KR860008633A - Semiconductor laser device - Google Patents

Semiconductor laser device Download PDF

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Publication number
KR860008633A
KR860008633A KR1019860003060A KR860003060A KR860008633A KR 860008633 A KR860008633 A KR 860008633A KR 1019860003060 A KR1019860003060 A KR 1019860003060A KR 860003060 A KR860003060 A KR 860003060A KR 860008633 A KR860008633 A KR 860008633A
Authority
KR
South Korea
Prior art keywords
semiconductor laser
laser device
photodetector
triangular prism
prism
Prior art date
Application number
KR1019860003060A
Other languages
Korean (ko)
Other versions
KR940011266B1 (en
Inventor
히로시 오오이노우에
아끼라 나까무라
Original Assignee
소니 가부시끼가이샤
오오가 노리오
소니 가부시끼 가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 소니 가부시끼가이샤, 오오가 노리오, 소니 가부시끼 가이샤 filed Critical 소니 가부시끼가이샤
Publication of KR860008633A publication Critical patent/KR860008633A/en
Application granted granted Critical
Publication of KR940011266B1 publication Critical patent/KR940011266B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Optical Head (AREA)
  • Semiconductor Lasers (AREA)

Abstract

내용 없음No content

Description

반도체 레이저 장치Semiconductor laser device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도 내지 제10도는 본 발명의 실시예를 도시하고 있으며,1 to 10 show an embodiment of the present invention,

제1도는 제1실시예의 측단면도,1 is a side cross-sectional view of the first embodiment,

제2도는 제1실시예의 요부의 평면도.2 is a plan view of main parts of the first embodiment;

제5도는 제3도에 표시한 광학헤드의 회로계를 도시하는 블록도.FIG. 5 is a block diagram showing a circuit system of the optical head shown in FIG.

* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings

4:비임, 21:반도체 레이저 장치, 24:실리콘 기판, 25:PIN다이오드, 27:3각프리즘, 31:레이저 다이오드칩, 43:반도체 레이저 장치, 45:직각 프리즘, 46:반도체 레이저 장치, 47:실리콘 기판, 49:직각프리즘, 51,52:반도체 레이저 장치.4: beam, 21: semiconductor laser device, 24: silicon substrate, 25: PIN diode, 27: triangular prism, 31: laser diode chip, 43: semiconductor laser device, 45: right angle prism, 46: semiconductor laser device, 47 : Silicon substrate, 49: square prism, 51, 52: semiconductor laser device.

Claims (1)

반도체 기판에 형성되어 있는 광검출기와, 이 광검출기상에 고정되어 있는 최소한 1개의 3각 프리즘과, 상기 반도체 기판에 대해서 고정되어 있는 반도체 레이저 칩을 각각 구비하고, 이 반도체 레이저에서 사출되고 상기 3각 프리즘에서 반사되는 비임을 조사 비임으로서 사용함과 동시에, 상기 3각 프리즘으로 입사하여 이3각 프리즘을 투과하는 비임을 상기 광검출기로 검출하도록 구성시킨 것을 특징으로 하는 반도체 레이저 장치.And a photodetector formed on the semiconductor substrate, at least one triangular prism fixed on the photodetector, and a semiconductor laser chip fixed to the semiconductor substrate, each of which is ejected from the semiconductor laser. And using a beam reflected by each prism as an irradiation beam and detecting the beam incident on the triangular prism and passing through the triangular prism with the photodetector. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019860003060A 1985-04-22 1986-04-21 Semicondutor laser apparatus KR940011266B1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP85-86179 1985-04-22
JP60086179A JP2609221B2 (en) 1985-04-22 1985-04-22 Semiconductor laser device
JP86179 1985-04-22

Publications (2)

Publication Number Publication Date
KR860008633A true KR860008633A (en) 1986-11-17
KR940011266B1 KR940011266B1 (en) 1994-12-03

Family

ID=13879534

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019860003060A KR940011266B1 (en) 1985-04-22 1986-04-21 Semicondutor laser apparatus

Country Status (2)

Country Link
JP (1) JP2609221B2 (en)
KR (1) KR940011266B1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2636846B2 (en) * 1987-02-12 1997-07-30 ソニー株式会社 Optical pickup device for magneto-optical disk
JP2629720B2 (en) * 1987-07-30 1997-07-16 ソニー株式会社 Light-emitting / light-receiving composite element
JP2761877B2 (en) * 1987-12-21 1998-06-04 株式会社三共 Ball game machine
JP2551302B2 (en) * 1991-09-18 1996-11-06 日本電気株式会社 Optical recording / reproducing apparatus and manufacturing method thereof

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55150142A (en) * 1979-05-07 1980-11-21 Sony Corp Optical signal reproducing head
JPS56156937A (en) * 1980-04-30 1981-12-03 Matsushita Electric Ind Co Ltd Optical pickup device
FR2502800A1 (en) * 1981-03-24 1982-10-01 Thomson Csf OPTICAL SENSOR FOR FOCUSING
JPS5894142A (en) * 1981-11-30 1983-06-04 Toshiba Corp Optical head
JPS6059547A (en) * 1983-09-12 1985-04-05 Nippon Telegr & Teleph Corp <Ntt> Optical head

Also Published As

Publication number Publication date
JP2609221B2 (en) 1997-05-14
JPS61243964A (en) 1986-10-30
KR940011266B1 (en) 1994-12-03

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