JPS61149366U - - Google Patents

Info

Publication number
JPS61149366U
JPS61149366U JP3252085U JP3252085U JPS61149366U JP S61149366 U JPS61149366 U JP S61149366U JP 3252085 U JP3252085 U JP 3252085U JP 3252085 U JP3252085 U JP 3252085U JP S61149366 U JPS61149366 U JP S61149366U
Authority
JP
Japan
Prior art keywords
light source
monitor
laser
junction diode
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3252085U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP3252085U priority Critical patent/JPS61149366U/ja
Publication of JPS61149366U publication Critical patent/JPS61149366U/ja
Pending legal-status Critical Current

Links

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本考案半導体レーザの実施の一例を示
す斜視図、第2図は本考案半導体レーザの別の実
施例を示す斜視図、第3図は第2図に示した半導
体レーザを実装した半導体レーザ装置の分解斜視
図、第4図は従来の半導体レーザの一例を示す断
面図である。 符号の説明、1……半導体基板、6……光源領
域、7……モニター光源領域、8……デテクタ領
域、。
Figure 1 is a perspective view showing an example of the implementation of the semiconductor laser of the present invention, Figure 2 is a perspective view of another example of the semiconductor laser of the invention, and Figure 3 is a mounting of the semiconductor laser shown in Figure 2. FIG. 4 is an exploded perspective view of a semiconductor laser device, and is a sectional view showing an example of a conventional semiconductor laser. Explanation of symbols: 1...Semiconductor substrate, 6...Light source area, 7...Monitor light source area, 8...Detector area.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 一つの接合ダイオードが形成された半導体基板
表面に光源領域、モニター光源領域及びデテクタ
領域が形成され、上記接合ダイオードの上記光源
領域と対応する部分が光源を成すレーザダイオー
ドとされ、上記接合ダイオードの上記モニター光
源領域と対応する部分がモニター光源を成すレー
ザダイオードとされ、上記接合ダイオードの上記
デテクタ領域と対応する部分が上記モニタ光源を
成すレーザダイオードからのモニター用レーザ光
を受光するフオトダイオードとされてなることを
特徴とする半導体レーザ。
A light source region, a monitor light source region, and a detector region are formed on the surface of a semiconductor substrate on which one junction diode is formed, and a portion of the junction diode corresponding to the light source region is a laser diode serving as a light source; A portion of the junction diode that corresponds to the monitor light source area is a laser diode serving as a monitor light source, and a portion of the junction diode that corresponds to the detector area is a photodiode that receives a monitor laser beam from the laser diode serving as the monitor light source. A semiconductor laser characterized by:
JP3252085U 1985-03-07 1985-03-07 Pending JPS61149366U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3252085U JPS61149366U (en) 1985-03-07 1985-03-07

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3252085U JPS61149366U (en) 1985-03-07 1985-03-07

Publications (1)

Publication Number Publication Date
JPS61149366U true JPS61149366U (en) 1986-09-16

Family

ID=30534110

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3252085U Pending JPS61149366U (en) 1985-03-07 1985-03-07

Country Status (1)

Country Link
JP (1) JPS61149366U (en)

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