JPS62133224U - - Google Patents
Info
- Publication number
- JPS62133224U JPS62133224U JP1863286U JP1863286U JPS62133224U JP S62133224 U JPS62133224 U JP S62133224U JP 1863286 U JP1863286 U JP 1863286U JP 1863286 U JP1863286 U JP 1863286U JP S62133224 U JPS62133224 U JP S62133224U
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor laser
- prism
- photodetector
- planes
- plane
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Landscapes
- Optical Head (AREA)
Description
図面は本考案の一実施例を適用した光学ヘツド
を示す側面図である。
なお図面に用いた符号において、１０……半導
体レーザ装置、１１……シリコン基板、１１ａ，
１１ｂ……平面、１１ｃ……劈開面、１２，１３
……ＰＩＮフオトダイオード、１４……レーザダ
イオード、１５，１７……プリズム、２１，２５
……ビーム、である。
The drawing is a side view showing an optical head to which an embodiment of the present invention is applied. In addition, in the symbols used in the drawings, 10...semiconductor laser device, 11... silicon substrate, 11a,
11b...plane, 11c...cleavage plane, 12,13
... PIN photodiode, 14 ... Laser diode, 15, 17 ... Prism, 21, 25
...Beam.
Claims (1)
とこれら第１及び第２の平面に対して傾斜した状
態でこれら第１及び第２の平面に連なつている第
３の平面とを有する半導体基板と、 前記第１及び第２の平面に夫々形成されている
第１及び第２の光検出器と、 前記第１の光検出器上に固定されているプリズ
ムと、 前記第３の平面に固定されている半導体レーザ
とを夫々具備し、 この半導体レーザから射出され前記第２の光検
出器へ向かうビームをこの第２の光検出器で検出
して前記半導体レーザの出力を制御しつつ、 前記半導体レーザから射出され前記プリズムで
反射されるビームを照射ビームとして用いると共
に、 前記プリズムへ入射してこのプリズムを透過す
るビームを前記第１の光検出器で検出する様にし
た半導体レーザ装置。[Claims for Utility Model Registration] First and second planes that are at different levels from each other and connected to the first and second planes in a state that is inclined with respect to the first and second planes. a semiconductor substrate having a third plane; first and second photodetectors formed on the first and second planes, respectively; and a prism fixed on the first photodetector. and a semiconductor laser fixed to the third plane, and the beam emitted from the semiconductor laser and directed toward the second photodetector is detected by the second photodetector to detect the semiconductor laser. While controlling the laser output, a beam emitted from the semiconductor laser and reflected by the prism is used as an irradiation beam, and a beam that enters the prism and passes through the prism is detected by the first photodetector. A semiconductor laser device designed to
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1863286U JPS62133224U (en) | 1986-02-12 | 1986-02-12 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1863286U JPS62133224U (en) | 1986-02-12 | 1986-02-12 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62133224U true JPS62133224U (en) | 1987-08-22 |
Family
ID=30812481
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1863286U Pending JPS62133224U (en) | 1986-02-12 | 1986-02-12 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62133224U (en) |
-
1986
- 1986-02-12 JP JP1863286U patent/JPS62133224U/ja active Pending
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