JPS6166963U - - Google Patents
Info
- Publication number
- JPS6166963U JPS6166963U JP15162584U JP15162584U JPS6166963U JP S6166963 U JPS6166963 U JP S6166963U JP 15162584 U JP15162584 U JP 15162584U JP 15162584 U JP15162584 U JP 15162584U JP S6166963 U JPS6166963 U JP S6166963U
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- refractive index
- index layers
- substrate
- multilayer film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
Description
第1図はこの考案の実施例を示す構成図、第2
図は反射多層膜の光の波長に対する反射率特性を
示すグラフ、第3図は従来例を示す構成図、第4
図は第3図の発光ダイオードのn−GaAs層基
板のかわりにn−Ga0.6Al0.4As基板
が用いられた発光ダイオードを示す構成図である
。
1…n−GaAs基板、3…Beドープp−G
a0.95Al0.05As活性層(発光層)、
10…多層膜、11…AlAs層、12…GaA
s層。
Figure 1 is a configuration diagram showing an embodiment of this invention, Figure 2
The figure is a graph showing the reflectance characteristics of a reflective multilayer film with respect to the wavelength of light, Figure 3 is a configuration diagram showing a conventional example, and Figure 4
The figure shows an n-GaAs layer substrate in the light emitting diode shown in FIG . 6 Al 0 . 4 is a configuration diagram showing a light emitting diode using an As substrate. 1...n-GaAs substrate, 3...Be-doped p-G
a0 . 95 Al 0 . 05 As active layer (light emitting layer),
10...Multilayer film, 11...AlAs layer, 12...GaA
s layer.
Claims (1)
の間に、複数の高屈折率層と低屈折率層とが交互
に積層されてなる多層膜が形成されている発光ダ
イオード。 A light emitting diode in which a multilayer film in which a plurality of high refractive index layers and low refractive index layers are alternately laminated is formed between a semiconductor substrate and a light emitting layer formed on the substrate.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15162584U JPS6166963U (en) | 1984-10-05 | 1984-10-05 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15162584U JPS6166963U (en) | 1984-10-05 | 1984-10-05 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6166963U true JPS6166963U (en) | 1986-05-08 |
Family
ID=30709732
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15162584U Pending JPS6166963U (en) | 1984-10-05 | 1984-10-05 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6166963U (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0220076A (en) * | 1988-07-08 | 1990-01-23 | Mitsubishi Kasei Corp | Compound-semiconductor light emitting device |
-
1984
- 1984-10-05 JP JP15162584U patent/JPS6166963U/ja active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0220076A (en) * | 1988-07-08 | 1990-01-23 | Mitsubishi Kasei Corp | Compound-semiconductor light emitting device |
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