JPS6232348U - - Google Patents

Info

Publication number
JPS6232348U
JPS6232348U JP12329485U JP12329485U JPS6232348U JP S6232348 U JPS6232348 U JP S6232348U JP 12329485 U JP12329485 U JP 12329485U JP 12329485 U JP12329485 U JP 12329485U JP S6232348 U JPS6232348 U JP S6232348U
Authority
JP
Japan
Prior art keywords
photoelectric conversion
semiconductor laser
circuit
area
determining
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12329485U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP12329485U priority Critical patent/JPS6232348U/ja
Publication of JPS6232348U publication Critical patent/JPS6232348U/ja
Pending legal-status Critical Current

Links

Landscapes

  • Testing Of Individual Semiconductor Devices (AREA)
  • Testing Of Optical Devices Or Fibers (AREA)

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本案装置の模式図、第2図はその要部
たる複合フオトダイオードの平面図、第3図は同
断面構造図、第4図は複合フオトダイオードの他
の実施例を示す平面図、第5,6図は従来技術の
説明図である。 1…半導体レーザ装置、2,3…複合フオトダ
イオード、21,31…大面積のフオトダイオー
ド、22,23,32,33…小面積のフオトダ
イオード、24…加算回路、25,26…比較回
路。
Fig. 1 is a schematic diagram of the proposed device, Fig. 2 is a plan view of a compound photodiode which is the main part thereof, Fig. 3 is a cross-sectional structural view of the same, and Fig. 4 is a plan view showing another embodiment of the compound photodiode. , 5 and 6 are explanatory diagrams of the prior art. DESCRIPTION OF SYMBOLS 1... Semiconductor laser device, 2, 3... Compound photodiode, 21, 31... Large area photodiode, 22, 23, 32, 33... Small area photodiode, 24... Addition circuit, 25, 26... Comparison circuit.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 半導体レーザが一方向へ発する光の一部を受光
する、1又は複数の小面積の第1光電変換素子と
、前記光の残部の殆ど総てを受光する大面積の第
2光電変換素子と、第1、第2光電変換素子の出
力の和を求める回路と、同じく差を求める回路と
を具備することを特徴とする半導体レーザの光学
特性測定装置。
one or more small-area first photoelectric conversion elements that receive a portion of the light emitted by a semiconductor laser in one direction; and a large-area second photoelectric conversion element that receives almost all of the remaining light; A device for measuring optical characteristics of a semiconductor laser, comprising a circuit for determining the sum of outputs of first and second photoelectric conversion elements, and a circuit for similarly determining the difference.
JP12329485U 1985-08-09 1985-08-09 Pending JPS6232348U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12329485U JPS6232348U (en) 1985-08-09 1985-08-09

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12329485U JPS6232348U (en) 1985-08-09 1985-08-09

Publications (1)

Publication Number Publication Date
JPS6232348U true JPS6232348U (en) 1987-02-26

Family

ID=31014264

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12329485U Pending JPS6232348U (en) 1985-08-09 1985-08-09

Country Status (1)

Country Link
JP (1) JPS6232348U (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54109461A (en) * 1978-02-15 1979-08-28 Canon Inc Testing method of directive light source
JPS6013479B2 (en) * 1978-12-20 1985-04-08 株式会社日立製作所 How to set substitute values for local output detector

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54109461A (en) * 1978-02-15 1979-08-28 Canon Inc Testing method of directive light source
JPS6013479B2 (en) * 1978-12-20 1985-04-08 株式会社日立製作所 How to set substitute values for local output detector

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