JPS6166963U - - Google Patents

Info

Publication number
JPS6166963U
JPS6166963U JP15162584U JP15162584U JPS6166963U JP S6166963 U JPS6166963 U JP S6166963U JP 15162584 U JP15162584 U JP 15162584U JP 15162584 U JP15162584 U JP 15162584U JP S6166963 U JPS6166963 U JP S6166963U
Authority
JP
Japan
Prior art keywords
light emitting
refractive index
index layers
substrate
multilayer film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15162584U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP15162584U priority Critical patent/JPS6166963U/ja
Publication of JPS6166963U publication Critical patent/JPS6166963U/ja
Pending legal-status Critical Current

Links

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図はこの考案の実施例を示す構成図、第2
図は反射多層膜の光の波長に対する反射率特性を
示すグラフ、第3図は従来例を示す構成図、第4
図は第3図の発光ダイオードのn−GaAs層基
板のかわりにn−GaAlAs基板
が用いられた発光ダイオードを示す構成図である
。 1…n−GaAs基板、3…Beドープp−G
95Al05As活性層(発光層)、
10…多層膜、11…AlAs層、12…GaA
s層。
Figure 1 is a configuration diagram showing an embodiment of this invention, Figure 2
The figure is a graph showing the reflectance characteristics of a reflective multilayer film with respect to the wavelength of light, Figure 3 is a configuration diagram showing a conventional example, and Figure 4
The figure shows an n-GaAs layer substrate in the light emitting diode shown in FIG . 6 Al 0 . 4 is a configuration diagram showing a light emitting diode using an As substrate. 1...n-GaAs substrate, 3...Be-doped p-G
a0 . 95 Al 0 . 05 As active layer (light emitting layer),
10...Multilayer film, 11...AlAs layer, 12...GaA
s layer.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 半導体基板とこの基板上に形成された発光層と
の間に、複数の高屈折率層と低屈折率層とが交互
に積層されてなる多層膜が形成されている発光ダ
イオード。
A light emitting diode in which a multilayer film in which a plurality of high refractive index layers and low refractive index layers are alternately laminated is formed between a semiconductor substrate and a light emitting layer formed on the substrate.
JP15162584U 1984-10-05 1984-10-05 Pending JPS6166963U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15162584U JPS6166963U (en) 1984-10-05 1984-10-05

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15162584U JPS6166963U (en) 1984-10-05 1984-10-05

Publications (1)

Publication Number Publication Date
JPS6166963U true JPS6166963U (en) 1986-05-08

Family

ID=30709732

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15162584U Pending JPS6166963U (en) 1984-10-05 1984-10-05

Country Status (1)

Country Link
JP (1) JPS6166963U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0220076A (en) * 1988-07-08 1990-01-23 Mitsubishi Kasei Corp Compound-semiconductor light emitting device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0220076A (en) * 1988-07-08 1990-01-23 Mitsubishi Kasei Corp Compound-semiconductor light emitting device

Similar Documents

Publication Publication Date Title
JPS6144866U (en) semiconductor laser diode
JPS6166963U (en)
JPH0313760U (en)
JPS6350155U (en)
JPH0669106B2 (en) LED element
JPH0369895U (en)
JPH0217701U (en)
JPS6315077U (en)
JPS63164264U (en)
JPS6210459U (en)
JPS63184597U (en)
JPS62154670U (en)
JPS58162660U (en) Photoelectric conversion semiconductor device
JPH042055U (en)
JPH025125U (en)
JPH01181131U (en)
JPH0247067U (en)
JPS63178359U (en)
JPH0185644U (en)
JPS60172354U (en) semiconductor laser
JPS6249252U (en)
JPS6434795U (en)
JPH0384147U (en)
JPH01165926U (en)
JPS62152469U (en)