JPS6484758A - Light-emitting diode - Google Patents

Light-emitting diode

Info

Publication number
JPS6484758A
JPS6484758A JP24452287A JP24452287A JPS6484758A JP S6484758 A JPS6484758 A JP S6484758A JP 24452287 A JP24452287 A JP 24452287A JP 24452287 A JP24452287 A JP 24452287A JP S6484758 A JPS6484758 A JP S6484758A
Authority
JP
Japan
Prior art keywords
light
protruding part
algaas clad
clad layer
thick
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP24452287A
Other languages
Japanese (ja)
Inventor
Kazuhiro Osawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP24452287A priority Critical patent/JPS6484758A/en
Publication of JPS6484758A publication Critical patent/JPS6484758A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape

Abstract

PURPOSE:To enhance the coupling power of a fiber by a method wherein the central part of a light-emitting face is structured to be a circular protruding form or a ring- shaped protruding form and a resin of an appropriate amount is coated on the circular protruding part or the ring-shaped protruding part and on a recessed part surrounded by the ring-shaped protruding part in order to form a lens. CONSTITUTION:An AlGaAs-based doublehetero type surface light-emitting diode where an active layer 4 is sandwiched between AlGaAs clad layers 3, 5 is formed to be a thick-film structure where a GaAs substrate has been removed completely. A band gap of the thick-film AlGaAs clad layer 3 is larger than that of the active layer 4; the GaAs substrate is removed so that light emitted from the active layer 4 cannot be absorbed by the GaAs substrate; the light can be extracted to the outside from the side of the thick-film n-type AlGaAs clad layer 3. A circular protruding part (a) is formed in the central part of a light-emitting face on the surface of the AlGaAs clad layer 3 by using an etching operation; a silicon-based resin of an appropriate amount is coated on the surface of the protruding part (a) in order to form a lens 1. An n-side electrode 2 is formed around the protruding part; a P-side electrode 6 is formed on a whole face of the p-type AlGaAs clad layer 5.
JP24452287A 1987-09-28 1987-09-28 Light-emitting diode Pending JPS6484758A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24452287A JPS6484758A (en) 1987-09-28 1987-09-28 Light-emitting diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24452287A JPS6484758A (en) 1987-09-28 1987-09-28 Light-emitting diode

Publications (1)

Publication Number Publication Date
JPS6484758A true JPS6484758A (en) 1989-03-30

Family

ID=17119937

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24452287A Pending JPS6484758A (en) 1987-09-28 1987-09-28 Light-emitting diode

Country Status (1)

Country Link
JP (1) JPS6484758A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5543830A (en) * 1990-10-12 1996-08-06 Minnesota Mining And Manufacturing Company Apparatus with light emitting element, microlens and gradient index lens characteristics for imaging continuous tone images
US7155090B2 (en) 2003-08-01 2006-12-26 Seiko Epson Corporation Optical device and method for manufacturing the same, optical module, and optical transmission device
US7187702B2 (en) 2002-09-25 2007-03-06 Seiko Epson Corporation Surface-emitting light emitting device, manufacturing method for the same, optical module, and optical transmission apparatus
JP2007234990A (en) * 2006-03-02 2007-09-13 Toyota Central Res & Dev Lab Inc Micro-optical element and manufacturing method thereof

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5543830A (en) * 1990-10-12 1996-08-06 Minnesota Mining And Manufacturing Company Apparatus with light emitting element, microlens and gradient index lens characteristics for imaging continuous tone images
US7187702B2 (en) 2002-09-25 2007-03-06 Seiko Epson Corporation Surface-emitting light emitting device, manufacturing method for the same, optical module, and optical transmission apparatus
US7155090B2 (en) 2003-08-01 2006-12-26 Seiko Epson Corporation Optical device and method for manufacturing the same, optical module, and optical transmission device
US7483603B2 (en) 2003-08-01 2009-01-27 Seiko Epson Corporation Optical device and method for manufacturing the same, optical module, and optical transmission device
JP2007234990A (en) * 2006-03-02 2007-09-13 Toyota Central Res & Dev Lab Inc Micro-optical element and manufacturing method thereof

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