JPS56142690A - Semiconductor laser and manufacture thereof - Google Patents

Semiconductor laser and manufacture thereof

Info

Publication number
JPS56142690A
JPS56142690A JP4570180A JP4570180A JPS56142690A JP S56142690 A JPS56142690 A JP S56142690A JP 4570180 A JP4570180 A JP 4570180A JP 4570180 A JP4570180 A JP 4570180A JP S56142690 A JPS56142690 A JP S56142690A
Authority
JP
Japan
Prior art keywords
light
oscillation
laser
electrodes
semiconductor laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4570180A
Other languages
Japanese (ja)
Inventor
Ikuo Mito
Shigeo Matsushita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP4570180A priority Critical patent/JPS56142690A/en
Publication of JPS56142690A publication Critical patent/JPS56142690A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2237—Buried stripe structure with a non-planar active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/24—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser

Landscapes

  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To increase the efficienty and power of a semiconductor laser and control the oscillation mode of the laser by enclosing carrier and light in both elevational and lateral directions. CONSTITUTION:Since an active layer 24 is surrounded by clad layers 25, 26 having small refractive index and an InP layer 27, it is constructed that the light is enclosed in directions parallel to and rectangular to the surfaces of the electrodes 29, 30. When an electric current is injected via the electrodes 29, 30, it concentrically flows only through the region where a recess 23 is disposed, and laser oscillation occurs. Since the structure for enclosing the light is formed at the active layer 24 as a center, the variation in the oscillation mode is suppressed by injecting the large current and accordingly by increasing the power of the laser oscillation to efficiently obtain the stable oscillation light.
JP4570180A 1980-04-09 1980-04-09 Semiconductor laser and manufacture thereof Pending JPS56142690A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4570180A JPS56142690A (en) 1980-04-09 1980-04-09 Semiconductor laser and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4570180A JPS56142690A (en) 1980-04-09 1980-04-09 Semiconductor laser and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS56142690A true JPS56142690A (en) 1981-11-07

Family

ID=12726670

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4570180A Pending JPS56142690A (en) 1980-04-09 1980-04-09 Semiconductor laser and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS56142690A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4929571A (en) * 1987-02-27 1990-05-29 Mitsubishi Denki Kabushiki Kaisha Method of making a buried crescent laser with air gap insulator
US5242856A (en) * 1989-10-11 1993-09-07 Kabushiki Kaisha Toshiba Method of manufacturing a window structure semiconductor laser

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4929571A (en) * 1987-02-27 1990-05-29 Mitsubishi Denki Kabushiki Kaisha Method of making a buried crescent laser with air gap insulator
US5242856A (en) * 1989-10-11 1993-09-07 Kabushiki Kaisha Toshiba Method of manufacturing a window structure semiconductor laser

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