JPS61174765U

JPS61174765U -

Info

Publication number: JPS61174765U
Application number: JP5748685U
Authority: JP
Priority date: 1985-04-19
Filing date: 1985-04-19
Publication date: 1986-10-30

Description

[Brief explanation of the drawing]

第１図はこの考案の一実施例を示す斜視図、第
２図はこの考案の他の実施例を示す斜視図、第３
図はこの考案のさらに他の実施例を示す斜視図、
第４図は従来の電極ストライプタイプのレーザダ
イオードの構造を示す側断面図、第５図は同じく
プレーナストライプタイプのレーザダイオードの
構造を示す側断面図である。図中、９は上面電極、１２は活性層、２１はレ
ーザ光、３０は光フアイバ、４０はアライメント
マーク、５０，５１は光軸、１００は半導体レー
ザである。 Figure 1 is a perspective view showing one embodiment of this invention, Figure 2 is a perspective view showing another embodiment of this invention, and Figure 3 is a perspective view showing another embodiment of this invention.
The figure is a perspective view showing still another embodiment of this invention.
FIG. 4 is a side sectional view showing the structure of a conventional electrode stripe type laser diode, and FIG. 5 is a side sectional view showing the structure of a planar stripe type laser diode. In the figure, 9 is a top electrode, 12 is an active layer, 21 is a laser beam, 30 is an optical fiber, 40 is an alignment mark, 50 and 51 are optical axes, and 100 is a semiconductor laser.

Claims

[Scope of utility model registration request]

In an optical semiconductor that receives or emits light from an end face, an alignment mark is placed on the optical semiconductor to align the optical axis of the optical semiconductor with the optical axis of the optical waveguide when the optical semiconductor is coupled to the optical waveguide. A semiconductor device characterized in that a semiconductor device is formed on a surface.