JPS62168670U - - Google Patents

Info

Publication number
JPS62168670U
JPS62168670U JP5627286U JP5627286U JPS62168670U JP S62168670 U JPS62168670 U JP S62168670U JP 5627286 U JP5627286 U JP 5627286U JP 5627286 U JP5627286 U JP 5627286U JP S62168670 U JPS62168670 U JP S62168670U
Authority
JP
Japan
Prior art keywords
semiconductor laser
view
side sectional
base
utility
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5627286U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP5627286U priority Critical patent/JPS62168670U/ja
Publication of JPS62168670U publication Critical patent/JPS62168670U/ja
Pending legal-status Critical Current

Links

Description

【図面の簡単な説明】[Brief explanation of drawings]

第1図〜第4図は本考案の実施例を示しており
、第1図は第1実施例の側断面図、第2図は第1
図の―線における断面図、第3図は第1実施
例の回路図、第4図は第2実施例の側断面図であ
る。第5図〜第7図は本考案の一従来例を示して
おり、第5図は側断面図、第6図は半導体素子の
側断面図、第7図は回路図である。 なお、図面に用いた符号において、12……レ
ーザダイオード、12a……N形半導体基板、1
2d……P形クラツド層、21……基台、22,
24……構体、である。
1 to 4 show embodiments of the present invention, FIG. 1 is a side sectional view of the first embodiment, and FIG. 2 is a side sectional view of the first embodiment.
3 is a circuit diagram of the first embodiment, and FIG. 4 is a side sectional view of the second embodiment. 5 to 7 show a conventional example of the present invention, in which FIG. 5 is a side sectional view, FIG. 6 is a side sectional view of a semiconductor element, and FIG. 7 is a circuit diagram. In addition, in the symbols used in the drawings, 12...laser diode, 12a...N-type semiconductor substrate, 1
2d... P-type cladding layer, 21... Base, 22,
24...Structure.

Claims (1)

【実用新案登録請求の範囲】 基台とは別体に形成されている構体と、 この構体に取り付けられている半導体レーザ素
子とを夫々具備する半導体レーザ装置。
[Claims for Utility Model Registration] A semiconductor laser device comprising a structure formed separately from a base and a semiconductor laser element attached to the structure.
JP5627286U 1986-04-15 1986-04-15 Pending JPS62168670U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5627286U JPS62168670U (en) 1986-04-15 1986-04-15

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5627286U JPS62168670U (en) 1986-04-15 1986-04-15

Publications (1)

Publication Number Publication Date
JPS62168670U true JPS62168670U (en) 1987-10-26

Family

ID=30884940

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5627286U Pending JPS62168670U (en) 1986-04-15 1986-04-15

Country Status (1)

Country Link
JP (1) JPS62168670U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04111774U (en) * 1991-03-14 1992-09-29 日本電気株式会社 Laser diode automatic power control circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04111774U (en) * 1991-03-14 1992-09-29 日本電気株式会社 Laser diode automatic power control circuit

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