JPS56112783A - Semiconductor laser - Google Patents

Semiconductor laser

Info

Publication number
JPS56112783A
JPS56112783A JP1452580A JP1452580A JPS56112783A JP S56112783 A JPS56112783 A JP S56112783A JP 1452580 A JP1452580 A JP 1452580A JP 1452580 A JP1452580 A JP 1452580A JP S56112783 A JPS56112783 A JP S56112783A
Authority
JP
Japan
Prior art keywords
layer
type
face
layers
light emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1452580A
Other languages
Japanese (ja)
Inventor
Takao Furuse
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP1452580A priority Critical patent/JPS56112783A/en
Publication of JPS56112783A publication Critical patent/JPS56112783A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H01S5/164—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions comprising semiconductor material with a wider bandgap than the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To obtain a single axis mode oscillation laser having small oscillation threshold current by burying the end face of the active layer in the end face buried type semiconductor laser with a layer having large forbidden band width and incorporating the wavelength selecting function in the light waveguide layer. CONSTITUTION:An N type Al0.3Ga0.7As clad layer 12 and an N type Al0.13Ga0.85As light waveguide layer 13 are formed in stripe shape on an N type GaAs semiconductor substrate 11. A P type GaAs active layer 14 and a P type Al0.3Ga0.7As clad layer 15 are formed in stripe shape on the region isolated from the end face of the light emitting surface on the layer 13. Further, an N type Al0.3Ga0.7As clad layer 17 is formed so as to surround the layers 12, 13, 14, 15 excluding the end face of the light emitting surface of the layer 13. The boundary surface 16 between the layers 13 and 16 is formed unevenly having periodic property with wavelength selecting function.
JP1452580A 1980-02-08 1980-02-08 Semiconductor laser Pending JPS56112783A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1452580A JPS56112783A (en) 1980-02-08 1980-02-08 Semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1452580A JPS56112783A (en) 1980-02-08 1980-02-08 Semiconductor laser

Publications (1)

Publication Number Publication Date
JPS56112783A true JPS56112783A (en) 1981-09-05

Family

ID=11863527

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1452580A Pending JPS56112783A (en) 1980-02-08 1980-02-08 Semiconductor laser

Country Status (1)

Country Link
JP (1) JPS56112783A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3924197A1 (en) * 1988-07-22 1990-04-05 Mitsubishi Electric Corp SEMICONDUCTOR LASER
US5642371A (en) * 1993-03-12 1997-06-24 Kabushiki Kaisha Toshiba Optical transmission apparatus

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3924197A1 (en) * 1988-07-22 1990-04-05 Mitsubishi Electric Corp SEMICONDUCTOR LASER
DE3924197C2 (en) * 1988-07-22 1996-09-26 Mitsubishi Electric Corp Semiconductor laser
US5642371A (en) * 1993-03-12 1997-06-24 Kabushiki Kaisha Toshiba Optical transmission apparatus

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