JPS6442880A - Semiconductor laser device - Google Patents
Semiconductor laser deviceInfo
- Publication number
- JPS6442880A JPS6442880A JP19942887A JP19942887A JPS6442880A JP S6442880 A JPS6442880 A JP S6442880A JP 19942887 A JP19942887 A JP 19942887A JP 19942887 A JP19942887 A JP 19942887A JP S6442880 A JPS6442880 A JP S6442880A
- Authority
- JP
- Japan
- Prior art keywords
- lambda
- film
- laser device
- si3n4
- al2o3
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Semiconductor Lasers (AREA)
Abstract
PURPOSE:To enlarge a front end optical emission by a method wherein the front end of a laser device is covered by a three layer coating of Si3N4 lambda/2 film, Al2O3 lambda/4 film, and SiO2 lambda/4 film. CONSTITUTION:A laser device chip 1 is provided with an Si3N4 lambda/2 film 2, Al2O3 lambda/4 film 4, and SiO2 lambda/4 film 5, and emits a beam 6 at its front end. With the front end of the laser device chip 1 being provided with a three layer coating of the Si3N4 lambda/2 film 2, Al2O3 lambda/4 film 4, and SiO2 lambda/4 film 5, the front end reflectivity is reckoned to decrease by 31-20%, increasing the front end optical output accordingly.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19942887A JPH0793472B2 (en) | 1987-08-10 | 1987-08-10 | Semiconductor laser device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19942887A JPH0793472B2 (en) | 1987-08-10 | 1987-08-10 | Semiconductor laser device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6442880A true JPS6442880A (en) | 1989-02-15 |
JPH0793472B2 JPH0793472B2 (en) | 1995-10-09 |
Family
ID=16407650
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP19942887A Expired - Lifetime JPH0793472B2 (en) | 1987-08-10 | 1987-08-10 | Semiconductor laser device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0793472B2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5282219A (en) * | 1992-02-27 | 1994-01-25 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor laser structure having a non-reflection film |
US5960021A (en) * | 1995-09-14 | 1999-09-28 | Uniphase Opto Holdings, Inc. | Semiconductor diode laser and method of manufacturing same |
US7031362B2 (en) | 2001-11-01 | 2006-04-18 | The Furukawa Electric Co., Ltd. | Semiconductor laser device and semiconductor laser module using the device and method for low reflectivity |
-
1987
- 1987-08-10 JP JP19942887A patent/JPH0793472B2/en not_active Expired - Lifetime
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5282219A (en) * | 1992-02-27 | 1994-01-25 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor laser structure having a non-reflection film |
US5960021A (en) * | 1995-09-14 | 1999-09-28 | Uniphase Opto Holdings, Inc. | Semiconductor diode laser and method of manufacturing same |
US7031362B2 (en) | 2001-11-01 | 2006-04-18 | The Furukawa Electric Co., Ltd. | Semiconductor laser device and semiconductor laser module using the device and method for low reflectivity |
Also Published As
Publication number | Publication date |
---|---|
JPH0793472B2 (en) | 1995-10-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5640737A (en) | Damage detector for optical fiber for laser power transmission | |
JPS54142988A (en) | Photo semiconductor device | |
JPS6442880A (en) | Semiconductor laser device | |
JPS53126286A (en) | Semiconductor laser package | |
JPS51139787A (en) | Semiconductor light emitting device | |
WO1987002197A1 (en) | Laser apparatus | |
JPS5669882A (en) | Semiconductor luminous device | |
JPS5524460A (en) | Semiconductor laser system | |
JPS6411390A (en) | Semiconductor laser device | |
JPS6424488A (en) | Semiconductor laser device | |
JPS6453436A (en) | Can-sealing for optical semiconductor element | |
CA1271830C (en) | Opto-electronic device with anti-reflection coating | |
JPS5559785A (en) | Light emitting semiconductor device | |
JPS5390890A (en) | Semiconductor laser device | |
JPS5368090A (en) | Semiconductor laser unit | |
JPS57129037A (en) | Optical transmission device | |
JPS56126820A (en) | Light deflection device | |
JPS55107289A (en) | Semiconductor laser device | |
JPS5785281A (en) | Fixing system for oscillation wavelength of semiconductor laser by diffraction grating | |
JPS55164803A (en) | Coupling method of semiconductor laser and optical fiber | |
JPS5432337A (en) | Identifier of polyhedral jewels | |
SE8203597L (en) | FIBER OPTICAL SENSOR WITH HIGH OPTICAL EFFICIENCY | |
JPS52155991A (en) | Semiconductor light emitting element | |
JPS5776839A (en) | Printing device of photomask | |
JPS5334538A (en) | Photo coupler |