JPS6442880A - Semiconductor laser device - Google Patents

Semiconductor laser device

Info

Publication number
JPS6442880A
JPS6442880A JP19942887A JP19942887A JPS6442880A JP S6442880 A JPS6442880 A JP S6442880A JP 19942887 A JP19942887 A JP 19942887A JP 19942887 A JP19942887 A JP 19942887A JP S6442880 A JPS6442880 A JP S6442880A
Authority
JP
Japan
Prior art keywords
lambda
film
laser device
si3n4
al2o3
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP19942887A
Other languages
Japanese (ja)
Other versions
JPH0793472B2 (en
Inventor
Seiji Nanbara
Takao Katayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP19942887A priority Critical patent/JPH0793472B2/en
Publication of JPS6442880A publication Critical patent/JPS6442880A/en
Publication of JPH0793472B2 publication Critical patent/JPH0793472B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To enlarge a front end optical emission by a method wherein the front end of a laser device is covered by a three layer coating of Si3N4 lambda/2 film, Al2O3 lambda/4 film, and SiO2 lambda/4 film. CONSTITUTION:A laser device chip 1 is provided with an Si3N4 lambda/2 film 2, Al2O3 lambda/4 film 4, and SiO2 lambda/4 film 5, and emits a beam 6 at its front end. With the front end of the laser device chip 1 being provided with a three layer coating of the Si3N4 lambda/2 film 2, Al2O3 lambda/4 film 4, and SiO2 lambda/4 film 5, the front end reflectivity is reckoned to decrease by 31-20%, increasing the front end optical output accordingly.
JP19942887A 1987-08-10 1987-08-10 Semiconductor laser device Expired - Lifetime JPH0793472B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19942887A JPH0793472B2 (en) 1987-08-10 1987-08-10 Semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19942887A JPH0793472B2 (en) 1987-08-10 1987-08-10 Semiconductor laser device

Publications (2)

Publication Number Publication Date
JPS6442880A true JPS6442880A (en) 1989-02-15
JPH0793472B2 JPH0793472B2 (en) 1995-10-09

Family

ID=16407650

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19942887A Expired - Lifetime JPH0793472B2 (en) 1987-08-10 1987-08-10 Semiconductor laser device

Country Status (1)

Country Link
JP (1) JPH0793472B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5282219A (en) * 1992-02-27 1994-01-25 Mitsubishi Denki Kabushiki Kaisha Semiconductor laser structure having a non-reflection film
US5960021A (en) * 1995-09-14 1999-09-28 Uniphase Opto Holdings, Inc. Semiconductor diode laser and method of manufacturing same
US7031362B2 (en) 2001-11-01 2006-04-18 The Furukawa Electric Co., Ltd. Semiconductor laser device and semiconductor laser module using the device and method for low reflectivity

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5282219A (en) * 1992-02-27 1994-01-25 Mitsubishi Denki Kabushiki Kaisha Semiconductor laser structure having a non-reflection film
US5960021A (en) * 1995-09-14 1999-09-28 Uniphase Opto Holdings, Inc. Semiconductor diode laser and method of manufacturing same
US7031362B2 (en) 2001-11-01 2006-04-18 The Furukawa Electric Co., Ltd. Semiconductor laser device and semiconductor laser module using the device and method for low reflectivity

Also Published As

Publication number Publication date
JPH0793472B2 (en) 1995-10-09

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