JPS6410687A - Semiconductor laser device - Google Patents

Semiconductor laser device

Info

Publication number
JPS6410687A
JPS6410687A JP16604187A JP16604187A JPS6410687A JP S6410687 A JPS6410687 A JP S6410687A JP 16604187 A JP16604187 A JP 16604187A JP 16604187 A JP16604187 A JP 16604187A JP S6410687 A JPS6410687 A JP S6410687A
Authority
JP
Japan
Prior art keywords
layer
top face
projection
active layer
type inp
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16604187A
Other languages
Japanese (ja)
Inventor
Yoshimitsu Yamazoe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Science and Technology Agency
Sumitomo Electric Industries Ltd
Original Assignee
Research Development Corp of Japan
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Research Development Corp of Japan, Sumitomo Electric Industries Ltd filed Critical Research Development Corp of Japan
Priority to JP16604187A priority Critical patent/JPS6410687A/en
Publication of JPS6410687A publication Critical patent/JPS6410687A/en
Pending legal-status Critical Current

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  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To decrease oscillation threshold current of a semiconductor laser device in which optical waveguide layer is formed monolithically with respect to an active layer, by constituting at least a part of the total length of an optical waveguide by a core layer having a large refractive index and a high purity or semi-insulating semiconductor clad layer surrounding all around the core layer. CONSTITUTION:An N-type InP buffer layer 2 is formed on an N-type InP sub strate 1 and is provided with a linear projection at the center thereof. On the top face of this projection, there are formed an optical wave guide layer 12 of InGaAsP and an active layer 3 in series. Further, a semi-insulating or high purity InP clad layer 13 is formed on grooves defined on the opposite sides of the projection as well as over the top face of the optical wave guide layer 12. A P-type InP clad layer 8 having a relatively low concentration is formed on the active layer, and a contact layer 9 is provided such that it directly corresponds to the active layer 3 on the top face of the InP clad layer 8.
JP16604187A 1987-07-02 1987-07-02 Semiconductor laser device Pending JPS6410687A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16604187A JPS6410687A (en) 1987-07-02 1987-07-02 Semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16604187A JPS6410687A (en) 1987-07-02 1987-07-02 Semiconductor laser device

Publications (1)

Publication Number Publication Date
JPS6410687A true JPS6410687A (en) 1989-01-13

Family

ID=15823855

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16604187A Pending JPS6410687A (en) 1987-07-02 1987-07-02 Semiconductor laser device

Country Status (1)

Country Link
JP (1) JPS6410687A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0380589A (en) * 1989-08-23 1991-04-05 Nec Corp Semiconductor laser element and manufacture thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0380589A (en) * 1989-08-23 1991-04-05 Nec Corp Semiconductor laser element and manufacture thereof

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