JPS61125092A - Semiconductor light emitting diode - Google Patents

Semiconductor light emitting diode

Info

Publication number
JPS61125092A
JPS61125092A JP24661684A JP24661684A JPS61125092A JP S61125092 A JPS61125092 A JP S61125092A JP 24661684 A JP24661684 A JP 24661684A JP 24661684 A JP24661684 A JP 24661684A JP S61125092 A JPS61125092 A JP S61125092A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
active layer
groove
type semiconductor
light emitting
inner side
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP24661684A
Inventor
Toshio Uji
Original Assignee
Nec Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate

Abstract

PURPOSE:To improve coupling efficiency without impairing light emitting efficiency, by providing a ring shaped groove, whose diameter is less than a specified length and which penetrates an active layer, and using the entire active layer at the inner side of the groove as a light emitting region. CONSTITUTION:On an N type semiconductor substrate 11, an N type semiconductor clad layer 12, an N type semiconductor active layer 13 and P type semiconductor clad layer 14 are sequentially formed, and a double heterogeneous laminated structure is obtained. A ring shaped groove 15 penetrates through the active layer 13 and has an inner diameter less than about 30mum. A P type electrode 16 is formed on the entire surface of the P type clad layer 14 at the inner side of the groove. The entire active layer 13 at the inner side of the groove 15 is made to be a light emitting region. Output light is taken out of a light output window 17, which is provided on the surface of the N type semiconductor substrate 11. A current is injected into the entire active layer 13 and the inner side of the groove 15. Therefore, the entire active layer 13 uniformly emits light, and the coupling efficiency is strikingly improved. Since the inner diameter of the groove 15 is made to be less than about 30mum, the effect is remarkable.
JP24661684A 1984-11-21 1984-11-21 Semiconductor light emitting diode Pending JPS61125092A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24661684A JPS61125092A (en) 1984-11-21 1984-11-21 Semiconductor light emitting diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24661684A JPS61125092A (en) 1984-11-21 1984-11-21 Semiconductor light emitting diode

Publications (1)

Publication Number Publication Date
JPS61125092A true true JPS61125092A (en) 1986-06-12

Family

ID=17151051

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24661684A Pending JPS61125092A (en) 1984-11-21 1984-11-21 Semiconductor light emitting diode

Country Status (1)

Country Link
JP (1) JPS61125092A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01312871A (en) * 1988-06-10 1989-12-18 Omron Tateisi Electron Co Semiconductor light emitting diode for slit-light
US5753940A (en) * 1995-10-16 1998-05-19 Kabushiki Kaisha Toshiba Light-emitting diode having narrow luminescence spectrum
WO2002005358A1 (en) * 2000-07-10 2002-01-17 Osram Opto Semiconductors Gmbh Radiation-emitting semiconductor chip
WO2001080322A3 (en) * 2000-04-19 2002-03-28 Osram Opto Semiconductors Gmbh High-radiance led chip and a method for producing the same
WO2015094600A1 (en) * 2013-12-20 2015-06-25 LuxVue Technology Corporation Light-emitting diode with current injection confinement trench

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59119775A (en) * 1982-12-25 1984-07-11 Fujitsu Ltd Light emitting semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59119775A (en) * 1982-12-25 1984-07-11 Fujitsu Ltd Light emitting semiconductor device

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01312871A (en) * 1988-06-10 1989-12-18 Omron Tateisi Electron Co Semiconductor light emitting diode for slit-light
US5753940A (en) * 1995-10-16 1998-05-19 Kabushiki Kaisha Toshiba Light-emitting diode having narrow luminescence spectrum
WO2001080322A3 (en) * 2000-04-19 2002-03-28 Osram Opto Semiconductors Gmbh High-radiance led chip and a method for producing the same
US7026657B2 (en) 2000-04-19 2006-04-11 Osram Gmbh High radiance led chip and a method for producing same
US7306960B2 (en) 2000-04-19 2007-12-11 Osram Gmbh High radiance LED chip and a method for producing same
WO2002005358A1 (en) * 2000-07-10 2002-01-17 Osram Opto Semiconductors Gmbh Radiation-emitting semiconductor chip
US6946687B2 (en) 2000-07-10 2005-09-20 Osram Gmbh Radiation-emitting semiconductor chip with a radiation-emitting active layer
WO2015094600A1 (en) * 2013-12-20 2015-06-25 LuxVue Technology Corporation Light-emitting diode with current injection confinement trench
US9768345B2 (en) 2013-12-20 2017-09-19 Apple Inc. LED with current injection confinement trench

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