JPS5727096A - Semiconductor laser device - Google Patents

Semiconductor laser device

Info

Publication number
JPS5727096A
JPS5727096A JP10227480A JP10227480A JPS5727096A JP S5727096 A JPS5727096 A JP S5727096A JP 10227480 A JP10227480 A JP 10227480A JP 10227480 A JP10227480 A JP 10227480A JP S5727096 A JPS5727096 A JP S5727096A
Authority
JP
Japan
Prior art keywords
layer
type
light
layered
semiconductor laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10227480A
Other languages
Japanese (ja)
Inventor
Naoto Mogi
Haruki Kurihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP10227480A priority Critical patent/JPS5727096A/en
Publication of JPS5727096A publication Critical patent/JPS5727096A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To obtain high power oscillating light by providing a structure wherein an active layer is enclosed by a crystal layer which is transparent to a laser oscillated light, with respect to the progressing direction of the light from a resonator and at a cross section in the direction which crosses said progressing direction at a right angle. CONSTITUTION:On an N type GaAs substrate 11, are layered are a tape shaped N type Ga0.7Al0.3As layer 12, and N type Ga0.9Al0.1As layer 13, a P type Ga0.9 Al0.1 As layer 14, a P type Ga0.7Al0.3As layer 15. A P type GaAs layer 16 which becomes an active layer is embeded between the N type Ga0.9Al0.1As layer 13 which is core layer of a light waveguide and the P type Ga0.9Al0.1As layer 14. On both sides of the tape shaped layered film, are provided N type Ga0.7Al0.3As layer 17a and 17b. Said layers 17a and 17b, and the P type Ga0.7Al0.3As layer 15 and the N type Ga0.7Al0.3As layer 12, both of which are located at the upper and lower part of the core layer, constitute a clad layer for the light waveguide. A P type GaAs layer is layered on the P type Ga0.7Al0.3As layer 15, and a zinc diffused layer 19 is formed.
JP10227480A 1980-07-25 1980-07-25 Semiconductor laser device Pending JPS5727096A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10227480A JPS5727096A (en) 1980-07-25 1980-07-25 Semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10227480A JPS5727096A (en) 1980-07-25 1980-07-25 Semiconductor laser device

Publications (1)

Publication Number Publication Date
JPS5727096A true JPS5727096A (en) 1982-02-13

Family

ID=14323016

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10227480A Pending JPS5727096A (en) 1980-07-25 1980-07-25 Semiconductor laser device

Country Status (1)

Country Link
JP (1) JPS5727096A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62221177A (en) * 1986-03-24 1987-09-29 Fujikura Ltd Distributed reflection semiconductor laser

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62221177A (en) * 1986-03-24 1987-09-29 Fujikura Ltd Distributed reflection semiconductor laser

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