JPS631370U - - Google Patents
Info
- Publication number
- JPS631370U JPS631370U JP9480286U JP9480286U JPS631370U JP S631370 U JPS631370 U JP S631370U JP 9480286 U JP9480286 U JP 9480286U JP 9480286 U JP9480286 U JP 9480286U JP S631370 U JPS631370 U JP S631370U
- Authority
- JP
- Japan
- Prior art keywords
- layer
- light emitting
- refractive index
- center
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims 2
- 230000010355 oscillation Effects 0.000 claims 1
- 238000005253 cladding Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
Description
第１図ａ〜ｄは本考案の実施例装置の製造を示
す工程別断面図、第２図は本実施例におけるレン
ズ領域のレンズ効果を説明するための模式図、第
３図は従来例を示す斜視図である。
１２…第１クラツド層、１３…活性層、１…光
ガイド層、１７…第２クラツド層、１９…第１収
束層、２０…第２収束層、２１…第３収束層。
1A to 1D are cross-sectional views showing the manufacturing process of an embodiment of the present invention; FIG. 2 is a schematic diagram for explaining the lens effect of the lens region in this embodiment; and FIG. FIG. DESCRIPTION OF SYMBOLS 12... First cladding layer, 13... Active layer, 1... Light guide layer, 17... Second cladding layer, 19... First focusing layer, 20... Second focusing layer, 21... Third focusing layer.
Claims (1)
て中心部の等価屈折率が最小となる半導体層から
なる収束領域を設けたことを特徴とする半導体レ
ーザ装置。 A semiconductor laser device characterized in that a convergence region made of a semiconductor layer having a minimum equivalent refractive index at the center is provided adjacent to a laser light emitting surface of a distributed feedback type oscillation layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9480286U JPS631370U (en) | 1986-06-20 | 1986-06-20 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9480286U JPS631370U (en) | 1986-06-20 | 1986-06-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS631370U true JPS631370U (en) | 1988-01-07 |
Family
ID=30958631
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9480286U Pending JPS631370U (en) | 1986-06-20 | 1986-06-20 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS631370U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003038956A1 (en) * | 2001-10-29 | 2003-05-08 | Matsushita Electric Industrial Co., Ltd. | Production method for semiconductor light emitting element |
-
1986
- 1986-06-20 JP JP9480286U patent/JPS631370U/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003038956A1 (en) * | 2001-10-29 | 2003-05-08 | Matsushita Electric Industrial Co., Ltd. | Production method for semiconductor light emitting element |