JPS641290A - Semiconductor laser device - Google Patents
Semiconductor laser deviceInfo
- Publication number
- JPS641290A JPS641290A JP15706787A JP15706787A JPS641290A JP S641290 A JPS641290 A JP S641290A JP 15706787 A JP15706787 A JP 15706787A JP 15706787 A JP15706787 A JP 15706787A JP S641290 A JPS641290 A JP S641290A
- Authority
- JP
- Japan
- Prior art keywords
- emitted
- far field
- light
- laser beam
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
- H01S5/18388—Lenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/0207—Substrates having a special shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18305—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with emission through the substrate, i.e. bottom emission
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
PURPOSE:To couple the light beam with external optical parts such as optical fiber, etc., with good coupling efficiency without using a condenser lens by providing a film having the Fresnel zone structure for condensing the light on the far field on the surface of mirror from which the laser beam is emitted. CONSTITUTION:When a forward voltage is applied to the upper and lower electrodes, the light emitted from an active layer 1 reaches oscillation after repeating reflection between the mirrors 6 and 9 and the light is emitted as a laser beam 12 to the external side from the end surface after passing through a multilayered dielectric film of the mirror 6. The laser beam emitted here is not the diverging light which is emitted from the prior art but has the minimum beam diameter on the far field because it is condensed effectively on the far field by a refraction ring of the Fresnel zone film 13. Here, since the focus distance can be changed freely depending on the pattern of Fresnel zone film 13, location on the far field of minimum beam and a value of minimum beam (w) can be set freely. Thereby, the laser beam condensed on the far field can be obtained and a condenser lens for improving coupling efficiency with optical fiber is no longer necessary.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15706787A JPS641290A (en) | 1987-06-23 | 1987-06-23 | Semiconductor laser device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15706787A JPS641290A (en) | 1987-06-23 | 1987-06-23 | Semiconductor laser device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH011290A JPH011290A (en) | 1989-01-05 |
JPS641290A true JPS641290A (en) | 1989-01-05 |
Family
ID=15641502
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15706787A Pending JPS641290A (en) | 1987-06-23 | 1987-06-23 | Semiconductor laser device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS641290A (en) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5038356A (en) * | 1989-12-04 | 1991-08-06 | Trw Inc. | Vertical-cavity surface-emitting diode laser |
EP0614256A1 (en) * | 1993-03-01 | 1994-09-07 | AT&T Corp. | Tunable surface emitting semiconductor laser |
EP0614255A1 (en) * | 1993-03-04 | 1994-09-07 | AT&T Corp. | Surface emitting semiconductor laser with integrated focusing means |
WO2005071808A1 (en) * | 2004-01-23 | 2005-08-04 | Nec Corporation | Surface emitting laser |
US7301175B2 (en) | 2001-10-12 | 2007-11-27 | Nichia Corporation | Light emitting apparatus and method of manufacturing the same |
US7378334B2 (en) | 2002-07-08 | 2008-05-27 | Nichia Corporation | Nitride semiconductor device comprising bonded substrate and fabrication method of the same |
EP2101379A1 (en) | 2008-03-14 | 2009-09-16 | Universität Stuttgart | VCSEL with monolithically integrated Fresnel lens |
JP2011243650A (en) * | 2010-05-14 | 2011-12-01 | Furukawa Electric Co Ltd:The | Semiconductor laser element |
-
1987
- 1987-06-23 JP JP15706787A patent/JPS641290A/en active Pending
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5038356A (en) * | 1989-12-04 | 1991-08-06 | Trw Inc. | Vertical-cavity surface-emitting diode laser |
EP0614256A1 (en) * | 1993-03-01 | 1994-09-07 | AT&T Corp. | Tunable surface emitting semiconductor laser |
EP0614255A1 (en) * | 1993-03-04 | 1994-09-07 | AT&T Corp. | Surface emitting semiconductor laser with integrated focusing means |
US7301175B2 (en) | 2001-10-12 | 2007-11-27 | Nichia Corporation | Light emitting apparatus and method of manufacturing the same |
US7390684B2 (en) | 2001-10-12 | 2008-06-24 | Nichia Corporation | Light emitting apparatus and method of manufacturing the same |
US7378334B2 (en) | 2002-07-08 | 2008-05-27 | Nichia Corporation | Nitride semiconductor device comprising bonded substrate and fabrication method of the same |
US8030665B2 (en) | 2002-07-08 | 2011-10-04 | Nichia Corporation | Nitride semiconductor device comprising bonded substrate and fabrication method of the same |
WO2005071808A1 (en) * | 2004-01-23 | 2005-08-04 | Nec Corporation | Surface emitting laser |
EP2101379A1 (en) | 2008-03-14 | 2009-09-16 | Universität Stuttgart | VCSEL with monolithically integrated Fresnel lens |
DE102008014193A1 (en) * | 2008-03-14 | 2009-09-24 | Universität Stuttgart | Vertical resonator laser |
JP2011243650A (en) * | 2010-05-14 | 2011-12-01 | Furukawa Electric Co Ltd:The | Semiconductor laser element |
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