JPS6350155U - - Google Patents
Info
- Publication number
- JPS6350155U JPS6350155U JP14441086U JP14441086U JPS6350155U JP S6350155 U JPS6350155 U JP S6350155U JP 14441086 U JP14441086 U JP 14441086U JP 14441086 U JP14441086 U JP 14441086U JP S6350155 U JPS6350155 U JP S6350155U
- Authority
- JP
- Japan
- Prior art keywords
- active layer
- cladding layers
- pair
- semiconductor laser
- emitting semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005253 cladding Methods 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims 2
- 239000000463 material Substances 0.000 claims 1
Description
第１図は本考案の実施例を示す断面図、第２図
は従来例を示す断面図である。
２２……第１クラツド層、２３……活性層、２
５，３０……第１、第２反射鏡、２７……高屈折
率層、２９……低屈折率層。
FIG. 1 is a sectional view showing an embodiment of the present invention, and FIG. 2 is a sectional view showing a conventional example. 22...first cladding layer, 23...active layer, 2
5, 30...First and second reflecting mirrors, 27...High refractive index layer, 29...Low refractive index layer.
Claims (1)
が大なる材料からなり、上記活性層を挾装する１
対のクラツド層、該両クラツド層表面に互いに対
向するように配された１対の反射鏡を有する面発
光型半導体レーザにおいて、上記クラツド層の少
なくとも１方は上記反射鏡と対向する部分の光屈
折率がその他の部分より大であることを特徴とす
る面発光型半導体レーザ。 an active layer, made of a material having a larger bandgap energy than the active layer, and sandwiching the active layer;
In a surface-emitting semiconductor laser having a pair of cladding layers and a pair of reflecting mirrors disposed on the surfaces of both cladding layers so as to face each other, at least one of the cladding layers is configured to emit light in a portion facing the reflecting mirror. A surface-emitting semiconductor laser characterized by having a higher refractive index than other parts.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1986144410U JPH0521899Y2 (en) | 1986-09-19 | 1986-09-19 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1986144410U JPH0521899Y2 (en) | 1986-09-19 | 1986-09-19 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6350155U true JPS6350155U (en) | 1988-04-05 |
| JPH0521899Y2 JPH0521899Y2 (en) | 1993-06-04 |
Family
ID=31054985
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1986144410U Expired - Lifetime JPH0521899Y2 (en) | 1986-09-19 | 1986-09-19 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0521899Y2 (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5979591A (en) * | 1982-10-29 | 1984-05-08 | Fujitsu Ltd | Semiconductor light emitting device |
-
1986
- 1986-09-19 JP JP1986144410U patent/JPH0521899Y2/ja not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5979591A (en) * | 1982-10-29 | 1984-05-08 | Fujitsu Ltd | Semiconductor light emitting device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0521899Y2 (en) | 1993-06-04 |