JPS62219684A - Distributed feedback type semiconductor laser - Google Patents
Distributed feedback type semiconductor laserInfo
- Publication number
- JPS62219684A JPS62219684A JP61060976A JP6097686A JPS62219684A JP S62219684 A JPS62219684 A JP S62219684A JP 61060976 A JP61060976 A JP 61060976A JP 6097686 A JP6097686 A JP 6097686A JP S62219684 A JPS62219684 A JP S62219684A
- Authority
- JP
- Japan
- Prior art keywords
- corrugation
- optical reflecting
- reflecting film
- semiconductor laser
- reflection film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 19
- 230000003287 optical effect Effects 0.000 abstract description 9
- 239000000758 substrate Substances 0.000 abstract description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052681 coesite Inorganic materials 0.000 abstract description 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 2
- 239000000377 silicon dioxide Substances 0.000 abstract description 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 2
- 229910052682 stishovite Inorganic materials 0.000 abstract description 2
- 229910052905 tridymite Inorganic materials 0.000 abstract description 2
- 238000007493 shaping process Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 description 6
- 230000008878 coupling Effects 0.000 description 5
- 238000010168 coupling process Methods 0.000 description 5
- 238000005859 coupling reaction Methods 0.000 description 5
- 238000005253 cladding Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000969 carrier Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
Abstract
Description
【発明の詳細な説明】
〔概要〕
本発明は、分布帰還型半導体レーザに於いて、コルゲー
ションをレーザ光の出射側から共振器長方向に向かって
部分的に形成し、また、線光が出射される面及びその反
対の面に光反射膜を形成することに依り、コルゲーショ
ンを全共振器長に亙って形成した従来の分布帰還型半導
体レーザと同様に低しきい値であると共にそれに比較し
て高効率であり、しかも、コルゲーションは形成容易な
深さにしてもに（結合係数）が十分に小さくなり、特に
、浅くする必要がないようにしたものである。[Detailed Description of the Invention] [Summary] The present invention provides a distributed feedback semiconductor laser in which corrugation is partially formed from the laser beam emission side toward the resonator length direction, and in which linear light is emitted. By forming a light-reflecting film on the exposed surface and the opposite surface, the threshold value is as low as that of a conventional distributed feedback semiconductor laser in which corrugation is formed over the entire cavity length, and compared to that. Moreover, even if the corrugation is made to a depth that is easy to form, the coupling coefficient is sufficiently small, so there is no need to make it particularly shallow.
本発明は、特に高効率且つ低しきい値の分布帰還（ｄｉ
ｓｔｒｉｂｕｔｅｄ ｆｅｅｄｂａｃｋ：ＤＦＢ）型
半導体レーザに関する。The present invention particularly provides high efficiency and low threshold distributed feedback (di
The present invention relates to a distributed feedback (DFB) type semiconductor laser.
従来、ＤＦＢ型半導体レーザに於いて、後面に高光反射
膜を、また、前面に低光反射膜を形成して高効率化した
ものが知られている。BACKGROUND ART Conventionally, a DFB type semiconductor laser is known to have high efficiency by forming a high light reflection film on the rear surface and a low light reflection film on the front surface.
斯かる構造のＤＦＢ型半導体レーザでは、光出力を高効
率にする為、にＬ（結合係数・共振器長積）を０．５以
下にする必要があり、従って、共振器長を短く、即ち、
短共振器化したり、コルゲーション（ｃｏｒｒｕｇａｔ
ｉｏｎ）深さを浅くするなどしてにＬを小さくすること
が行われている。In a DFB type semiconductor laser having such a structure, in order to make the optical output highly efficient, it is necessary to make L (coupling coefficient/resonator length product) 0.5 or less. ,
Short resonator or corrugation
ion) L is being reduced by making the depth shallower.
前記のように、接合係数にを小さくする為、例えば雑兵
振器化した場合、当然ではあるが、キャリヤ量が少なく
なって最大出力は低下し、また、コルゲーションを浅く
する場合、例えば、１００〜１５０〔人〕程度の深さに
形成することで達成されるが、その程度の深さにコルゲ
ーションを形成するのは再現性が非常に悪くなる旨の欠
点がある。As mentioned above, in order to reduce the joining coefficient, for example, when using a general oscillator, the amount of carriers naturally decreases and the maximum output decreases, and when the corrugation is made shallow, for example, This can be achieved by forming corrugations to a depth of about 150 [people], but forming corrugations to such a depth has the drawback that reproducibility is extremely poor.
