KR860008632A - Semiconductor laser device - Google Patents
Semiconductor laser device Download PDFInfo
- Publication number
- KR860008632A KR860008632A KR1019860003059A KR860003059A KR860008632A KR 860008632 A KR860008632 A KR 860008632A KR 1019860003059 A KR1019860003059 A KR 1019860003059A KR 860003059 A KR860003059 A KR 860003059A KR 860008632 A KR860008632 A KR 860008632A
- Authority
- KR
- South Korea
- Prior art keywords
- semiconductor laser
- thin film
- photodetector
- semiconductor
- laser device
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Optical Head (AREA)
- Semiconductor Lasers (AREA)
Abstract
내용 없음No content
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제1도 내지 제4도는 본 발명의 일실시예를 도시하고 있으며,1 to 4 show one embodiment of the present invention,
제1도는 측단면도.1 is a side cross-sectional view.
제2도는 일실시예를 적용한 광학 헤드의 측면도.2 is a side view of an optical head to which one embodiment is applied.
제4도는 일실시예에 사용되고 있는 전류-전압 변환기의 회로도.4 is a circuit diagram of a current-voltage converter being used in one embodiment.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
4:비임 21:반도체 레이저 장치 24:기판 26:레이저 다이오드칩 32:PIN 다이오드 33:박막.4: beam 21: semiconductor laser device 24: substrate 26: laser diode chip 32: PIN diode 33: thin film.
Claims (1)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP86178 | 1985-04-22 | ||
JP60086178A JPS61243963A (en) | 1985-04-22 | 1985-04-22 | Semiconductor laser device |
Publications (1)
Publication Number | Publication Date |
---|---|
KR860008632A true KR860008632A (en) | 1986-11-17 |
Family
ID=13879505
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019860003059A KR860008632A (en) | 1985-04-22 | 1986-04-21 | Semiconductor laser device |
Country Status (2)
Country | Link |
---|---|
JP (1) | JPS61243963A (en) |
KR (1) | KR860008632A (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04206047A (en) * | 1990-11-30 | 1992-07-28 | Matsushita Electric Ind Co Ltd | Optical head |
EP0664585B1 (en) * | 1993-12-22 | 1998-03-04 | Siemens Aktiengesellschaft | Transmitter and receiver module for bi-directional optical communication |
-
1985
- 1985-04-22 JP JP60086178A patent/JPS61243963A/en active Pending
-
1986
- 1986-04-21 KR KR1019860003059A patent/KR860008632A/en not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
JPS61243963A (en) | 1986-10-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E601 | Decision to refuse application |