In the figure, (1) is the substrate crystal, (2) is the semiconductor laser, (8
) is a lens made of semiconductor, (4) is a stripe that is an oscillation region, (6) is a first cladding layer, L6) is an active layer, (
A) is the second cladding layer, and (8) is the laser light emitted from the stripe (4) region.
次に、動作について説明する。半導体レーザ（２）のス
トライプ（４）において、第１クラッド層（６）および
第２クラッド層（７）を介して活性層（６）に電流を注
入すると、ストライプ（４）よりレーザ光（８）が出射
される。レーザ光（８）は半導体レーザ（２）と同一の
基板結晶（１）上に形成されたレンズ（８）を通して所
定のビーム形状に整形式れた後、外部へと伝搬する。Next, the operation will be explained. In the stripe (4) of the semiconductor laser (2), when a current is injected into the active layer (6) through the first cladding layer (6) and the second cladding layer (7), the laser light (8) flows from the stripe (4). ) is emitted. The laser light (8) is shaped into a predetermined beam shape through a lens (8) formed on the same substrate crystal (1) as the semiconductor laser (2), and then propagates to the outside.
従来のレンズ付半導体レーザは以上のように構成されて
いるので、レーザ光は、レンズ内で、活性層を必ず通過
し、同領域で光吸収を受は光量が減少するという問題点
があった。これを解決するには、レンズ内の活性層に一
定電流を加えて光吸収をなくする方法が有効であるが、
同方法では上記一定電流を確保するための回路を必要と
し実用的でないｎｔた、半導体レーザとレンズの半導体
層をまったく別々に形成し、レンズに活性層を含まない
ようにすることもできるが、製造工程が複雑になる。Conventional lens-equipped semiconductor lasers are configured as described above, so the laser light always passes through the active layer within the lens, and if light is absorbed in the same region, the amount of light decreases. . An effective way to solve this problem is to apply a constant current to the active layer within the lens to eliminate light absorption.
This method requires a circuit to ensure the above-mentioned constant current and is not practical.Also, it is also possible to form the semiconductor layers of the semiconductor laser and the lens completely separately so that the lens does not include an active layer. The manufacturing process becomes complicated.
この発明は上記のような問題点を解消するためになされ
たもので、一定の電流を原爆ずとも光吸収のおこらない
半導体レンズを備え九半導体レーザを容易に得ることを
目的とする。This invention has been made to solve the above-mentioned problems, and its object is to easily obtain a semiconductor laser equipped with a semiconductor lens that does not absorb light even when a constant current is applied to it.
この発明に係るレンズ付半導体レーザは、基板結晶表口
において、溝あるいは、テラスを形成した後、当該溝あ
るいはテラス上に半導体によるレンズを形成し、当該溝
あるいはテラス以外の領域に半導体レーザを形成したも
のである。In the lens-equipped semiconductor laser according to the present invention, a groove or terrace is formed at the surface of a substrate crystal, a semiconductor lens is formed on the groove or terrace, and a semiconductor laser is formed in a region other than the groove or terrace. This is what I did.
この発明におけるレンズ付半導体レーザにおいて基板結
晶上に設けた溝またはテラスは、半導体レーザとレンズ
の高さを調整する働きを持つ。In the lens-equipped semiconductor laser according to the present invention, the grooves or terraces provided on the substrate crystal function to adjust the heights of the semiconductor laser and the lens.
以下、この発明の一実施例を図について説明する。第１
図はレンズ付半導体レーザの上面図、第２図は第１図に
示すＡ−Ａにおける断面図である。An embodiment of the present invention will be described below with reference to the drawings. 1st
The figure is a top view of the lens-equipped semiconductor laser, and FIG. 2 is a cross-sectional view taken along line AA shown in FIG. 1.
図において、（１）〜（８）は第３図及び第４図の従来
例に示したものと同等であるので説明を省略する。In the figure, (1) to (8) are the same as those shown in the conventional example of FIGS. 3 and 4, and therefore their explanation will be omitted.
（９）は基板結晶（１）上にあらかじめ設けられた溝で
ある。(9) is a groove provided in advance on the substrate crystal (1).
次いで動作について説明する。基板結晶（１）にはあら
かじめ溝（９）が形成されているので、基板結晶（１）
上に順次第１クラッド層（６：、活性層（６）、第２ク
ラッド層（γ）を形成して、溝（９）上にレンズ（８１
１溝（９）以外の部分上に半導体レーザＣ２）を作れば
、レンズ（８１の活性層（６１を半導体レーザ（２」の
活性層（６）より低い位置に形成でき、半導体レーザ（
２）より出射されたレーザ光（８）は、レンズ傳１内で
、活性層（６）を通過することなく第２クラッド層（γ
）を通過して外部へ取り出嘔れ、光吸収を受けずにビー
ム整形できる。Next, the operation will be explained. Since the substrate crystal (1) has grooves (9) formed in advance, the substrate crystal (1)
A first cladding layer (6), an active layer (6), and a second cladding layer (γ) are sequentially formed on the groove (9), and a lens (81) is formed on the groove (9).
