JPS63157969U - - Google Patents
Info
- Publication number
- JPS63157969U JPS63157969U JP4920287U JP4920287U JPS63157969U JP S63157969 U JPS63157969 U JP S63157969U JP 4920287 U JP4920287 U JP 4920287U JP 4920287 U JP4920287 U JP 4920287U JP S63157969 U JPS63157969 U JP S63157969U
- Authority
- JP
- Japan
- Prior art keywords
- end surface
- laser
- semiconductor substrate
- bonded
- diode chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims 4
- 238000012544 monitoring process Methods 0.000 claims 1
- 230000003287 optical effect Effects 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 1
Description
第１図は本考案半導体レーザの第１の実施例を
示す斜視図、第２図は本考案半導体レーザの第２
の実施例を示す斜視図、第３図は第２の実施例に
係るウエハを示す斜視図、第４図は従来例を示す
概略構造図である。
符号の説明、２……レーザダイオード、５……
フオトダイオード。
FIG. 1 is a perspective view showing the first embodiment of the semiconductor laser of the present invention, and FIG. 2 is a perspective view of the second embodiment of the semiconductor laser of the present invention.
FIG. 3 is a perspective view showing a wafer according to the second embodiment, and FIG. 4 is a schematic structural diagram showing a conventional example. Explanation of symbols, 2... Laser diode, 5...
Photodiode.
Claims (1)
た位置に、レーザダイオードチツプがそのレーザ
光出射端面が半導体基板の上記一端面側を向くよ
うにボンデイングされ、 上記半導体基板の表面部の上記レーザダイオー
ドチツプがボンデイングされた位置よりも半導体
基板の上記一端面側に寄り且つ上記レーザ光の光
軸の脇にあたる位置に、モニター用フオトダイオ
ードが形成されてなる ことを特徴とする半導体レーザ。[Claims for Utility Model Registration] A laser diode chip is bonded to a position appropriately shifted inward from one end surface of the surface of the semiconductor substrate so that its laser light emitting end surface faces the one end surface of the semiconductor substrate, A monitoring photodiode is formed on the surface of the substrate at a position closer to the one end surface of the semiconductor substrate than the position where the laser diode chip is bonded and to the side of the optical axis of the laser beam. semiconductor laser.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4920287U JPS63157969U (en) | 1987-04-01 | 1987-04-01 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4920287U JPS63157969U (en) | 1987-04-01 | 1987-04-01 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63157969U true JPS63157969U (en) | 1988-10-17 |
Family
ID=30871435
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4920287U Pending JPS63157969U (en) | 1987-04-01 | 1987-04-01 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63157969U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022181542A1 (en) * | 2021-02-26 | 2022-09-01 | 京セラ株式会社 | Semiconductor device manufacturing method, semiconductor device, and semiconductor apparatus |
| WO2023153476A1 (en) * | 2022-02-10 | 2023-08-17 | 京セラ株式会社 | Light-emitting device production method and production device, and laser element substrate |
-
1987
- 1987-04-01 JP JP4920287U patent/JPS63157969U/ja active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022181542A1 (en) * | 2021-02-26 | 2022-09-01 | 京セラ株式会社 | Semiconductor device manufacturing method, semiconductor device, and semiconductor apparatus |
| WO2023153476A1 (en) * | 2022-02-10 | 2023-08-17 | 京セラ株式会社 | Light-emitting device production method and production device, and laser element substrate |
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