本発明は、後面に高光反射膜を、また、前面に低光反射
膜を形成した高効率のＤＦＢ型半導体レーザに於いて、
共振器長を長く採ることができる構成にし、最大出力を
向上すると共に高効率且つ低しきい値であるように、そ
して、コルゲーションは再現性が良好な深さ、例えば、
３００〔人〕程度を採用できるようにする。The present invention provides a highly efficient DFB type semiconductor laser in which a high light reflection film is formed on the rear surface and a low light reflection film is formed on the front surface.
The configuration allows for a long resonator length, improving maximum output, high efficiency, and low threshold, and the corrugations are set to a depth with good reproducibility, e.g.
We will be able to employ around 300 people.
本発明では、ＤＦＢ型半導体レーザに於いて、コルゲー
ションを共振器長の全長に亙って形成したものと、コル
ゲーションを共振器長の半分に亙って形成し且つ前記の
ように高光反射膜を形成したものとを比較すると低しき
い値化の点では全く変わりないこと、また、ＤＦＢ型半
導体レーザに於いて、内部に光が貯溜される量が多いほ
ど光を外に取り出すことができる効率が低下するので、
その意味からすれば、コルゲーションは存在しないか、
或いは、少ない方が好ましいこと、更にまた、浅い、例
えば１５０〔人〕程度のコルゲーションを全共振器長に
亙り形成したものと、深い、例えば３００〔人〕程度の
コルゲーションを全共振器長の半分に亙り形成したもの
とを比較するとにＬは同程度に小さいことなどの知見が
基礎になっている。In the present invention, there are two types of DFB semiconductor lasers: one in which corrugation is formed over the entire length of the resonator, and the other in which corrugation is formed over half of the resonator length and a high light reflection film is applied as described above. Comparing with the newly formed one, there is no difference in terms of lower threshold value, and in a DFB type semiconductor laser, the more light is stored inside, the more efficient it is at extracting the light. decreases, so
In that sense, corrugation does not exist, or
Or, it is better to have fewer corrugations.Furthermore, a shallow corrugation of, for example, about 150 [people] is formed over the entire resonator length, and a deep corrugation, for example, about 300 [people], is formed over half the total resonator length. This is based on the knowledge that when compared with those formed over the years, L is similarly small.
そこで、本発明に依る分布帰還型半導体レーザに於いて
は、レーザ光が出射される側の面に形成された低光反射
膜（例えば低光反射膜７）と、該低光反射膜が形成され
た面と反対側の面に形成された高光反射膜（例えば高光
反射膜６）と、前記低光反射膜が形成された面から共振
器長方向の一部に亙って形成されたコルゲーション（例
えばコルゲーション２）とを有してなる構成にした。Therefore, in the distributed feedback semiconductor laser according to the present invention, a low light reflection film (for example, low light reflection film 7) formed on the side from which laser light is emitted, and a low light reflection film formed a high light reflection film (for example, high light reflection film 6) formed on the surface opposite to the surface where the low light reflection film is formed, and a corrugation formed over a part of the resonator length direction from the surface on which the low light reflection film is formed. (for example, corrugation 2).
このような手段を採ることに依り、コルゲーションを全
共振器長に亙って形成した従来の分布帰還型半導体レー
ザと同様に低しきい値であると共にそれに比較しコルゲ
ーションが少ないことから高効率であり、しかも、コル
ゲーションは形成容易であるような深さにしてもにＬを
十分に小さくすることが可能であり、従って、製造困難
であるにも拘わらず、にを小さくする為に浅くするなど
の必要はなくなる。By adopting such a method, the threshold value is as low as that of the conventional distributed feedback semiconductor laser in which corrugations are formed over the entire resonator length, and the efficiency is high because there are fewer corrugations compared to the conventional distributed feedback semiconductor laser. Moreover, it is possible to make L sufficiently small even if the corrugation is made to a depth that is easy to form. Therefore, even though it is difficult to manufacture, it is possible to make L shallow enough to make L small. There will be no need for.
図は本発明一実施例の要部切断側面図を表している。 The figure shows a cutaway side view of essential parts of an embodiment of the present invention.
図に於いて、１は半導体基板、２は基板１の表面一部に
形成されたコルゲーション（ｃｏｒｒｕｇａｔｉｏｎ）
、３は光ガイド層、４は活性層、５はクラッド層、６は
高光反射膜、７は低光反射膜、Ｌｌは共振器の長さ、Ｌ
２はコルゲーションの長さ、ｇはコルゲーションの深さ
をそれぞれ示している。In the figure, 1 is a semiconductor substrate, and 2 is a corrugation formed on a part of the surface of the substrate 1.
