JPS6410687A - Semiconductor laser device - Google Patents
Semiconductor laser deviceInfo
- Publication number
- JPS6410687A JPS6410687A JP16604187A JP16604187A JPS6410687A JP S6410687 A JPS6410687 A JP S6410687A JP 16604187 A JP16604187 A JP 16604187A JP 16604187 A JP16604187 A JP 16604187A JP S6410687 A JPS6410687 A JP S6410687A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- top face
- projection
- active layer
- type inp
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Semiconductor Lasers (AREA)
Abstract
PURPOSE:To decrease oscillation threshold current of a semiconductor laser device in which optical waveguide layer is formed monolithically with respect to an active layer, by constituting at least a part of the total length of an optical waveguide by a core layer having a large refractive index and a high purity or semi-insulating semiconductor clad layer surrounding all around the core layer. CONSTITUTION:An N-type InP buffer layer 2 is formed on an N-type InP sub strate 1 and is provided with a linear projection at the center thereof. On the top face of this projection, there are formed an optical wave guide layer 12 of InGaAsP and an active layer 3 in series. Further, a semi-insulating or high purity InP clad layer 13 is formed on grooves defined on the opposite sides of the projection as well as over the top face of the optical wave guide layer 12. A P-type InP clad layer 8 having a relatively low concentration is formed on the active layer, and a contact layer 9 is provided such that it directly corresponds to the active layer 3 on the top face of the InP clad layer 8.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16604187A JPS6410687A (en) | 1987-07-02 | 1987-07-02 | Semiconductor laser device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16604187A JPS6410687A (en) | 1987-07-02 | 1987-07-02 | Semiconductor laser device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6410687A true JPS6410687A (en) | 1989-01-13 |
Family
ID=15823855
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16604187A Pending JPS6410687A (en) | 1987-07-02 | 1987-07-02 | Semiconductor laser device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6410687A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0380589A (en) * | 1989-08-23 | 1991-04-05 | Nec Corp | Semiconductor laser element and manufacture thereof |
-
1987
- 1987-07-02 JP JP16604187A patent/JPS6410687A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0380589A (en) * | 1989-08-23 | 1991-04-05 | Nec Corp | Semiconductor laser element and manufacture thereof |
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