JPS6457692A - Semiconductor laser - Google Patents

Semiconductor laser

Info

Publication number
JPS6457692A
JPS6457692A JP21392787A JP21392787A JPS6457692A JP S6457692 A JPS6457692 A JP S6457692A JP 21392787 A JP21392787 A JP 21392787A JP 21392787 A JP21392787 A JP 21392787A JP S6457692 A JPS6457692 A JP S6457692A
Authority
JP
Japan
Prior art keywords
layer
layers
semiconductor
semiconductor laser
laminating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP21392787A
Other languages
Japanese (ja)
Other versions
JP2525618B2 (en
Inventor
Hideaki Iwano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP21392787A priority Critical patent/JP2525618B2/en
Publication of JPS6457692A publication Critical patent/JPS6457692A/en
Application granted granted Critical
Publication of JP2525618B2 publication Critical patent/JP2525618B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2211—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on II-VI materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm

Landscapes

  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To obtain a semiconductor laser wherein the leakage of a current to regions other than an oscillation region is completely interrupted and moreover, an oscillation in a fundamental transverse mode can be controlled by using an effective optical confinement effect, and which has a low Ith, a long life and a high reliability, by a method wherein a layer obtained by laminating II-VI compound semiconductor layers, whose compositions are different from each other, a plurality of times alternately in order is provided in II-VI compound layers. CONSTITUTION:A rib, which is removed by etching to the depth in the middle of a clad layer 106 just over an active layer 105, of a double hetero junction semiconductor laser, which is constituted of the layer 105 consisting of a III-V compound semiconductor, a clad layer 104 and the clad layer 106, is formed and both ends of the rib are filled with a semiconductor layer 109 consisting of II-VI compound semiconductor layers and a semiconductor layer 110. In the semiconductor laser, the layer 109 obtainable by laminating II-VI compound semiconductor layers 107 and 108, whose compositions are different from each other, alternately in order a plurality of times is contained at least in a part of layer plane of the above layers 109 and 110. For example, both ends of the above rib are filled with the superlattice thin film 109, which is formed by laminating alternately the ZnSxSe1-x layers 107 of a thickness of 50Angstrom and the ZnSySE1-y layers 108 of a thickness of 50Angstrom at 50 periods, and the ZnSe layer 110.
JP21392787A 1987-08-27 1987-08-27 Semiconductor laser Expired - Lifetime JP2525618B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21392787A JP2525618B2 (en) 1987-08-27 1987-08-27 Semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21392787A JP2525618B2 (en) 1987-08-27 1987-08-27 Semiconductor laser

Publications (2)

Publication Number Publication Date
JPS6457692A true JPS6457692A (en) 1989-03-03
JP2525618B2 JP2525618B2 (en) 1996-08-21

Family

ID=16647348

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21392787A Expired - Lifetime JP2525618B2 (en) 1987-08-27 1987-08-27 Semiconductor laser

Country Status (1)

Country Link
JP (1) JP2525618B2 (en)

Also Published As

Publication number Publication date
JP2525618B2 (en) 1996-08-21

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