, 3 is a light guide layer, 4 is an active layer, 5 is a cladding layer, 6 is a high light reflection film, 7 is a low light reflection film, Ll is the length of the resonator, L
2 indicates the length of the corrugation, and g indicates the depth of the corrugation.
ここで、前記各部分の主要データを例示すると次の通り
である。Here, examples of the main data of each part are as follows.
（１１半導体基板１について
材料：ＩｎＰ
（２） コルゲーション２について
長さＬ２：５０〜１５０ （、ｕｎ）程度深さｇ：３０
０ Ｃ人〕
結合係数に： ３０ （ｃｓ−’）程度（３）光ガイド
層３について
材料：ＩｎＧａＡｓＰ
厚さ：０．１５Ｃμｍ〕
導電型：ｎ型
不純物濃度ｊ ５ Ｘ １０１７（ｃｍ−”）（４）活
性層４について
材料：ＩｎＧａＡｓｐ
厚さ：０．１５（μｍ〕
（５） クラッド層５について
材料： ＩｎＰ
厚さ：３ 〔μｍ〕
導電型：ｎ型
不純物濃度： ｌ ｘ ｌ ＱＩＢ（ｃａｂ−’）（６
）高光反射膜６について
材料：Ａｕ膜或いはＳｉ及びＳ ｉ Ｏ２多層膜厚さ：
例えば０．４〔μｍ〕程度
（７）低光反射膜７について
材料：ＳｉＮ
厚さ：例えば０．２〔μｍ〕程度
尚、共振器の長さＬｌは〜３００〔μｍ〕、有効結合係
数・共振器長積にＬｅｆｔは０６５となるようにしであ
る。(11 For semiconductor substrate 1 Material: InP (2) For corrugation 2 Length L2: about 50 to 150 (,un) Depth g: 30
0 C person] Coupling coefficient: about 30 (cs-') (3) About the light guide layer 3 Material: InGaAsP Thickness: 0.15 C μm] Conductivity type: n-type impurity concentration j 5 x 1017 (cm-'') ( 4) Material for active layer 4: InGaAsp Thickness: 0.15 (μm) (5) Material for cladding layer 5: InP Thickness: 3 [μm] Conductivity type: n-type Impurity concentration: l x l QIB (cab- ')(6
) Regarding the high light reflection film 6 Material: Au film or Si and SiO2 multilayer film Thickness:
For example, about 0.4 [μm] (7) Regarding the low light reflection film 7 Material: SiN Thickness: For example, about 0.2 [μm] Note that the length Ll of the resonator is ~300 [μm], and the effective coupling coefficient Left is set to 065 in the resonator length product.
図から明らかなように、本実施例では、コルゲーション
２が共振器の前面側、即ち、低光反射膜７を形成した側
から共振器長方向に向かって部分的に形成されている。As is clear from the figure, in this embodiment, the corrugation 2 is partially formed from the front side of the resonator, that is, from the side on which the low light reflection film 7 is formed, toward the length direction of the resonator.
本発明に依る分布帰還型半導体レーザに於いては、コル
ゲーションをレーザ光の出射側から共振器長方向に向か
って部分的に形成し、また、眩光が出射される面及びそ
の反対の面に光反射膜を形成した構成になっている。In the distributed feedback semiconductor laser according to the present invention, corrugation is partially formed from the laser beam emission side toward the cavity length direction, and the dazzling light is emitted from the surface and the surface opposite thereto. It has a configuration in which a reflective film is formed.
このような構成を採ることに依り、コルゲーションを全
共振器長に亙って形成した従来の分布帰還型半導体レー
ザと同様に低しきい値であると共にそれに比較しコルゲ
ーションが少ないことがら高効率であり、しかも、コル
ゲーションは形成容易であるような深さとし且つ共振器
長と結合係数を変えることなく有効にＬを十分に低下さ
せることが可能であり、従って、製造困難であるにも拘
わらず、にを小さくする為に浅くするなどの必要はなく
、また、共振器は所謂雑兵振器化されていないので出力
は大である。By adopting this configuration, it has a low threshold value similar to the conventional distributed feedback semiconductor laser in which corrugations are formed over the entire cavity length, and has high efficiency because there are fewer corrugations compared to that. Moreover, the corrugation can be formed to a depth that is easy to form, and it is possible to effectively lower L sufficiently without changing the resonator length and the coupling coefficient. Therefore, although it is difficult to manufacture, There is no need to make the resonator shallower in order to make it smaller, and since the resonator is not a so-called general purpose resonator, the output is large.
