JPS55143092A - Semiconductor laser - Google Patents

Semiconductor laser

Info

Publication number
JPS55143092A
JPS55143092A JP5195679A JP5195679A JPS55143092A JP S55143092 A JPS55143092 A JP S55143092A JP 5195679 A JP5195679 A JP 5195679A JP 5195679 A JP5195679 A JP 5195679A JP S55143092 A JPS55143092 A JP S55143092A
Authority
JP
Japan
Prior art keywords
lens
layer
resonator
active layer
circular
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5195679A
Other languages
Japanese (ja)
Inventor
Tomoo Yanase
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP5195679A priority Critical patent/JPS55143092A/en
Publication of JPS55143092A publication Critical patent/JPS55143092A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/005—Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To make a circular laser beam radiation available by a method wherein a lens portion of semiconductor material is provided between mirrors of semiconductor walls serving as a resonator. CONSTITUTION:Zn is selectively diffused in semi-circular form onto a p-Al0.35 Ga0.65As layer 33, a Al0.1Ga0.9As active layer 34, and a n-Al0.35Ga0.65As layer 35. The diffused portion functions as a lens 32 with refractive index being slightly increased. Through operation of the lens 32, an induction-discharge light generated in the active layer 34 with a stripe electrode 31 is made in spot-form on a side-surface 38a of a resonator unlikely to the other side surface 38b. Thus the radiated beam makes a circular form. In addition, the output level degradation is lower than that of the conventional units since the lens is built in this unit.
JP5195679A 1979-04-26 1979-04-26 Semiconductor laser Pending JPS55143092A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5195679A JPS55143092A (en) 1979-04-26 1979-04-26 Semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5195679A JPS55143092A (en) 1979-04-26 1979-04-26 Semiconductor laser

Publications (1)

Publication Number Publication Date
JPS55143092A true JPS55143092A (en) 1980-11-08

Family

ID=12901314

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5195679A Pending JPS55143092A (en) 1979-04-26 1979-04-26 Semiconductor laser

Country Status (1)

Country Link
JP (1) JPS55143092A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5430751A (en) * 1993-02-22 1995-07-04 U.S. Philips Corporation Semiconductor diode laser and method of manufacturing such a diode
JPH0864890A (en) * 1995-08-04 1996-03-08 Hitachi Ltd Drive method for semiconductor laser
US5559819A (en) * 1994-04-19 1996-09-24 Nippondenso Co., Ltd. Semiconductor laser device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5430751A (en) * 1993-02-22 1995-07-04 U.S. Philips Corporation Semiconductor diode laser and method of manufacturing such a diode
US5559819A (en) * 1994-04-19 1996-09-24 Nippondenso Co., Ltd. Semiconductor laser device
JPH0864890A (en) * 1995-08-04 1996-03-08 Hitachi Ltd Drive method for semiconductor laser

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