JPS6442884A - Semiconductor laser element - Google Patents
Semiconductor laser elementInfo
- Publication number
- JPS6442884A JPS6442884A JP20016487A JP20016487A JPS6442884A JP S6442884 A JPS6442884 A JP S6442884A JP 20016487 A JP20016487 A JP 20016487A JP 20016487 A JP20016487 A JP 20016487A JP S6442884 A JPS6442884 A JP S6442884A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- mesa
- active layer
- buried
- window
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
- H01S5/164—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions comprising semiconductor material with a wider bandgap than the active layer
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
PURPOSE:To enable a lateral mode oscillation to be stable and obtain laser rays high in an output power by a method wherein a stripe-like mesa section containing an active layer specified in width is formed in a multilayered film built on a substrate, the whole side face of the mesa section is surrounded with a high resistant layer which is larger in a forbidden bandwidth of a energy level but smaller in the refractive index than the active layer, and a clad layer is deposited. CONSTITUTION:A mesa is formed through shallow etching of a region which contains an active layer 3 specified in width, where a material larger in an energy band gap but smaller in the refractive index than the active layer 3 is buried in the whole side face of the mesa, a buried layer 6a and a window layer 9a are simultaneously formed, and further the buried layer 6a and the window layer 9a are disposed in such a structure that they are sandwiched between a first clad layer 2 and a second clad layer 4. By these processes, both the active layer 3 and the window layer 9a accurate in a broadwise dimension can be obtained through a shallow mesa etching, so that the current is made to be constricted sufficiently enough so as to make laser rays stable in a lateral mode oscillation, high in an output, and excellent in property.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20016487A JPS6442884A (en) | 1987-08-11 | 1987-08-11 | Semiconductor laser element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20016487A JPS6442884A (en) | 1987-08-11 | 1987-08-11 | Semiconductor laser element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6442884A true JPS6442884A (en) | 1989-02-15 |
Family
ID=16419855
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20016487A Pending JPS6442884A (en) | 1987-08-11 | 1987-08-11 | Semiconductor laser element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6442884A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6385225B1 (en) | 1999-05-11 | 2002-05-07 | Nec Corporation | Window type semiconductor laser light emitting device and a process of fabricating thereof |
-
1987
- 1987-08-11 JP JP20016487A patent/JPS6442884A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6385225B1 (en) | 1999-05-11 | 2002-05-07 | Nec Corporation | Window type semiconductor laser light emitting device and a process of fabricating thereof |
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