JPS6410690A - Semiconductor laser device and manufacture thereof - Google Patents

Semiconductor laser device and manufacture thereof

Info

Publication number
JPS6410690A
JPS6410690A JP16633687A JP16633687A JPS6410690A JP S6410690 A JPS6410690 A JP S6410690A JP 16633687 A JP16633687 A JP 16633687A JP 16633687 A JP16633687 A JP 16633687A JP S6410690 A JPS6410690 A JP S6410690A
Authority
JP
Japan
Prior art keywords
layer
mesa
type
laser device
semiconductor laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16633687A
Other languages
Japanese (ja)
Inventor
Seiji Kawada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP16633687A priority Critical patent/JPS6410690A/en
Publication of JPS6410690A publication Critical patent/JPS6410690A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32325—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm red laser based on InGaP

Landscapes

  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To provide a transverse mode controlling semiconductor laser device which can be manufacted by using a small number of processes by the MOVPE method, by forming a semiconductor layer of a second conductivity type on a mesa such that the bottom of the layer is wider than the top face of the mesa, and forming a current constriction layer of the first conductivity type on the top and side faces of the semiconductor layer as well as on the surface region of a clad layer other than the mesa such that a thickness of the current t constriction layer is smaller than the height of the mesa. CONSTITUTION:A semiconductor laser device of the invention comprises an N-type Al0.5In0.5P first clad layer 2 formed to a thickness of 1.2mum on an N-type GaAs semiconductor substrate 1 and an undoped Ga0.5In0.5P active layer 3. On the active layer 3, there are provided a P-type Al0.5In0.5P second clad layer 4 which is 1.2mum thick in a mesa region while 0.4mum thick out of the mesa region, a P-type GaAs cap layer 5 formed on the mesa region of the layer 4 such that the bottom thereof is wider than the top of the mesa, an N-type GaAs current constriction and light absorption layer 6 formed on the layer 4 as well as on the top and side faces of the cap layer 5, and a P-type GaAs contact layer 7 formed on the whole surface of the structure.
JP16633687A 1987-07-02 1987-07-02 Semiconductor laser device and manufacture thereof Pending JPS6410690A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16633687A JPS6410690A (en) 1987-07-02 1987-07-02 Semiconductor laser device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16633687A JPS6410690A (en) 1987-07-02 1987-07-02 Semiconductor laser device and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS6410690A true JPS6410690A (en) 1989-01-13

Family

ID=15829476

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16633687A Pending JPS6410690A (en) 1987-07-02 1987-07-02 Semiconductor laser device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS6410690A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5805627A (en) * 1995-02-07 1998-09-08 Fujitsu Limited Laser diode and optical communications system using such laser diode

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5805627A (en) * 1995-02-07 1998-09-08 Fujitsu Limited Laser diode and optical communications system using such laser diode

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