図は本発明一実施例の要部切断側面図を表している。
図に於いて、１は半導体基板、２は基板１の表面一部に
形成されたコルゲーション、３は光ガイド層、４は活性
層、５はクラッド層、６は高光反射膜、７は低光反射膜
、Ｌｌは共振器の長さ、Ｌ２はコルゲーションの長さ、
ｇはコルゲーションの深さをそれぞれ示している。The figure shows a cutaway side view of essential parts of an embodiment of the present invention. In the figure, 1 is a semiconductor substrate, 2 is a corrugation formed on a part of the surface of the substrate 1, 3 is a light guide layer, 4 is an active layer, 5 is a cladding layer, 6 is a high light reflection film, and 7 is a low light reflection film. Reflection film, Ll is the length of the resonator, L2 is the length of the corrugation,
g indicates the depth of corrugation.
Claims (1)
、 該低光反射膜が形成された面と反対側の面に形成された
高光反射膜と、 前記低光反射膜が形成された面から共振器長方向に向か
って部分的に形成されたコルゲーションと を有してなることを特徴とする分布帰還型半導体レーザ
。[Scope of Claims] A low light reflection film formed on the surface from which the laser beam is emitted; a high light reflection film formed on the surface opposite to the surface on which the low light reflection film is formed; 1. A distributed feedback semiconductor laser comprising a corrugation partially formed in a cavity length direction from a surface on which a low light reflection film is formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61060976A JPS62219684A (en) | 1986-03-20 | 1986-03-20 | Distributed feedback type semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61060976A JPS62219684A (en) | 1986-03-20 | 1986-03-20 | Distributed feedback type semiconductor laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62219684A true JPS62219684A (en) | 1987-09-26 |
Family
ID=13157962
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61060976A Pending JPS62219684A (en) | 1986-03-20 | 1986-03-20 | Distributed feedback type semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62219684A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5469459A (en) * | 1993-01-08 | 1995-11-21 | Nec Corporation | Laser diode element with excellent intermodulation distortion characteristic |
| EP1039598A2 (en) * | 1999-03-24 | 2000-09-27 | NEC Corporation | Distributed feedback semiconductor laser |
| JP2003283046A (en) * | 2002-03-22 | 2003-10-03 | Sumitomo Electric Ind Ltd | Semiconductor laser element |
| JP2003283049A (en) * | 2002-03-20 | 2003-10-03 | Sumitomo Electric Ind Ltd | Semiconductor laser element |
| CN112799158A (en) * | 2021-01-27 | 2021-05-14 | 福州大学 | Quasi-resonant cavity light extraction structure based on optical waveguide |
-
1986
- 1986-03-20 JP JP61060976A patent/JPS62219684A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5469459A (en) * | 1993-01-08 | 1995-11-21 | Nec Corporation | Laser diode element with excellent intermodulation distortion characteristic |
| US5568505A (en) * | 1993-01-08 | 1996-10-22 | Nec Corporation | Laser diode element with excellent intermodulation distortion characteristic |
| EP0753914A2 (en) * | 1993-01-08 | 1997-01-15 | Nec Corporation | Laser diode element with excellent intermodulation distortion characteristic |
| EP0753914A3 (en) * | 1993-01-08 | 1997-04-02 | Nec Corp | Laser diode element with excellent intermodulation distortion characteristic |
| EP1039598A2 (en) * | 1999-03-24 | 2000-09-27 | NEC Corporation | Distributed feedback semiconductor laser |
| EP1039598A3 (en) * | 1999-03-24 | 2004-01-21 | NEC Corporation | Distributed feedback semiconductor laser |
| JP2003283049A (en) * | 2002-03-20 | 2003-10-03 | Sumitomo Electric Ind Ltd | Semiconductor laser element |
| JP2003283046A (en) * | 2002-03-22 | 2003-10-03 | Sumitomo Electric Ind Ltd | Semiconductor laser element |
| CN112799158A (en) * | 2021-01-27 | 2021-05-14 | 福州大学 | Quasi-resonant cavity light extraction structure based on optical waveguide |
| CN112799158B (en) * | 2021-01-27 | 2022-04-08 | 福州大学 | Quasi-resonant cavity light extraction structure based on optical waveguide |
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