JPH0313760U - - Google Patents
Info
- Publication number
- JPH0313760U JPH0313760U JP7431189U JP7431189U JPH0313760U JP H0313760 U JPH0313760 U JP H0313760U JP 7431189 U JP7431189 U JP 7431189U JP 7431189 U JP7431189 U JP 7431189U JP H0313760 U JPH0313760 U JP H0313760U
- Authority
- JP
- Japan
- Prior art keywords
- layer
- emitting diode
- light emitting
- light
- utility
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000031700 light absorption Effects 0.000 claims description 3
- 238000005253 cladding Methods 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 240000002329 Inga feuillei Species 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
Description
第１図は本考案の一実施例による発光ダイオー
ドの構成図、第２図は本実施例におけるＩｎＧａ
ＡｓＰ光吸収層の吸収特性図、第３図は本実施例
における発光ダイオードの光スペクトル特性図、
第４図は従来の発光ダイオードの構成図、第５図
は従来の発光ダイオードの光スペクトル特性図で
ある。
図において、３……ｎ−ＩｎＰ基板、４……ｎ
−ＩｎＧａＡｓＰ光吸収層、５……ｎ−ＩｎＰク
ラツド層、６……ＩｎＧａＡｓＰ活性層である。
なお、各図中同一符号は同一又は相当部分を示す
。
Fig. 1 is a block diagram of a light emitting diode according to an embodiment of the present invention, and Fig. 2 is an InGa diode according to the embodiment.
An absorption characteristic diagram of the AsP light absorption layer, FIG. 3 is an optical spectrum characteristic diagram of the light emitting diode in this example,
FIG. 4 is a configuration diagram of a conventional light emitting diode, and FIG. 5 is a diagram of optical spectrum characteristics of the conventional light emitting diode. In the figure, 3...n-InP substrate, 4...n
-InGaAsP light absorption layer, 5... n-InP cladding layer, 6... InGaAsP active layer.
Note that the same reference numerals in each figure indicate the same or corresponding parts.
Claims (1)
おいて、活性層上に順次積層されたクラツド層と
基板層間に特定の波長の光を吸収する光吸収層を
設けたことを特徴とする発光ダイオード。 A light emitting diode having a double heterojunction structure, characterized in that a light absorption layer that absorbs light of a specific wavelength is provided between a cladding layer and a substrate layer that are sequentially laminated on an active layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7431189U JPH0313760U (en) | 1989-06-23 | 1989-06-23 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7431189U JPH0313760U (en) | 1989-06-23 | 1989-06-23 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0313760U true JPH0313760U (en) | 1991-02-12 |
Family
ID=31613892
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7431189U Pending JPH0313760U (en) | 1989-06-23 | 1989-06-23 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0313760U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006108350A (en) * | 2004-10-05 | 2006-04-20 | Stanley Electric Co Ltd | Semiconductor light emitting device |
-
1989
- 1989-06-23 JP JP7431189U patent/JPH0313760U/ja active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006108350A (en) * | 2004-10-05 | 2006-04-20 | Stanley Electric Co Ltd | Semiconductor light emitting device |
| US7880187B2 (en) | 2004-10-05 | 2011-02-01 | Stanley Electric Co., Ltd. | Semiconductor light emitting device having narrow radiation spectrum |