JPS6210459U - - Google Patents
Info
- Publication number
- JPS6210459U JPS6210459U JP10073285U JP10073285U JPS6210459U JP S6210459 U JPS6210459 U JP S6210459U JP 10073285 U JP10073285 U JP 10073285U JP 10073285 U JP10073285 U JP 10073285U JP S6210459 U JPS6210459 U JP S6210459U
- Authority
- JP
- Japan
- Prior art keywords
- layer made
- yalyas
- type
- arranged adjacent
- active layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005253 cladding Methods 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims 1
Description
第1図は本考案の実施例を示す断面図、第2図
は従来例を示す断面図である。
14,17…第1、第2クラツド層、15…ブ
ロツク層、16…活性層。
FIG. 1 is a sectional view showing an embodiment of the present invention, and FIG. 2 is a sectional view showing a conventional example. 14, 17...first and second cladding layers, 15...block layer, 16...active layer.
Claims (1)
らなる活性層、該活性層の一主面に隣接配置され
たノンドープGa1―yAlyAs(y>x)か
らなるブロツク層、該ブロツク層に隣接配置され
たp型Ga1―yAlyAsからなる第1クラツ
ド層、上記活性層の他の主面に隣接配置されたn
型Ga1―zAlzAs(z>x)からなる第2
クラツド層を備えたことを特徴とする半導体レー
ザ。 An active layer made of Ga 1 -xAlxAs (0〓 〓x<1), a block layer made of undoped Ga 1 -yAlyAs (y>x) arranged adjacent to one principal surface of the active layer, and arranged adjacent to the block layer. a first cladding layer made of p-type Ga 1 -yAlyAs;
The second type Ga 1 -zAlzAs (z>x)
A semiconductor laser characterized by having a cladding layer.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10073285U JPS6210459U (en) | 1985-07-02 | 1985-07-02 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10073285U JPS6210459U (en) | 1985-07-02 | 1985-07-02 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6210459U true JPS6210459U (en) | 1987-01-22 |
Family
ID=30970829
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10073285U Pending JPS6210459U (en) | 1985-07-02 | 1985-07-02 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6210459U (en) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58118178A (en) * | 1982-01-06 | 1983-07-14 | Nec Corp | Semiconductor light emitting element |
-
1985
- 1985-07-02 JP JP10073285U patent/JPS6210459U/ja active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58118178A (en) * | 1982-01-06 | 1983-07-14 | Nec Corp | Semiconductor light emitting element |
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