JPS5635484A - Semiconductor laser - Google Patents
Semiconductor laserInfo
- Publication number
- JPS5635484A JPS5635484A JP11058679A JP11058679A JPS5635484A JP S5635484 A JPS5635484 A JP S5635484A JP 11058679 A JP11058679 A JP 11058679A JP 11058679 A JP11058679 A JP 11058679A JP S5635484 A JPS5635484 A JP S5635484A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- light
- type
- periphery
- oscillation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
- H01S5/164—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions comprising semiconductor material with a wider bandgap than the active layer
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
PURPOSE:To obtain a stable basic mode oscillation by forming the one side central part of a light and carrier enclosing layer in streak-like recessed cup shape, burying it in a light guide layer, selectively superimposing an active layer thereon and burying the periphery with an epitaxial layer. CONSTITUTION:An N type Al0.1Ga0.9As light guide layer 13 of a groove 19 part formed on an N type GaAs layer 11 makes contact with an N type Al0.3Ga0.7 As light enclosing layer 12 bent toward the substrate 11 side, a GaAs active layer 14 exists only in a part of a flat projected guide layer, and the periphery is surrounded by a P type Al0.3Ga0.7As layer 15 and an N type A0.3Ga0.7As buried layer 16 of a light and carrier enclosing layer 15 on the periphery thereof. Since the lateral refractive index of the layer 13 becomes larger at the center than the outside, light is enclosed, and a stable basic mode can be oscillated. Inasmuch as the active layer is surrounded by the buried layer 16, most of the injected carrier can be contributed to the oscillation, the oscillation threshold can be reduced, and differentiated quantum efficiency can be increased, and a high power can be obtained.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11058679A JPS5635484A (en) | 1979-08-29 | 1979-08-29 | Semiconductor laser |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11058679A JPS5635484A (en) | 1979-08-29 | 1979-08-29 | Semiconductor laser |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5635484A true JPS5635484A (en) | 1981-04-08 |
JPS621277B2 JPS621277B2 (en) | 1987-01-12 |
Family
ID=14539597
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11058679A Granted JPS5635484A (en) | 1979-08-29 | 1979-08-29 | Semiconductor laser |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5635484A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5871684A (en) * | 1981-10-23 | 1983-04-28 | Fujitsu Ltd | Semiconductor light emitting device |
JPS5873176A (en) * | 1981-10-27 | 1983-05-02 | Agency Of Ind Science & Technol | Semiconductor laser |
JPS6017977A (en) * | 1983-07-11 | 1985-01-29 | Nec Corp | Semiconductor laser diode |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3998234B1 (en) | 2019-07-08 | 2024-05-08 | Sumitomo Metal Mining Co., Ltd. | Positive electrode active material for lithium ion secondary battery and lithium ion secondary battery |
-
1979
- 1979-08-29 JP JP11058679A patent/JPS5635484A/en active Granted
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5871684A (en) * | 1981-10-23 | 1983-04-28 | Fujitsu Ltd | Semiconductor light emitting device |
JPS5873176A (en) * | 1981-10-27 | 1983-05-02 | Agency Of Ind Science & Technol | Semiconductor laser |
JPS6355792B2 (en) * | 1981-10-27 | 1988-11-04 | Kogyo Gijutsuin | |
JPS6017977A (en) * | 1983-07-11 | 1985-01-29 | Nec Corp | Semiconductor laser diode |
Also Published As
Publication number | Publication date |
---|---|
JPS621277B2 (en) | 1987-01-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5635484A (en) | Semiconductor laser | |
JPS568890A (en) | Semiconductor laser and manufacture thereof | |
JPS568889A (en) | Manufacture of semiconductor laser | |
JPS56112782A (en) | Semiconductor laser | |
JPS55140286A (en) | Buried heterogeneous structure semiconductor for use in laser | |
JPS5618484A (en) | Manufacture of semiconductor laser | |
JPS56112783A (en) | Semiconductor laser | |
JPS5591892A (en) | Semiconductor laser light emission device | |
JPS55143092A (en) | Semiconductor laser | |
JPS6482590A (en) | Manufacture of semiconductor device | |
JPS5669885A (en) | Semiconductor laser device | |
JPS6425494A (en) | Semiconductor laser device and manufacture thereof | |
JPS5643794A (en) | Semiconductor laser | |
JPS55153385A (en) | Current squeezing type semiconductor device | |
JPS5721884A (en) | Semiconductor laser | |
JPS5645089A (en) | Semiconductor laser | |
JPS55151386A (en) | Stripe type double hetero junction semiconductor laser | |
JPS6441291A (en) | Semiconductor laser | |
JPS52149485A (en) | Injection type semiconductor laser element | |
JPS55140287A (en) | Semiconductor laser | |
SHIYOUHEI | Semiconductor luminous element | |
SHIGERU et al. | Semiconductor laser device | |
JPS56158495A (en) | Manufacture of semiconductor light emitting device | |
JPS55145385A (en) | Semiconductor light emitting element | |
JPS57157587A (en) | Semiconductor laser device |