If the semiconductor laser C2) is formed on the part other than the first groove (9), the active layer (61 of the lens (81) can be formed at a lower position than the active layer (6) of the semiconductor laser (2), and the semiconductor laser (
2) The laser beam (8) emitted from the lens chamber 1 passes through the second cladding layer (γ) without passing through the active layer (6).
) and exit to the outside, allowing beam shaping without light absorption.
なお上記実施例では基板結晶（１）に溝（９）を設けた
ものについて説明したが、溝（９）の代りにテラスを設
けてレンズ（８１と半導体レーザ（２）の活性層＋６１
の高さをずらしてもよい、ｔた、上記のように溝（９）
を用いて半導体レーザ（２）の出射光がレンズ（８）の
第２クラッド層（７）全通過するようにし次場合には、
垂直方向にもビーム整形できるように第２クラッド層（
γ）を所定の屈折率と膜厚を有する多層の半導体層によ
り形成しても良い。テラスを用い次場合も、第１クラッ
ド層（６）を所定の屈折率と膜厚を有する多層の半導体
層により形成することで、同様の効果が得られる。In the above embodiment, a groove (9) was provided in the substrate crystal (1), but instead of the groove (9), a terrace was provided to form a lens (81) and an active layer +61 of the semiconductor laser (2).
The height of the groove (9) may be varied as described above.
In the following case, the emitted light of the semiconductor laser (2) passes through the entire second cladding layer (7) of the lens (8) using
A second cladding layer (
γ) may be formed from multiple semiconductor layers having a predetermined refractive index and film thickness. Even when a terrace is used, the same effect can be obtained by forming the first cladding layer (6) from a multilayer semiconductor layer having a predetermined refractive index and film thickness.
以上のように、この発明によれば、基板結晶上に溝また
はテラスを形成し、その上に半導体のレンズを形成する
ように構成したので、高性能な半導体レーザが容易に得
られる効果がある。As described above, according to the present invention, since the grooves or terraces are formed on the substrate crystal and the semiconductor lens is formed on the grooves or terraces, a high-performance semiconductor laser can be easily obtained. .
第１図はこの発明の一実施例によるレンズ付半導体レー
ザの上面図、第２図は第１図に示すＡ・Ａにおける断面
図である。第３図は従来のレンズ付半導体レーザの上面
図、第４図は第３図に示すＢ−Ｂにおける断面図である
。図において、（１）は基板結晶、（２）は半導体レー
ザ、（８）はレンズ、（４）はストライプ、（６）は第
１クラッド層、（６）は活性層、（γ）は第２クラッド
層、（８）はレーザ光、（９）は溝である。
なお、図中、同一符号は同一 又は相当部分を示す。FIG. 1 is a top view of a lens-equipped semiconductor laser according to an embodiment of the present invention, and FIG. 2 is a cross-sectional view taken along line A-A shown in FIG. FIG. 3 is a top view of a conventional lens-equipped semiconductor laser, and FIG. 4 is a cross-sectional view taken along line BB shown in FIG. In the figure, (1) is the substrate crystal, (2) is the semiconductor laser, (8) is the lens, (4) is the stripe, (6) is the first cladding layer, (6) is the active layer, and (γ) is the first cladding layer. 2 cladding layers, (8) is a laser beam, and (9) is a groove. In addition, the same symbols in the figures indicate the same or equivalent parts.
Claims (1)
いはテラスの上に半導体レンズを形成し、当該溝あるい
はテラス以外の領域に半導体レーザを形成したことを特
徴とするレンズ付半導体レーザ。A semiconductor laser with a lens, characterized in that a groove or terrace is formed on the surface of a substrate crystal, a semiconductor lens is formed on the groove or terrace, and a semiconductor laser is formed in a region other than the groove or terrace.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1329905A JP2737329B2 (en) | 1989-12-19 | 1989-12-19 | Semiconductor laser with lens |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1329905A JP2737329B2 (en) | 1989-12-19 | 1989-12-19 | Semiconductor laser with lens |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03190180A true JPH03190180A (en) | 1991-08-20 |
| JP2737329B2 JP2737329B2 (en) | 1998-04-08 |
Family
ID=18226573
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1329905A Expired - Lifetime JP2737329B2 (en) | 1989-12-19 | 1989-12-19 | Semiconductor laser with lens |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2737329B2 (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63200591A (en) * | 1987-02-17 | 1988-08-18 | Matsushita Electric Ind Co Ltd | Semiconductor laser device and manufacture thereof |
-
1989
- 1989-12-19 JP JP1329905A patent/JP2737329B2/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63200591A (en) * | 1987-02-17 | 1988-08-18 | Matsushita Electric Ind Co Ltd | Semiconductor laser device and manufacture thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2737329B2 (en) | 1998-04-08 |
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