JPS641290A - Semiconductor laser device - Google Patents

Semiconductor laser device

Info

Publication number
JPS641290A
JPS641290A JP15706787A JP15706787A JPS641290A JP S641290 A JPS641290 A JP S641290A JP 15706787 A JP15706787 A JP 15706787A JP 15706787 A JP15706787 A JP 15706787A JP S641290 A JPS641290 A JP S641290A
Authority
JP
Japan
Prior art keywords
emitted
far field
light
laser beam
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15706787A
Other languages
Japanese (ja)
Other versions
JPH011290A (en
Inventor
Koji Yamashita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP15706787A priority Critical patent/JPS641290A/en
Publication of JPH011290A publication Critical patent/JPH011290A/en
Publication of JPS641290A publication Critical patent/JPS641290A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
    • H01S5/18388—Lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0207—Substrates having a special shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18305—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with emission through the substrate, i.e. bottom emission

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To couple the light beam with external optical parts such as optical fiber, etc., with good coupling efficiency without using a condenser lens by providing a film having the Fresnel zone structure for condensing the light on the far field on the surface of mirror from which the laser beam is emitted. CONSTITUTION:When a forward voltage is applied to the upper and lower electrodes, the light emitted from an active layer 1 reaches oscillation after repeating reflection between the mirrors 6 and 9 and the light is emitted as a laser beam 12 to the external side from the end surface after passing through a multilayered dielectric film of the mirror 6. The laser beam emitted here is not the diverging light which is emitted from the prior art but has the minimum beam diameter on the far field because it is condensed effectively on the far field by a refraction ring of the Fresnel zone film 13. Here, since the focus distance can be changed freely depending on the pattern of Fresnel zone film 13, location on the far field of minimum beam and a value of minimum beam (w) can be set freely. Thereby, the laser beam condensed on the far field can be obtained and a condenser lens for improving coupling efficiency with optical fiber is no longer necessary.
JP15706787A 1987-06-23 1987-06-23 Semiconductor laser device Pending JPS641290A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15706787A JPS641290A (en) 1987-06-23 1987-06-23 Semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15706787A JPS641290A (en) 1987-06-23 1987-06-23 Semiconductor laser device

Publications (2)

Publication Number Publication Date
JPH011290A JPH011290A (en) 1989-01-05
JPS641290A true JPS641290A (en) 1989-01-05

Family

ID=15641502

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15706787A Pending JPS641290A (en) 1987-06-23 1987-06-23 Semiconductor laser device

Country Status (1)

Country Link
JP (1) JPS641290A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5038356A (en) * 1989-12-04 1991-08-06 Trw Inc. Vertical-cavity surface-emitting diode laser
EP0614255A1 (en) * 1993-03-04 1994-09-07 AT&T Corp. Surface emitting semiconductor laser with integrated focusing means
EP0614256A1 (en) * 1993-03-01 1994-09-07 AT&T Corp. Tunable surface emitting semiconductor laser
WO2005071808A1 (en) * 2004-01-23 2005-08-04 Nec Corporation Surface emitting laser
US7301175B2 (en) 2001-10-12 2007-11-27 Nichia Corporation Light emitting apparatus and method of manufacturing the same
US7378334B2 (en) 2002-07-08 2008-05-27 Nichia Corporation Nitride semiconductor device comprising bonded substrate and fabrication method of the same
EP2101379A1 (en) 2008-03-14 2009-09-16 Universität Stuttgart VCSEL with monolithically integrated Fresnel lens
JP2011243650A (en) * 2010-05-14 2011-12-01 Furukawa Electric Co Ltd:The Semiconductor laser element

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5038356A (en) * 1989-12-04 1991-08-06 Trw Inc. Vertical-cavity surface-emitting diode laser
EP0614256A1 (en) * 1993-03-01 1994-09-07 AT&T Corp. Tunable surface emitting semiconductor laser
EP0614255A1 (en) * 1993-03-04 1994-09-07 AT&T Corp. Surface emitting semiconductor laser with integrated focusing means
US7301175B2 (en) 2001-10-12 2007-11-27 Nichia Corporation Light emitting apparatus and method of manufacturing the same
US7390684B2 (en) 2001-10-12 2008-06-24 Nichia Corporation Light emitting apparatus and method of manufacturing the same
US7378334B2 (en) 2002-07-08 2008-05-27 Nichia Corporation Nitride semiconductor device comprising bonded substrate and fabrication method of the same
US8030665B2 (en) 2002-07-08 2011-10-04 Nichia Corporation Nitride semiconductor device comprising bonded substrate and fabrication method of the same
WO2005071808A1 (en) * 2004-01-23 2005-08-04 Nec Corporation Surface emitting laser
EP2101379A1 (en) 2008-03-14 2009-09-16 Universität Stuttgart VCSEL with monolithically integrated Fresnel lens
DE102008014193A1 (en) * 2008-03-14 2009-09-24 Universität Stuttgart Vertical resonator laser
JP2011243650A (en) * 2010-05-14 2011-12-01 Furukawa Electric Co Ltd:The Semiconductor laser element

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