JPS6457784A - Semiconductor laser device - Google Patents

Semiconductor laser device

Info

Publication number
JPS6457784A
JPS6457784A JP21557487A JP21557487A JPS6457784A JP S6457784 A JPS6457784 A JP S6457784A JP 21557487 A JP21557487 A JP 21557487A JP 21557487 A JP21557487 A JP 21557487A JP S6457784 A JPS6457784 A JP S6457784A
Authority
JP
Japan
Prior art keywords
layer
refractive index
current block
clad
optical guide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP21557487A
Other languages
Japanese (ja)
Inventor
Yutaka Nagai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP21557487A priority Critical patent/JPS6457784A/en
Publication of JPS6457784A publication Critical patent/JPS6457784A/en
Pending legal-status Critical Current

Links

Landscapes

  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To obtain an optical guide layer having higher refractive index than that of a second clad layer and to enhance its output by forming a stripelike groove for specifying an optical guide region narrower than the opening width of the stripelike groove formed on a current block layer on the second clad layer of the side not provided with a current block layer. CONSTITUTION:A current block layer 12 is formed on a substrate 11, and a stripelike groove 20 exposed with the substrate 11 is formed in the bottom. Then, a first clad layer 13, an active layer 14, a second clad layer 15, a stripelike groove 21 formed on the second clad layer 15, an optical guide layer 16, and a contact layer 17 are formed. A laser light generated in the layer 14 is enclosed in a region which approaches a region having an effectively large refractive index, i.e., the layer 16. The effective refractive index distribution added with the layer 16 becomes a refractive index which exhibits a double protrusion shape.
JP21557487A 1987-08-28 1987-08-28 Semiconductor laser device Pending JPS6457784A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21557487A JPS6457784A (en) 1987-08-28 1987-08-28 Semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21557487A JPS6457784A (en) 1987-08-28 1987-08-28 Semiconductor laser device

Publications (1)

Publication Number Publication Date
JPS6457784A true JPS6457784A (en) 1989-03-06

Family

ID=16674688

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21557487A Pending JPS6457784A (en) 1987-08-28 1987-08-28 Semiconductor laser device

Country Status (1)

Country Link
JP (1) JPS6457784A (en)

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